DIODE SS 16 Search Results

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

Contextual Info: SKKT 27, SKKT 27B, SKKH 27 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R BS I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N YSS UASS UBSS UTSS N VSS UCSS U]SS U@SS QJIN R CT I G*2)> UVSW J5 R VC XEH MZZJ CT[SV? MZZJ CT¥SV? MZZ$ CT[SV?

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

Contextual Info: PD- 91789 International IO R Rectifier PRELIMINARY IR F 7 3 2 4 D 1 FETKY MOSFET / Schottky Diode Co-packaged H EXFET Power M O SFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO -8 Footprint V d ss = -2 0 V R ü S o n = o . 1 8 £ 2

h965

Abstract: in962 zener diode CH965 h985 in746 CH748 CH746 H983 CH749 CH747
Contextual Info: Electrical characteristics at 2 5 ° C u nle ss oth erw ise specified. VOLTAGE REGULATOR PLANAR DIODE CHIPS MICROSEMI TYPE NO. Note 1 & 5 CH4370 CH4371 CH4372 NOMINAL ZENER VOLTAGE Vz @ IZT (Note 2) VOLTS 2.4 2.7 3.0 ZENER MAXIMUM ZENER TEST CURRENT IMPEDANCE

50Y6-GT

Abstract: 50y6gt 50y6 HALF WAVE RECTIFIER 25Z5 rectifier doubler tube full wave rectifier tube power supply rectifier diode plate half wave rectifier using power diode PLATE30
Contextual Info: 50Y6GT/G TUNG-SOL TWIM DIODE HI6H VACUUM RECTIFIER _ VOLTAGE DOUBLER 4’J 16 MIAX. AX UNI PO TEN TIAL CATHODE T-9 2f M AX . HEATER 3re 50 VOLTS MAX. ‘ 0.15 AMPERE AC OR DC G LA SS BULB BOTTOM VIEW M AX . INT ERM EDIA TE 7 PIN OCTAL BASE THE TUNG-SOL 50Y6GT/G

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and

Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W

.25 watt Zener diode

Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.

1n4109-1

Abstract: zener diode 10 sv
Contextual Info: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1

XX 1190

Abstract: cd 1191 XX1110 intensifier XX1111 XX1190 XX1191 diode IN 45 30 kv diode 1200XX
Contextual Info: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode D iode D iode Diode D iode Focusing m ethod electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 G la ss Fiber optics G lass

1N3595-1US

Abstract: JANTXV 1N3595 equivalent 1n3595-1 1N 457 equivalent 1N3595US JANTX 1N3595 jantx1n3595-1 1N3595-1 JANTX JANS1N3595US melf diode D-5D
Contextual Info: 1N3595-1, 1N3595US-1 Standard VF CONTROLLED DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5086, REV. A AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Vf Controlled Diodes Qualified per MIL-PRF-19500/241

Contextual Info: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0432 1 T L M l- 1 3 M T SS 10000 INFRARED LED+ PHOTO IC M TSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

Contextual Info: 6367255 MOTOROLA SC <DIODES /OPTO 89D 77433 DE |t.3fc.725S 0 0 7 7 4 3 3 MOTOROLA D z3-ôr r - Order this data sheet by 2KBP005/D fl | ~ SEMICONDUCTOR TECHNICAL DATA 2KBP005 THRU 2KBP06 Integral Glass Passivated Diode Assem blies ,. diffused g la ss passivated silicon dice interconnected and m olded into rectifier circuit

FK20SM-10

Contextual Info: MITSUBISHI Neh POWER MOSFET F K 2 0 S M -1 0 HIGH-SPEED SWITCHING USE FK20SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15 .9 M A X . 3.2 4 .4 1.0 5 .4 5 5 .4 5 0.6 If Q w Vd ' ss .500V . rDS ON (MAX) 0 .3 6 ÍÍ ID . 20A Integrated Fast Recovery Diode (M A X .)

C 125t Zener diode

Abstract: 1EZ110D5 1EZ120D5 1EZ130D5 1EZ140D5 1EZ150D5 1EZ160D5 1EZ170D5 1EZ180D5 1EZ190D5
Contextual Info: 1EZ110D5 thru Microsemi Corp. 1EZ200D5 The ûiode experts SCOTTSDALE, .47. For m ore inform ation call: 602 941-6300 SILICON 1 WATT ZEN ER DIODE FE A T U R E S • ZENER VOLTAGE 110 V TO 200 V • W ITH STAN DS LARGE SURGE S T R E SS E S • ALSO AVAILABLE IN GLASS. (See Note 6.)

d 5072

Abstract: Scans-0017274
Contextual Info: I2DE8 T E N T A T I V E DATA - T U N O S O L — DIODE-PENTODE MINIATURE TYPE V 8 MAX. COATED UN I P O T E N T I A L CATHODE ~ r~ i is " 1 16 HEATER MAX T-6^ 1 2 . 6 VOLTS 2-Ü ¿ I6 0.200 AMP. AC OR DC M AX. 1_L ANY MOUNTING P O S I T I O N G LA SS BULB

12DV7

Abstract: Scans-0017277
Contextual Info: TENTATIVE DATA I2D V 7 TIM 6-S0I. DOUBLE DIODE TRIODE M I N I A T U R E TYPE r 8 COATED UN I P O TE NT IA L CATHODE MAX. bt- HEATER 16 MAX. ' T -6 i 1 2 . 6 VOLTS D -ä! 16 0 . 1 5 AMP. AC OR DC ANY MOUNTING P O S I T I O N G L A SS BULB BOTTOM VIEW M IN IA T U R E

Contextual Info: J-K t z l Bridge Diode T K >^O SS! Dual In-line Package • O U T L IN E D IM E N S IO N S S1ZBD 600V 0.5A ■ R A T IN G S A bsolute Maximum R atings i i - —_ a I t em Symbol O perating J u n c tio n Tem perature tij i l Average Rectified Forward Current

transistor 2S D 716

Abstract: 2SD1439
Contextual Info: Power Transistors 2SD1439 2SD1439 Silicon NPN Triple-Diffused Junction Mesa Type H orizontal D eflection O utput • Features ■ Package Dim ensions Unj t • mm 15 5max. 4.7n;ax. 13 5max. • D am p er diode built-in o lmax. 1 [ 1 l.Omex. ffÊ p P • High breakdow n v o ltag e and high reliability by g la ss p assiv ation

647c

Abstract: DBA20E DBA20 DBA20B DBA20C Scans-0093209
Contextual Info: Ordering number : EN647C _ D B A 20 N 0.647C SA\YO D iffused J u n c t i o n T y p e Silicon Diode 2.0A Single-Phase Bridge Rectifier I F e a tu re s • P la s tic m olded s tr u c t u r e • G la ss p a s s iv a ti o n for hig h re lia b il ity

D4017

Abstract: CD4017 74C174
Contextual Info: A I R C H O ctober 1987 I L D Revised January 1999 S E M IC G N D U C T Ü R tm CD40174BC • CD40175BC Hex D-Type Flip-Flop • Quad D-Type Flip-Flop General Description All inputs are protected from static discharge by diode clam ps to V DD and V Ss- All flip-flops are controlled by a com m on clock and a com ­

2SD1440

Contextual Info: Power Transistors 2SD1440 2S D 1440 S ilicon NP.N T rip le -D iffu s e d Junction M e s a Type Package D im ensions H orizontal D eflection O utput Unit ! mm ¡ 15 5n • Features 1 3 5nid\ • D am p er diode built-in l l . Or r • High breakdow n v o lta g e and high reliab ility by g la ss p assiv ation