1N5556 Search Results

lN555

Abstract: 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556 1N5557 1N5558 1N5559
Contextual Info: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5

Contextual Info: 1N5556 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N5556 Availability Online Store

D0-202AA

Contextual Info: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

Contextual Info: Microsemi Corp. SANTA ANA, CA SCOTTSDALE, A l For m ore inform ation call: 602 941-6300 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARM FUL TRANSIENTS • ABSORBS TRANSIENTS UP TO I500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF I PICO SECOND

Contextual Info: asi 1N5556 TRANSIENT SUPPRESSOR DIODE PACKAGE STYLE DO-13 DESCRIPTION: The 1N5556 is Designed to Protect Sensitive Circuits From Voltage transients. Clamping Time is typically 1 pS. _ .220” ± .005 DIA. 5.58 * .127 DIA. {mm} .10" MAX. DIA. " 2 .5 4 MAX. DIA. mm

in5556

Abstract: DO13 package IN5555 silicon transient suppressor diodes transient suppressor 1N5555 1N5556 1N5557 1N5558 NE017
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

Contextual Info: 1N5556+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24.0

n555

Abstract: N5556 D0-202AA 1N5555 1N5556 1N5557 1N5558
Contextual Info: Microsemi Corp. SANTA ANA, CA 1N5556 1N5557 1N5558 SCOTTSDALE, A Z f o r m o re in fo r m a tio n cal!: 6 0 2 941-6300 TRANSIENT ABSORPTION ZENER FEATURES • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S • CLAMPING RESPONSE TIM E OF 1 PICO SECOND

Contextual Info: 1N5556+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24.0

DO-202AA

Abstract: 1N5555 JANTXV 1N5555 Lightning protection 1N5556 1N5557 1N5558 IEC61000-4-4 military part marking symbols jan 1N6036
Contextual Info: 1N5555 1N5557 1N5556 1N5558 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR SCOTTSDALE DIVISION APPEARANCE This Transient Voltage Suppressor TVS series for 1N5555 thru 1N5558 are JEDEC registered selections for unidirectional devices. All have the

Contextual Info: 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

transient suppressor diodes

Abstract: 1N5555
Contextual Info: Back to Zener Diodes 1N5555 1N5556 1N5557 1N5558 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES The NES 1N5555 to 1N5558 series o f Silicon Voltage Transient Suppressor diodes are designed primarily to protect airborne and telephone electronic equipment from high voltage transients. Also, because o f the inherent

1N561 JAN

Abstract: IN5552 IN5618 DIODE lN555 1N5550 1N5551 1N5553 1N5554 1N5555 1N5556
Contextual Info: Type No. 1N 5550 1N 5551 1 N 55 5 2 1N 5553 1N 5554 Zener Type Ho. PIV lo 25°C Volts Amps 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0 5.0 Zener Voltage at IZT @ mA Volts IN 5555 1N5556 1N5557 1N5558 1N 5559 IN 5560 1N 5561 33.0 43.7 54.0 191.0 6.8 7.5

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6762

Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
Contextual Info: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index

diode IN5552

Abstract: SCR 25 amps PIV 600 lN555 microsemi 1n5620 1n5620 IN5618 DIODE 1N5550 1N5551 js 10 watt zener diode 1N5554
Contextual Info: PIV lo 25°C Volts Amps VF IR Volts /iA 1.0 1.0 1.0 1.0 1.0 1.0 Type No. 1N 5550 1N 5551 1N 5552 1N 5553 1N 5554 Zener Type Ho. I N 5555 1N 5556 1N 5557 1N 5558 1N 5559 IN 5560 1N 5561 1N 5562 1N 5563 1N 5564 200 400 600 800 1000 5 5 °C 5.0 5.0 5.0 5.0

1N5557

Abstract: 1N5555
Contextual Info: • f a ^ ^ ^ FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per M IL -S -19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested • • • • M A XIM U M R A TINGS 1500 W atts o f Peak Pulse P ow er d is ­

1N5907 JANTX

Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,

DO-202AA

Abstract: 1N5555 military part marking symbols jan Diode 1N5555 1N5556 1N5557 1N5558 IEC61000-4-4 JANTXV1N5555 1N6072A JANTX
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS 1N5555 1N5557

Contextual Info: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

Contextual Info: GEMI INSTR/ POl i l ER . M General Semiconductor Industries, Inc. FEATURES 1500 watts Peak Pulse Power dissipation MIL qualified per MIL-S-19500/434 Designed for DC applications Hermetically sealed package Each device 100% tested MAXIMUM RATINGS • 1500 watts of Peak Pulse Power dis­

1N5629a

Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
Contextual Info: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C