DIODES MARKING K7 Search Results

Contextual Info: BAS70/ -04/ -05/ -06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection

2N7002E

Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 3Ω @ VGS = 10V 300mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

2N7002K-7

Abstract: 2N7002KQ-7 2N7002K1
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

MARKING C7K

Abstract: 2N7002KQ-13 2N7002K-7
Contextual Info: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"

2N7002Q

Abstract: equivalent of 2N7002 2N7002-13-F
Contextual Info: 2N7002 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 7.5Ω @ VGS = 5V 210mA • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

10KHZ

Abstract: BAS70W BAS70W-04 BAS70W-05 BAS70W-06 k75 06 49 K743 K73 SC-70
Contextual Info: BAS70W/BAS70W-04 BAS70W-05/BAS70W-06 Surface Mount Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 70m AMPERES 70 VOLTS P b Lead Pb -Free Features: * Extremely Fast Switching Speed * Low Forward Voltage * Very Small Conduction Losses * Schottky Barrier Diodes Encapsulated in a SOT-323 Package

Contextual Info: BAS70W/-04W/-05W/-06W VOLTAGE 70 V, 70 mA Surface Mount Schottky Barrier Diodes Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z z z SOT-323 Low Turn-on voltage Low Forward Voltage - 0.75V Max @ IF = 10 mA

k72 transistor

Abstract: transistor k72 transistor marking k72 k72 transistor surface mount k72 diode k72 marking code k72 marking transistor k72 transistor sot 23 2N7002W 2N7002W-7
Contextual Info: SPICE MODELS: 2N7002W 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package

SOT-23 marking 2a

Abstract: 2N7002E 2N7002E-7 2N7002E-7-F J-STD-020A
Contextual Info: 2N7002E N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: 2N7002E NEW PRODUCT Features • · · · · · Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version

SOT-23 marking l31

Abstract: wA SOT23 SWITCHING F9 SOT23 marking va transistors C5 MARKING TRANSISTOR transistor dg sot-23 U/25/20/TN26/15/850/F9 SOT23 BCW29 BCW30 BFQ31
Contextual Info: FERRANTI * semiconductors FMMT2369 NPN Silicon Planar High Speed Switching Transistor DESCRIPTION This device is intended specificelly fo r use in high speed, lo w current switching epplications. Encapsulated in th e popular SOT-213 package these devices are designed specifically fo r use in thin and thick film

Contextual Info: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020

ferranti

Abstract: FMMT-A20 FMMT2222A BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT-A20 NPN S ilico n Planar Small Signal Transistor D E S C R IP T IO N These devices ere intended for sm all and m edium signal am plification applications from d.c. to radio frequencies. Encapsulated in the popular S O T -23 package these devices

transistor marking code 7E SOT-23

Abstract: transistor with marking BH BCV72 BFQ31 BFQ31A FMMT5087 FMMT5087R NPN transistors sot-23 26 ferranti CB SOT-23
Contextual Info: I t FERRANTI IlsemiconductorsL FMMT5087 PNP S ilicon Planar Small Signal T ra n s is to r D ES C R IPTIO N T h is d e v ic e is a p p lic a tio n s . in te n d e d fo r lo w le v e l, g e n e ra l p u rp o s e E n ca p s u la te d in th e p o p u la r SOT-123 p a c k a g e th e d e v ic e is

transistor k79

Abstract: BAT1000 BAT1000-7 J-STD-020A
Contextual Info: BAT1000 1A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT SPICE MODEL: BAT1000 Features • · · Very Low Forward Voltage Drop High Conductance For Use in DC-DC Converter, PCMCIA, and Mobile Telecommunications Applications SOT-23 A B Mechanical Data

marking code AD

Abstract: transistor EH sot-23 ZD 103 ma BCV72 BCW29 BCW30 BCW31 BFQ31 BFQ31A BFS20
Contextual Info: FERRANTI semiconductors FMMT2369A NPN Silicon Planar High Speed S w itching Transistor DESCRIPTION This device is intended specifically for use in high speed, low current switching applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

marking of m7 diodes

Abstract: BSS63 A12 marking BSS64R C5 MARKING TRANSISTOR device marking code S4 diode marking 2T Diode marking m7 transistor marking code SOT-23 2F Marking H2
Contextual Info: FERRANTI 4 semiconductors BSS64 ! NPN S ilico n Planar H igh V o lta g e T ra n s is to DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the BSS63.

sot 23 marking code 2t

Abstract: marking DG sot-23 NPN transistor sot-23 MARKING CODE G1 MARKING NT SOT23 sot-23 l6 marking of m7 diodes sot-23 marking LC transistor ad 1v m6 marking transistor sot-23 C5 MARKING TRANSISTOR
Contextual Info: FERRANTI semiconductors HT2 NPN Silicon Planar High Voltage Transistor DESCRIPTION This plastic encapsulated transistor is designed for any application requiring high voltage capability at relatively low collector currents. Complementary to the HT3 Encapsulated in the popular SOT-23 package the device is

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

transistor marking code 7E SOT-23

Abstract: transistor dg sot-23 marking 1p transistor sot23 D6 TRANSISTOR MARKING m6 marking transistor sot-23 sot-23 MARKING CODE G1 TRANSISTOR 1P SOT23 transistor sot-23 Marking AR transistor G1 SOT-23 transistor cg sot-23
Contextual Info: FERRANTI semiconductors BSS63 PNP S ilico n Planar High V o lta g e T ra n s is to r D ES C R IPTIO N & This plastic encapsulated transistor is designed fo r any application requiring high vo lta g e capability a t relatively low collector currents. C o m p lem en tary to th e BSS64.

F MARKING 6PIN

Abstract: k937
Contextual Info: S A ftm 5/6-Pin CPs FC Series The Sanyo 5/6-pin chip packs are small-sized packages that facilitate higher-density mounting. We have various Packings that meet automatic mounting requirements. ale FETs for LF Amp General-purpose Amp, Differential Amp Applications

sot-23 MARKING CODE G1

Abstract: code marking 2M sot-23 sot23 marking m8 marking code T4 SOT-23 sot 23 marking code 2t A56 sot ferranti marking code FA sot23 FMMT-A56 amplifier A55 marking
Contextual Info: i FERRANTI FMMT-A55 FMMT-A56 T IIsemiconductorsL PNP Sili con Planar M e d i u m P o w e r Transistors D E S C R IP T IO N M e d iu m pow er transisto rs designed fo r sm all and am plification from d.c. to radio frequencies, in tio n s such as A u d io Frequency Am plifiers,

MMSZ5231-V

Abstract: MMSZ5251-V zener Marking K7 MMSZ5226-V SOD-123 marking code H7 m7 sod123 MMSZ5243-V D8 marking, SOD123 marking code m7 f6 MMSZ5254-V
Contextual Info: MMSZ5225-V-G to MMSZ5267-V-G www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Standard Zener voltage tolerance is ± 5 % with a “B” suffix e.g.: MMSZ5225B-V-G , suffix “C” is ± 2 % tolerance

BZD17C

Contextual Info: BZD17C SERIES TAIWAN SEMICONDUCTOR s 0.8 Watts Voltage Regulator Diodes RoHS Sub SMA COMPLIANCE I* Features •b S ilic o n z e n e r d io d e s L o w p ra fi Ic s u rfa c e -rn o u n t p a c k a g ❖ Z e n e r a n d s u rg e c u r re n t s p e c ific a tio n

diode varicap BB 112

Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Contextual Info: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。