DIODE SS 16 Search Results

diode Z47

Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
Contextual Info: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352

diode OA-79

Abstract: germanium diode OA79 OA79 OA79 diode reverse circuit 0A79 oa79 diode 0A79 diode Diode germanium oa 2-OA79 DIODE OA79
Contextual Info: 0A79 2-O A79 G E R M A N IU M DIODE Germanium diode in all g la ss construction for use in a .m . detector circu its. Type 2-OA79 consist* of 2 diodes OA79 selected lo r operation in a ratio detector circuit. MECHANICAL DATA Dimensions in mm not tlnntd The white band indicates

50Y6-GT

Abstract: 50y6gt 50y6 HALF WAVE RECTIFIER 25Z5 rectifier doubler tube full wave rectifier tube power supply rectifier diode plate half wave rectifier using power diode PLATE30
Contextual Info: 50Y6GT/G TUNG-SOL TWIM DIODE HI6H VACUUM RECTIFIER _ VOLTAGE DOUBLER 4’J 16 MIAX. AX UNI PO TEN TIAL CATHODE T-9 2f M AX . HEATER 3re 50 VOLTS MAX. ‘ 0.15 AMPERE AC OR DC G LA SS BULB BOTTOM VIEW M AX . INT ERM EDIA TE 7 PIN OCTAL BASE THE TUNG-SOL 50Y6GT/G

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and

Contextual Info: 1N6108A thru 1N6136A Standard 500W Bi-directional TVS SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5074, REV. C AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT * SJ*, SX*, SV*, SS* Bi-directional Transient Voltage Suppressor Diode, 500W

.25 watt Zener diode

Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.

1n4109-1

Abstract: zener diode 10 sv
Contextual Info: 1N4100-1/UR-1 to 1N4135-1/UR-1 SENSITRON SEMICONDUCTOR SJ SV SX SS TECHNICAL DATA DATASHEET 5095, Rev A.1 Zener 1.5W DIODE • Zener voltage available from 12V to 100V • Sharp Zener knee • Metallurgically bonded Type Number 1N4100-1/UR ‐1

Contextual Info: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0432 1 T L M l- 1 3 M T SS 10000 INFRARED LED+ PHOTO IC M TSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

Contextual Info: 6367255 MOTOROLA SC <DIODES /OPTO 89D 77433 DE |t.3fc.725S 0 0 7 7 4 3 3 MOTOROLA D z3-ôr r - Order this data sheet by 2KBP005/D fl | ~ SEMICONDUCTOR TECHNICAL DATA 2KBP005 THRU 2KBP06 Integral Glass Passivated Diode Assem blies ,. diffused g la ss passivated silicon dice interconnected and m olded into rectifier circuit

FK20SM-10

Contextual Info: MITSUBISHI Neh POWER MOSFET F K 2 0 S M -1 0 HIGH-SPEED SWITCHING USE FK20SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15 .9 M A X . 3.2 4 .4 1.0 5 .4 5 5 .4 5 0.6 If Q w Vd ' ss .500V . rDS ON (MAX) 0 .3 6 ÍÍ ID . 20A Integrated Fast Recovery Diode (M A X .)

12EL6

Abstract: Scans-0017280
Contextual Info: I2EL6 T E N T A T I V E DATA TU NO -S O L DOUBLE DIODE T R IO D E MINIATURE TYPE y _4_ C OA TE D UN I P OT E NT I A L CATHODE MAX. HE A TE R e 1 2 .6 VOLTS MAX. T -5 ¿ 0 . 1 5 AMP. AC OR DC 9— ¿ 8 MAX ANY MOUNTING P O S I T I O N GLA SS BULB BOTTOM VIEW

lbhm

Contextual Info: LT3471 Dual 1.3A, 1.2MHz Boost/Inverter in 3mm x 3mm DFN DESCRIPTION FEATURES n n n n n n n n n n n 1.2MHz Switching Frequency Low VCESAT Switches: 330mV at 1.3A High Output Voltage: Up to 40V Wide Input Range: 2.4V to 16V Inverting Capability 5V at 630mA from 3.3V Input

