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13N88-110.1
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Portescap
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Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 12400 RPM 12VDC |
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171.91KB |
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13N88-213E.1
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Portescap
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Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 12300 RPM 6VDC |
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171.91KB |
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13N88-216E.1
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Portescap
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Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 10800 RPM 4.5VDC |
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171.91KB |
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13NA055P301
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Unknown
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Multi Output 55 to 110 Watt Range Power Modules |
Scan |
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794.19KB |
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13NS360056
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Unknown
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NS Series 240 - 960 Watt Power Supply Unit |
Scan |
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377.26KB |
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13N50A
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AK Semiconductor
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13N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 13A continuous drain current, 0.35 ohm typical on-resistance at 10V gate-source voltage, and TO-220F or TO-220C package. |
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13N65A
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AK Semiconductor
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13A 650V N-channel MOSFET with low on-resistance of 0.52 ohm typical at VGS=10V, TO-220FG package, suitable for high-speed switching applications. |
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SL13N45F
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SLKOR
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TC2020RGB-3CJH-TX1813N1
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Shenzhen TCWIN Lighting Co Ltd
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2.2x2.2x1.05mm SMD LED with integrated 24-bit GRB IC, 5V operation, 12mA drive current, and one-wire cascading for smart RGB pixel applications. |
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CS-0603A-13N
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JWD
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Wire wound chip inductor in 0603 size with inductance from 1.5nH to 560nH, Q up to 40, self-resonant frequency up to 12.5GHz, rated current up to 700mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%. |
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SLP_F13N50A
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. |
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SLF13N50U
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.40 ohm typical RDS(on) at VGS = 10V, low gate charge of 35nC, and fast switching performance suitable for high-efficiency power applications. |
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UMH13N
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JCET Group
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Dual digital transistors (NPN+NPN) in SOT-363 package with 100 mA output current, built-in resistors, 50 V supply voltage, and 150 mW power dissipation, designed for low current peripheral driving and IC input control applications. |
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MDD13N50F
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Microdiode Semiconductor
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500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 13A, RDS(on),max 0.52Ω@VGS=10V, Qg,typ 37nC, TO-220F-3L. |
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EMR13N03M
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ETEK
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EMR13N03M uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. |
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JMPC13N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. |
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SL13N50FS
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SLKOR
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FM33LC013N
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Shanghai Fudan Microelectronics Group Co Limited
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FM33LC0xx is a low-power MCU based on ARM Cortex-M0, featuring multiple GPIOs, UART, SPI, I2C, USB 2.0 FS, ADC, AES hardware acceleration, and low-power timer modules with support for sleep and deep-sleep modes. |
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JMPF13N50BJ
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Jiangsu JieJie Microelectronics Co Ltd
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500V, 13A N-channel Enhancement Mode Power MOSFET in TO-220FP-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, designed for load switching, PWM applications, and power management with fast switching and improved dv/dt capability. |
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SLT13N50A
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Maplesemi
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500V N-Channel MOSFET with 13A continuous drain current, 0.52 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and TO-252 package for high efficiency power applications. |
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13N50A
