MA2S077 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 VR Forward current IF Operating ambient temperature * Topr Storage temperature

MA2S077G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Code SSMini2-F4 • Pin Name 1: Anode 2: Cathode Th an W is k y Th e a pro ou Fo an po du fo

MA2S077G

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For band switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter • Code

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 5˚ • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD • SS-Mini type package, allowing downsizing of equipment and

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit : mm For band switching 0.15 min. + 0.05 0.27 − 0.02 0.15 min. + 0.05 0.8 ± 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • SS-mini type package, allowing downsizing of equipment and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *

MA2S077

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *

Contextual Info: MA111 Band Switching Diodes MA2S077 Silicon epitaxial planer type Unit : mm For band switching 0.15 min. 0.15 min. +0.05 voltage dependence of diode capacity CD ● SS-Mini +0.05 ● Less 0.27–0.02 forward dynamic resistance rf 0.8±0.1 ● Low 0.27–0.02

MA2S077

Contextual Info: Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 0.15 min. Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature * Topr −25 to +85 °C Storage temperature

MA2S077

Abstract: marking AI RF
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077 Silicon epitaxial planar type Unit: mm For band switching 0.13+0.05 –0.02 0.27+0.05 –0.02 Unit Reverse voltage VR 35 V Forward current IF 100 mA Operating ambient temperature *

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Band Switching Diodes MA2S077G Silicon epitaxial planar type For band switching • Package ■ Features • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP