DIODE SMD MARKING CODE PG Search Results

RESISTOR NETWORK SMD 8 PIN array isolated 2512

Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011

BB157

Abstract: SC76 SC-76 smd DIODE code marking Q
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BB157/TM VHF variable capacitance diode Product specification 2002 Mar 05 Philips Semiconductors Product specification VHF variable capacitance diode BB157/TM FEATURES PINNING • High linearity PIN

DIODE smd marking CODE PG

Abstract: MARKING CODE BE SC76 BB157 SC76 SC-76 smd DIODE code marking Q PHILIPS DIODE smd marking A1 smd diode code A1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BB157 VHF variable capacitance diode Product specification Supersedes data of 2002 Feb 06 2002 Mar 05 Philips Semiconductors Product specification VHF variable capacitance diode BB157 FEATURES PINNING

IS41B

Abstract: smd oscillator 10pin 395 LM2612 LM2612ABL LM2612ABLX LM2612BBL LM2612BBLX LM2612BL IS41A smd marking BD dc-dc
Contextual Info: LM2612BL 400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits General Description Key Specifications The LM2612 step-down DC-DC converter is optimized for powering ultra-low voltage circuits from a single Lithium-Ion

2A109

Abstract: Q67040-S4388 IDP04E120 smd diode UM 2a
Contextual Info: IDP04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage • Easy paralleling

10N10L

Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
Contextual Info: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 154 m
ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking

SPP02N60S5

Abstract: 02N60S5
Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1

03N60S5

Abstract: Q67040-S4184 SPP03N60S5
Contextual Info: SPP03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances

BSP129

Abstract: E6327 Q67000-S073 F035
Contextual Info: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Depletion mode I DSS,min 240 V 6 Ω 0.05 A • dv /dt rated • Available with V GS(th) indicator on reel PG-SOT-223 Type Package Ordering Code Tape and Reel Information

2n03l

Abstract: SPD30N03S2L-07 2N03 2N03L07 spd30n
Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature

Contextual Info: UCC3882/-1 www.ti.com SLUS294C – MARCH 1999 – REVISED FEBRUARY 2010 AVERAGE CURRENT MODE SYNCHRONOUS CONTROLLER WITH 5-BIT DAC Check for Samples: UCC3882/-1 FEATURES 1 • • • • • • • • • • DESCRIPTION Combined DAC/Voltage Monitor and PWM With

05N03LA

Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID

01n60

Abstract: 01N60C3 SPS01N60C3
Contextual Info: SPS01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

06n80c3

Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type

2n08l07

Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN04L03

Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

2N04L03

Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

PN08L07

Abstract: Diode smd 86 OPTIMOS SMD MARKING CODE PN08L07 S Application Note ANPS071E marking CODE R SMD DIODE SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag IPB100N08S2L-07
Contextual Info: IPB100N08S2L-07 IPP100N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature

3pn06l03

Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow

DIODE D29 -08

Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

3N06L06

Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow

marking CODE R SMD DIODE

Abstract: SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22
Contextual Info: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ A • MSL1 up to 260°C peak reflow

D45E60

Abstract: RR350 INFINEON D45E60 IDB45E60 IDP45E60 Q67040-S4375
Contextual Info: IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature

04N80C3

Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
Contextual Info: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance