Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE SMD MARKING CODE PG Search Results

    DIODE SMD MARKING CODE PG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA
    		Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) PDF Buy
    54LS190/BEA
    		Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) PDF Buy
    MG80C186-10/BZA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101ZA) PDF Buy
    ICM7555MTV/883
    		Rochester Electronics LLC ICM7555MTV/883 - Dual marked (5962-8950303GA) PDF Buy
    MQ80C186-10/BYA
    		Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850101YA) PDF Buy

    DIODE SMD MARKING CODE PG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RESISTOR NETWORK SMD 8 PIN array isolated 2512

    Abstract: 88em8011 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606
    Contextual Info: Cover 88EM8011 Power Factor Correction Controller Datasheet Patents, Patents Pending Including US Pat. Nos. 7,266,001 and 7,292,013 Doc. No. MV-S104861-00, Rev. November 28, 2007 Marvell. Moving Forward Faster Document Classification: Proprietary 88EM8011


    Original     		88EM8011 MV-S104861-00, 88EM8011 MV-S104861-00 RESISTOR NETWORK SMD 8 PIN array isolated 2512 MILMAX MACHINE marking code EA SMD MOSFET MOSFET marking smd NU Zener diode smd marking code nu prestera package marking semiconductor smd marking codes diode SMD MARKING CODE 606 PDF

    BB157

    Abstract: SC76 SC-76 smd DIODE code marking Q
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BB157/TM VHF variable capacitance diode Product specification 2002 Mar 05 Philips Semiconductors Product specification VHF variable capacitance diode BB157/TM FEATURES PINNING • High linearity PIN


    Original     		M3D049 BB157/TM BB157 OD323 SC-76) SCA74 613514/01/pp8 SC76 SC-76 smd DIODE code marking Q PDF

    IS41B

    Abstract: smd oscillator 10pin 395 LM2612 LM2612ABL LM2612ABLX LM2612BBL LM2612BBLX LM2612BL IS41A smd marking BD dc-dc
    Contextual Info: LM2612BL 400mA Sub-miniature, Programmable, Step-Down DC-DC Converter for Ultra Low-Voltage Circuits General Description Key Specifications The LM2612 step-down DC-DC converter is optimized for powering ultra-low voltage circuits from a single Lithium-Ion


    Original     		LM2612BL 400mA LM2612 400mA 300mA 300mAife LM2612BL IS41B smd oscillator 10pin 395 LM2612ABL LM2612ABLX LM2612BBL LM2612BBLX IS41A smd marking BD dc-dc PDF

    2A109

    Abstract: Q67040-S4388 IDP04E120 smd diode UM 2a
    Contextual Info: IDP04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage • Easy paralleling


    Original     		IDP04E120 PG-TO220-2-2. Q67040-S4388 D04E120 2A109 Q67040-S4388 IDP04E120 smd diode UM 2a PDF

    10N10L

    Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
    Contextual Info: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking


    Original     		SPI10N10L SPP10N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4163 10N10L 10N10L Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L PDF

    BSP129

    Abstract: E6327 Q67000-S073 F035
    Contextual Info: BSP129 SIPMOS Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Depletion mode I DSS,min 240 V 6 Ω 0.05 A • dv /dt rated • Available with V GS(th) indicator on reel PG-SOT-223 Type Package Ordering Code Tape and Reel Information


    Original     		BSP129 PG-SOT-223 Q67000-S073 E6327: PG-SOT223 Q67042 S4294 BSP129 E6327 Q67000-S073 F035 PDF

    2n03l

    Abstract: SPD30N03S2L-07 2N03 2N03L07 spd30n
    Contextual Info: SPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 6.7 mΩ ID 30 A • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) PG-TO252-3-11 • Superior thermal resistance • 175°C operating temperature


    Original     		SPD30N03S2L-07 PG-TO252-3-11 SPD30N03S2L-07 PG-TO252-3-11 Q67042-S4091 2N03L07 726-SPD30N03S2L-07 2n03l 2N03 2N03L07 spd30n PDF

    05N03LA

    Abstract: 05n03 fet to251 marking CODE R SMD DIODE IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03L
    Contextual Info: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03 fet to251 marking CODE R SMD DIODE P-TO252-3-11 05N03L PDF

