Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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msc1621t1msc2404msd1819amv1620+10mv1624mv1636mv1640mv1642mv1644mv2103diode motorola 711 2n2905apin configuration transistor bc547 2n2222bc2372n555
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MAD130P
Abstract: 2N1711 solid state BC237 MARKING CODE diode sod123 t3 H3T-B MPS4258 bf244 MSA1022 Bf391 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Diode Array MMAD1108 Surface Mount Isolated 8–Diode Array This diode array is a multiple diode junction fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching
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mmad1108de218amsc1621t1msc2404+16msd1819amv1620mv1624mv1636mv1640mv1642mad130p2n1711 solid statebc237marking code diode sod123 t3h3t-bmps4258bf244msa1022bf391bcy72
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2N643
Abstract: BC237 MARKING DP SOT-363 DO204AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+9msc1621t1msc2404msd1819amv1620mv16242n643bc237marking dp sot-363do204aa
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BC237
Abstract: MMBD2005T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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marking dp sot363
Abstract: BC237 transistor BF245 A marking A5 sot363 2N2222A plastic bc849 MMBD1010LT1 bf245 equivalent marking code a5 sot363
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1010lt1mmbd2010t1mmbd3010t1s218a+13msc1621t1msc2404msd1819amv1620mv1624marking dp sot363bc237transistor bf245 amarking a5 sot3632n2222a plasticbc849bf245 equivalentmarking code a5 sot363
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2N301
Abstract: BC237 5111 sot-23 BC547 sot package sot-23 2N5670 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair
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mmbd1005lt1mmbd2005t1mmbd3005t1msc1621t1+10msc2404msd1819amv1620mv1624mv16362n301bc2375111 sot-23bc547 sot package sot-232n5670 equivalent
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BC237
Abstract: sot23 transistor marking JY
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV199LT1 This switching diode has the following features: • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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bav199lt1bav199lt3inch/10236ab+7s218amsc1621t1msc2404msd1819amv1620bc237sot23 transistor marking jy
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BC237
Abstract: 2N2904 bf245b equivalent SOT23 Marking JX
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAV170LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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bav170lt1bav170lt3inch/10236ab+9t218amsc1621t1msc2404msd1819amv1620bc2372n2904bf245b equivalentsot23 marking jx
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BC237
Abstract: TRANSISTOR bc177b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode This switching diode has the following features: BAW156LT1 • Low Leakage Current Applications Motorola Preferred Device • Medium Speed Switching Times • Available in 8 mm Tape and Reel
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baw156lt1baw156lt3inch/10236ab+7junc218amsc1621t1msc2404msd1819amv1620bc237transistor bc177b
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BC237
Abstract: marking code N9 8-pin
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode DAN222 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90
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416/scdan222msc1621t1msc2404+6msd1819amv1620mv1624mv1636bc237marking code n9 8-pin
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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ot-223mv7005t1msc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640bc2372n2222a sot2235161 common anode
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BC237
Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package
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m1ma141/2wkt1inch/3000m1ma141/2wkt3inch/10+8m1ma141wkt1m1ma142wkt170/sotm1218amsc1621t1bc237dual general purpose transistors marking code d3sot23 component marking code mt
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MV104 "direct replacement"
Abstract: 2N3819 Application Note BF245 application note K 2056 transistor MV104 equivalent BC237 BSS89 APPLICATION
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MV104 This device is designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning.
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mv104226aacurren218amsc1621t1+12msc2404msd1819amv1620mv1624mv1636mv104 "direct replacement2n3819 application notebf245 application notek 2056 transistormv104 equivalentbc237bss89 application
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode Common Cathode BAV70LT1 Motorola Preferred Device ANODE 1 3 CATHODE 2 ANODE 3 1 MAXIMUM RATINGS EACH DIODE Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge)
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bav70lt1236abuni218amsc1621t1+7msc2404msd1819amv1620mv1624mv1636mv1640bc237
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diode l 0607
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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m1ma141/2kt1inch/3000m1ma141/2kt3inch/10+6m1ma141kt1m1ma142kt170/sotmsc1621t1diode l 0607bc237
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BC237
Abstract: 16 pin dip with heat sink
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which
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m1ma141/2wat1inch/3000m1ma141/2wat3inch/10+7m1ma141wat1m1ma142wat170/sotm1ma142wat218amsc1621t1bc23716 pin dip with heat sink
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BC237
Abstract: bc547 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Switching Diode MMBD7000LT1 Motorola Preferred Device 1 ANODE 3 CATHODE/ANODE 2 CATHODE 3 1 2 MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge)
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mmbd7000lt1236abmsc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640mv1642bc237bc547 equivalent
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MR2835SK
Contextual Info: MR2835SK Overvoltage Transient Suppressor …designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
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MR2835S
Abstract: MR2835S equivalent MR2835SK load dump pulse load dump test
Contextual Info: MR2835S, MR2835SK Overvoltage Transient Suppressor …designed for applications requiring a diode with reverse avalanche characteristics for use as reverse power transient suppressor. Developed to suppress transients in the automotive system, this device operates in reverse mode as power zener diode and will protect
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mr2835smr2835skmr2835s/dmr2835s equivalent+2load dump pulseload dump test
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BC237
Abstract: diode H5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1
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mmsd914t1ambient218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640bc237diode h5
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BC237
Abstract: SOT-223 number code book FREE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
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ot-223solder218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640bc237sot-223 number code book free
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BC237
Abstract: msc2295 MPS2369 equivalent BC547 sot package sot-23 MMBD1000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
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mmbd1000lt1mmbd2000t1mmbd3000t1mmsd1000t1+10ot-23o-236abv218amsc1621t1msc2404bc237msc2295mps2369 equivalentbc547 sot package sot-23mmbd1000
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BC237
Abstract: BC547
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAS116LT1 Switching Diode This switching diode has the following features: Motorola Preferred Device • Low Leakage Current Applications • Medium Speed Switching Times • Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel
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bas116lt1bas116lt3inch/10236ab+7total218amsc1621t1msc2404msd1819amv1620bc237bc547
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transistor 5BM
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diode MMBD6100LT1 ANODE 1 3 CATHODE 2 ANODE 3 1 2 CASE 318 – 08, STYLE 9 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage VR 70 Vdc Forward Current
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mmbd6100lt1236abdevice218amsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640transistor 5bmbc237
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