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    13N---------- Search Results

    13N---------- Datasheets (22)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    13N88-110.1
    Portescap Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 12400 RPM 12VDC Original PDF 171.91KB
    13N88-213E.1
    Portescap Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 12300 RPM 6VDC Original PDF 171.91KB
    13N88-216E.1
    Portescap Motors, Solenoids, Driver Boards/Modules - Motors - AC, DC - STANDARD MOTOR 10800 RPM 4.5VDC Original PDF 171.91KB
    13NA055P301
    Unknown Multi Output 55 to 110 Watt Range Power Modules Scan PDF 794.19KB 12
    13NS360056
    Unknown NS Series 240 - 960 Watt Power Supply Unit Scan PDF 377.26KB 5
    badge 13N50A
    AK Semiconductor 13N50A N-channel enhancement mode MOSFET with 500V drain-source voltage, 13A continuous drain current, 0.35 ohm typical on-resistance at 10V gate-source voltage, and TO-220F or TO-220C package. Original PDF
    badge 13N65A
    AK Semiconductor 13A 650V N-channel MOSFET with low on-resistance of 0.52 ohm typical at VGS=10V, TO-220FG package, suitable for high-speed switching applications. Original PDF
    badge TC2020RGB-3CJH-TX1813N1
    Shenzhen TCWIN Lighting Co Ltd 2.2x2.2x1.05mm SMD LED with integrated 24-bit GRB IC, 5V operation, 12mA drive current, and one-wire cascading for smart RGB pixel applications. Original PDF
    badge CS-0603A-13N
    JWD Wire wound chip inductor in 0603 size with inductance from 1.5nH to 560nH, Q up to 40, self-resonant frequency up to 12.5GHz, rated current up to 700mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%. Original PDF
    badge SL13N45F
    SLKOR Original PDF
    badge SLP_F13N50A
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.42 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and high avalanche energy rating, suitable for high-efficiency power conversion applications. Original PDF
    badge SLF13N50U
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.40 ohm typical RDS(on) at VGS = 10V, low gate charge of 35nC, and fast switching performance suitable for high-efficiency power applications. Original PDF
    badge UMH13N
    JCET Group Dual digital transistors (NPN+NPN) in SOT-363 package with 100 mA output current, built-in resistors, 50 V supply voltage, and 150 mW power dissipation, designed for low current peripheral driving and IC input control applications. Original PDF
    badge JMPC13N50BJ
    Jiangsu JieJie Microelectronics Co Ltd 500V, 13A N-channel enhancement mode power MOSFET in TO-220C-3L package with RDS(ON) less than 0.62 ohm at VGS = 10V, suitable for load switching, PWM, and power management applications. Original PDF
    badge MDD13N50F
    Microdiode Semiconductor 500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 13A, RDS(on),max 0.52Ω@VGS=10V, Qg,typ 37nC, TO-220F-3L. Original PDF
    badge SL13N50FS
    SLKOR Original PDF
    badge EMR13N03M
    ETEK EMR13N03M uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Original PDF
    badge SLF13N50C
    Maplesemi SLP13N50C and SLF13N50C are 500V, 13A N-channel MOSFETs with a typical RDS(on) of 386 mΩ at VGS = 10V, low gate charge of 44nC, and high avalanche energy endurance, suitable for high-efficiency power conversion applications. Original PDF
    badge SLT13N50A
    Maplesemi 500V N-Channel MOSFET with 13A continuous drain current, 0.52 ohm typical RDS(on) at 10V VGS, low gate charge of 19.1nC, and TO-252 package for high efficiency power applications. Original PDF
    badge FM33LC013N
    Shanghai Fudan Microelectronics Group Co Limited FM33LC0xx is a low-power MCU based on ARM Cortex-M0, featuring multiple GPIOs, UART, SPI, I2C, USB 2.0 FS, ADC, AES hardware acceleration, and low-power timer modules with support for sleep and deep-sleep modes. Original PDF
    SF Impression Pixel

    13N---------- Price and Stock

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    Murata Manufacturing Co Ltd LQP03HQ13NH02D

    FIXED IND 13NH 300MA 500 MOHM
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    DigiKey () LQP03HQ13NH02D Digi-Reel 10,544 1
    • 1 $0.12
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    LQP03HQ13NH02D Cut Tape 10,544 1
    • 1 $0.12
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    Ameya Holding Limited LQP03HQ13NH02D 15,000
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    Win Source Electronics LQP03HQ13NH02D 61,520
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    Murata Manufacturing Co Ltd LQW18AN13NJ8ZD

    FIXED IND 13NH 1.5A 64 MOHM SMD
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    DigiKey () LQW18AN13NJ8ZD Cut Tape 5,529 1
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    LQW18AN13NJ8ZD Digi-Reel 5,529 1
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    LQW18AN13NJ8ZD Tape & Reel 4,000 4,000
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    Goford Semiconductor GT013N04D5

    N40V,195A,RD<1.7M@10V,VTH2.0V~4.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GT013N04D5 Tape & Reel 5,000 5,000
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    Micro Commercial Components MCM13N03-TP

    N-CHANNEL MOSFET,DFN2020-6LE
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    DigiKey () MCM13N03-TP Tape & Reel 3,000 3,000
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    MCM13N03-TP Digi-Reel 3,000 1
    • 1 $1.02
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    MCM13N03-TP Cut Tape 3,000 1
    • 1 $1.02
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    STMicroelectronics STB13N80K5

    MOSFET N-CH 800V 12A D2PAK
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    DigiKey () STB13N80K5 Digi-Reel 474 1
    • 1 $5.25
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    STB13N80K5 Cut Tape 474 1
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    STMicroelectronics STB13N80K5 1,526 1
    • 1 $5.15
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