1N5907 Search Results

Contextual Info: 1N5907+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current60

1N5907 JANTX

Abstract: 1N5908 diode DO-202AA 1N5907 1N5907 JANTXV 1N5908 IEC61000-4-4 JANTXV1N5907
Contextual Info: 1N5907 and 1N5908 1500 WATT LOW VOLTAGE TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This pair of unidirectional low voltage Transient Voltage Suppressor TVS devices for the 1N5907 and 1N5908 JEDEC registrations with different packages have the same high Peak Pulse Power rating of 1500 W with

Contextual Info: 1N5907+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current60

Contextual Info: 1N5907C Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage5 I(PPM) Max.(A)Pk.Pulse Current165 V(C) Nom. (V) Clamping Voltage8.6

IN5644

Abstract: lnbf 1N5907 1N5629 1N5629A 1N5630 1N5630A 1N5632 1N5633 1N5665
Contextual Info: 1N5629 thru 1N5665 and 1N5907 Microsemi Corp. Features • • • • • • TRANSIENT ABSORBTION ZENER Protects circuits from harmful transients Absorbs 1 ms transients up to 1S0Q watts Clamps transient in 1 pico sec 1 watt continuous power dissipation

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

IN5907

Abstract: TRANSZORB transzorb application note 1N5907 JANTX 1N5907 DO13 transzorb symbol What is a TRANSZORB 1N5908 JAN IN5907
Contextual Info: ûENL INSTR/ POIdER 5 bE ^ General ^ ^ Semiconductor ^ « Industries, Inc. D • 3ÛT0137 T - l i - 2 3 0004117 357 IGIC Tr a n s Z o r b TR A N SIENT VOLTAGE SUPPRESSORS 1N5907 AND 1N5908 FEATURES APPLICATION • 5.0 volts Reverse Stand-Off voltage • Designed for T2L Logic protection

Contextual Info: 1N5907+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current60

1N5908T

Contextual Info: • NL IN S TR / POIdER ^ 5 bE General ^ Sem iconductor ^ « Industries, Inc. D • 3ÛT0137 T -ll-23 0 0 0 4 1 1 7 357 I6 IC Tr a n s Zo r b TRANSIENT VOLTAGE SUPPRESSORS 1N5907 AND 1N5908 FEATURES APPLICATION • 5.0 volts Reverse Stand-Off voltage • Designed for T2L Logic protection

IN5908

Abstract: 1N590A
Contextual Info: 602 941-6300 FEATURES TRANSIENT ABSORPTION ZENER • 5.0 VOLTS REVERSE STANO-OFF VOLTAGE • DESIGNED FOR T 2L LOGIC PROTECTION • 1500 WATTS PEAK PULSE POWER DISSIPATION The 1N5907 TAZ, packaged in a hermetically sealed glass-to-metal pack­ age, is available in JAN, JANTX and JANTXV qualified to MIL-STD19500/500. The 1N5907 and 1N5908 protect TTL, ECL, DTL, MOS and MSI

Contextual Info: 1500 Watt Peak Pulse Power 1 Watt Steady State 1N5907 5 Watt Steady State (1N5908) CECC APPROVAL ON 1N5907 FEATURES 6Tim * Glass Passivated Junction Excellent clamping capability Low zener impedance 100% Tested -55°C to +175°C Hermetically sealed Uni-polar

Contextual Info: DIGITRON SEMICONDUCTORS 1N5907-1N5908 1500W TRANISIENT VOLTAGE SUPPRESSORS UNIDIRECTIONAL MAXIMUM RATINGS 1N5907 1N5908 1500W for 10/1000µs @ lead temperature TL = 25°C with repetition rate of 0.01% or less Operating and storage temperature -65 to +175°

Contextual Info: 1N5907 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current60

1n5908

Abstract: 1n5907 transistor 5908
Contextual Info: ^ ^ ^ Tr a n s Z o r b • T R A N S IE N T VOLTAGE SU PPRES SO R S General Semiconductor • Industries, Inc. 1N5907 AND 1N5908 FEATURES APPLICATION • 5.0 volts Reverse Stand-Off voltage • Designed for T*L Logic protection • Each device 100% tested

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Device Test

Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Contextual Info: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance

JAN1N5907

Contextual Info: Transient Voltage Suppressors ] 1.4KESD90 1.4KESD90A MLL1.4KESD90 M LL1.4KESD90A 1.4KESD100 1.4KESD100A MLL1.4KESD100 M LL1.4KESD100A 1.4KESD110 1.4KESD110A MLL1.4KESD110 M LL1-4KESD 110A 1.4KESD120 1.4KESD120A MLL1.4KESD120 M LL1.4KESD120A 1.4KESD130 1.4KESD130A

SMC50

Abstract: SMC5.0
Contextual Info: T R A N S Z O R B TVS Q U I C K REFERENCE GUIDE P E A K PU LS E LOW PO W ER R AN G E ; MEDIUM 600W PEAK PULSE POWER RATING @ 1m$ 1S00W Computer, Consumer, Medical A PPLIC A T IO N PAGE REFERENCE 700W SÄ5Ä GMP-5 thru GMP-58 SAtTDA Page 1-36 Papi-« ifeta

MIL-S-19500

Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
Contextual Info: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER

1N5907 JANTX

Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

IN5908

Abstract: IN5907 zener diode 1n5908 1N5908 diode IN5908 ON MIL-S-19500/500 1N5908 1N5908 diode zener 1N5907 JAN IN5907
Contextual Info: 1N 5 9 0 7 and IN5908 Microsemi Corp. $ The dioúe experts SCOTTSDALE, AZ F o r m o r e i n f o r m a t i o n call: 6 0 2 9 4 1 -6 3 0 0 FEATURES TRANSIENT ABSORPTION ZENER • 5.0 V OLTS R EV E R S E S T A N D -O FF VOLTAGE • DES IG N ED FOR T ?L LOGIC PR OTECTIO N