1N5555 Search Results

D0-202AA

Contextual Info: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

Contextual Info: Microsemi Corp. SANTA ANA, CA SCOTTSDALE, A l For m ore inform ation call: 602 941-6300 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARM FUL TRANSIENTS • ABSORBS TRANSIENTS UP TO I500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF I PICO SECOND

DO-202AA

Abstract: 1N5555 military part marking symbols jan Diode 1N5555 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5555 1N5557

in5556

Abstract: DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5555 1N5556 1N5557 1N5558 NE017
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

Contextual Info: 1N5555+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage33 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage31 I(PPM) Max.(A)Pk.Pulse Current32.0

1N5555

Abstract: Diode 1N5555
Contextual Info: 1N5555 asii TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. MAXIMUM RATINGS 200 A @ t = 8.33 mS Is REVERSE STAND OFF VOLTAGE 30.5V Vr

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C

Contextual Info: 1N5555 Transient Voltage Suppressor 6.98 Diodes Transient Suppressors Unidirectional . Page 1 of 1 Enter Your Part # Home Part Number: 1N5555 Online Store 1N5555 Diodes Transient Voltage Suppressor Transistors Enter code INTER3 at checkout.* Integrated Circuits

DO-202AA

Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
Contextual Info: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the

Contextual Info: 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

TVS Transient Voltage Suppressors

Abstract: 1N5557 bje fuse
Contextual Info: TVS Transient Voltage Suppressors 1N5555 th r u 1N555B DESCRIPTION This specification sheet defines a series of 1500 Watt Silicon Transient Suppressors for use primarily in Airborne Equipment where large voltage transients can permanently damage voltage sensitive components. These TVS

transient suppressor diodes

Abstract: 1N5555
Contextual Info: Back to Zener Diodes 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

Contextual Info: 1N5555 asi TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5555 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. .220" ± .005 DIA. " 5 . 5 8 t .127 DIA. mm .10" MAX. DIA. " 2 . 5 4 MAX. DIA. (mm)

1N5646A JANTX

Abstract: 1N5555UEJ diode 716 1N5645A JANTX 1N5635A
Contextual Info: INCH-POUND MIL-PRF-19500/716 28 April 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR TYPES 1N5555UEG THROUGH 1N5558UEG, 1N5555UEJ THROUGH 1N5558UEJ, 1N5629AUEG THROUGH 1N5665AUEG, 1N5629AUEJ THROUGH

Contextual Info: DIGITRON SEMICONDUCTORS 1N5555-1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR MAXIMUM RATINGS 1500 Watts for 10/1000µs with repetition rate of 0.01% or less* at lead temperature TL 25°C Operating and Storage Temperatures -65 to +175°C Thermal Resistance

Contextual Info: 1N5555+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage33 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage31 I(PPM) Max.(A)Pk.Pulse Current32.0

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

diode IN5552

Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554
Contextual Info: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

1N5557

Abstract: 1N5555
Contextual Info: • f a ^ ^ ^ FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per M IL -S -19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested • • • • M A XIM U M R A TINGS 1500 W atts o f Peak Pulse P ow er d is ­

MIL-S-19500

Abstract: MIL-S-19500-507 1N538 1N3189 JAN 1N3190 JAN1N3189 JAN1N538 1N3190 JAN JAN1N3190 1n547 equivalent
Contextual Info: MILITARY DEVICES The following table lists the device types available from Semicon Components Inc. which are manufactured and tested in accordance with the requirements of MIL-S-19500 Revision "G” and the appropriate indicated detail specification. TYPE NUMBER

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­