102N02 Search Results

102N02 Datasheets (1)

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Directed Energy

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
102N02		Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF	35.87KB	1

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TDK Corporation


TDK Corporation B82722A2102N020 Common Mode Chokes / Filters RING CORE CHOKE 2x15mH 1A +60 C
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Mouser Electronics	B82722A2102N020					1 - 10 - 100 - 1000 $1.70 10000 $1.57	Get Quote
TDK Corporation B82722J2102N020 Common Mode Chokes / Filters RING CORE CHOKE 2x15mH 1A +60 C
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Mouser Electronics	B82722J2102N020					1 - 10 - 100 - 1000 $1.72 10000 $1.61	Get Quote
TDK Corporation B82724J2102N021 Common Mode Chokes / Filters RING CORE CHOKE 2X39MH 1A
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Mouser Electronics	B82724J2102N021					1 - 10 - 100 - 1000 $2.31 10000 $2.16	Get Quote
TDK Corporation B82724A2102N021 Common Mode Chokes / Filters RING CORE CHOKE 2x39mH 1A +60 C
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Mouser Electronics	B82724A2102N021					1 - 10 - 100 - 1000 $2.43 10000 $2.28	Get Quote
TDK Corporation B82725J2102N020 Common Mode Chokes / Filters RING CORE CHOKE 2x68mH 1A +60 C
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Mouser Electronics	B82725J2102N020					1 - 10 - 100 - 1000 $4.58 10000 $4.29	Get Quote

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102N02 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	de150-102n02a 500pf	PDF
200W MOSFET POWER AMP Abstract: nec 2401 DE150-102N02A 150P rf power mosfet 0/DE150-102N02A Contextual Info: DE150-102N02A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	de150-102n02a 500pf 200w mosfet power amp nec 2401 +3150p rf power mosfet 0/de150-102n02a	PDF
nec 2401 Abstract: DE150-102N02A QGS 80W 30 ohm 150P Directed Energy spice Contextual Info: Directed Energy, Inc. An DE150-102N02A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	de150-102n02a 500pf nec 2401 qgs 80w 30 ohm +3150p directed energy spice	PDF
102N02 Abstract: DE-150 Contextual Info: PRELIMINARY SPECIFICATIONS DE-150 102N02 1.4A, 1000V, 11Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	de-150 102n02 150oc	PDF
high power rf 10kW Abstract: HF power amplifier 1000W DE-275 RF Amplifiers 101N09 hf amplifier 1000w DE-150 3RH1140-1AD00 101N30 102N02 Contextual Info: T H E P U L S E O F T H E F U T U R E DE-SERIES FAST POWER MOSFETS DE-150 SERIES The DE-150 Series are the lowest power devices in the DE-Series family. However, their speed and frequency are the highest. The upper operational frequency of the DE-150 Series is approximately 110MHz. The switching speed of the device family is on the order	Original	de-150 110mhz de-375x2 102n20 +10501n40 high power rf 10kw hf power amplifier 1000w de-275 rf amplifiers 101n09 hf amplifier 1000w 3rh1140-1ad00 101n30 102n02	PDF