Contextual Info: LT3686 37V/1.2A Step-Down Regulator in 3mm x 3mm DFN FEATURES n n n n n n n n n n n DESCRIPTION Wide Input Range: Operation from 3.6V to 37V Overvoltage Lockout Protects Circuit Through 55V Transients Low Minimum On-Time: Converts 16VIN to 3.3VOUT at 2MHz

mp1498

Contextual Info: MP1498 High-Efficiency, 2A, 16V, 1.4MHz Synchronous, Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP1498 is a high-frequency, synchronous, rectified, step-down, switch-mode converter with built-in internal power MOSFETs. It offers a

4TPB470M

Abstract: 6TPB330M FDS6375 FDS6690A MBR0530 SP6120 STPS2L25U
Contextual Info: SP6120 Low Voltage, AnyFETTM, Synchronous,Buck Controller Ideal for 2A to 10A, High Performance, DC-DC Power Converters FEATURES N/C 1 16 BST • Optimized for Single Supply, 3V - 5.5V Applications 15 GH ENABLE 2 ■ High Efficiency: Greater Than 95% Possible

mp2233

Contextual Info: MP2233 High-Efficiency, 3A, 16V, 1.4MHz Synchronous, Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2233 is a high-frequency, synchronous, rectified, step-down switch mode converter with built in internal power MOSFETs. It offers a

2A 12v Low Dropout Regulator

Abstract: diode d1n4148 electric capacitor 330uF 25V SC1109EVB D1N4148 IRLR3103 SC1109 SC1109CSTR D1N41
Contextual Info: SYNCHRONOUS PWM CONTROLLER WITH DUAL LOW DROPOUT REGULATOR CONTROLLERS SC1109 PRELIMINARY - October 16, 2000 DESCRIPTION FEATURES The SC1109 was designed for the latest high speed motherboards. It combines a synchronous voltage mode controller switching section with

GEA MARKING

Abstract: 141kHz MP1527DM MP1527DR 1N5819HW EV0034 MP1527 TSSOP14 100 GEA
Contextual Info: MP1527 2A, 1.3MHz Step-Up Converter Monolithic Power Systems General Description Features The MP1527 is a 2A, fixed frequency step-up converter in a tiny 16 lead QFN package. The high 1.3MHz switching frequency allows for smaller external components producing a

MP1527DR-LF

Abstract: MP1527DR GEA MARKING
Contextual Info: MP1527 2A, 1.3MHz Step-Up Converter Monolithic Power Systems General Description Features The MP1527 is a 2A, fixed frequency step-up converter in a tiny 16 lead QFN package. The high 1.3MHz switching frequency allows for smaller external components producing a

mp2240

Contextual Info: MP2240 High-Efficiency, 3A, 16V, 800kHz Synchronous, Step-Down Converter The Future of Analog IC Technology DESCRIPTION FEATURES The MP2240 is a high-frequency, synchronous, rectified, step-down, switch-mode converter with built-in power MOSFETs. It offers a very

2SC2604

Contextual Info: SC2604 Simple PWM Boost Controller with Input Disconnect FET Drive POWER MANAGEMENT Features „„ „„ „„ „„ „„ „„ „„ „„ „„ „„ „„ „„ „„ „„ Description Input Voltage Range: 4.5V to 16V 1% Voltage Reference Accuracy Up to 95% Efficiency

Contextual Info: Preliminary n ¿ '^ E G & G R E T IC O SC Series N Solid State Line Scanners General Description Sensor Characteristics Start ] 01 E 3 20 02 Antiblooming Drain ABD V DDG NC V Sub — I < ( 4 19 1 E 5 18 ] NC 6 17 1 VSub t I E 7 16 ] NC Reset G ate [ 8 15

Contextual Info: TOSHIBA { DI SC RE TE/OPTO} Tí 99D 16737 9 097250 TOSH I BA <DISCRETE/OPTO> ¿foSTulli, DE^I T D ci72SD GGlb737 7 D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 6 7 h T E C H N IC A L DA TA SILICON N CHANN EL MOS TYPE 7T-M0S I TENTATIVE INDUSTRIAL APPLICATIONS