    01n60

    Abstract: 01N60C3 SPS01N60C3
    Contextual Info: SPS01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3 PDF

    06n80c3

    Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
    Contextual Info: SPD06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type


    Original     		SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS PDF

    07N60S5

    Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 PG-TO252 PG-TO251 SPD07N60S5 PG-TO251 07N60S5 PDF

    2n08l07

    Abstract: 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2
    Contextual Info: IPB80N08S2L-07 IPP80N08S2L-07 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 75 V R DS on ,max (SMD version) 6.8 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N08S2L-07 IPP80N08S2L-07 PG-TO263-3-2 PG-TO220-3-1 SP0002-19051 2N08L07 2n08l07 2N08L07 POWER IPP80N08S2L-07 2n08l07 marking IPB80N08S2L-07 2n08l "2N08L07" 2n08 ANPS071E PG-TO263-3-2 PDF

    PN04L03

    Abstract: smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42
    Contextual Info: IPB100N04S2L-03 IPP100N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.0 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB100N04S2L-03 IPP100N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-19065 PN04L03 PN04L03 smd diode code gs Application Note ANPS071E ANPS071E marking CODE R SMD DIODE smd diode marking 77 SMD MARKING CODE SMD MARKING CODE 102 smd TR marking code G11 TRANSISTOR SMD MARKING CODE 42 PDF

    2N04L03

    Abstract: IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063
    Contextual Info: IPB80N04S2L-03 IPP80N04S2L-03 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.1 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N04S2L-03 IPP80N04S2L-03 PG-TO263-3-2 PG-TO220-3-1 SP0002-20158 2N04L03 2N04L03 IPP80N04S2L-03 OPTIMOS SP0002-20158 DD-32 TRANSISTOR SMD MARKING CODE 42 ANPS071E IPB80N04S2L-03 PG-TO263-3-2 SP0002-19063 PDF

    3pn06l03

    Abstract: 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13
    Contextual Info: IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87978 3pn06l03 690 d80 IPB100N06S3L-03 IPI100N06S3L-03 IPP100N06S3L-03 PG-TO263-3-2 SP0000-87978 SMD CODE G13 PDF

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 PDF

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06 PDF

    marking CODE R SMD DIODE

    Abstract: SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22
    Contextual Info: IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Logic Level - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 21.3 25 V mΩ A • MSL1 up to 260°C peak reflow


    Original     		IPB25N06S3L-22 IPI25N06S3L-22, IPP25N06S3L-22 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-87994 marking CODE R SMD DIODE SP0000-87994 IPB25N06S3L-22 IPI25N06S3L-22 IPP25N06S3L-22 PG-TO263-3-2 3N06L22 PDF

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Contextual Info: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking PDF

    p2n04l03

    Abstract: IPB160N04S2L-03 SP0002-18153 TRANSISTOR SMD MARKING CODE 42 ANPS071E SP00021
    Contextual Info: IPB160N04S2L-03 OptiMOS - T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max 2.7 mΩ ID 160 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB160N04S2L-03 PG-TO263-7-3 SP0002-18153 P2N04L03 p2n04l03 IPB160N04S2L-03 SP0002-18153 TRANSISTOR SMD MARKING CODE 42 ANPS071E SP00021 PDF

    PN0404

    Abstract: IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056
    Contextual Info: IPB100N04S2-04 IPP100N04S2-04 OptiMOS Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 40 V R DS on ,max (SMD version) 3.3 mΩ ID 100 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB100N04S2-04 IPP100N04S2-04 PG-TO263-3-2 PG-TO220-3-1 SP0002-19061 PN0404 PN0404 IPB100N04S2-04 ANPS071E marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE 42 TRANSISTOR SMD MARKING CODE ag TRANSISTOR SMD MARKING CODE t 04 IPP100N04S2-04 PG-TO263-3-2 SP0002-19056 PDF

    65C7019

    Abstract: IPZ65R019 PG-TO247-4 ipz65r019c7 smd mosfet 400v
    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R019C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R019C7 1Description PG-TO247-4


    Original     		650VCoolMOSTMC7PowerTransistor IPZ65R019C7 IPZ65R019C7 PG-TO247-4 65C7019 IPZ65R019 PG-TO247-4 smd mosfet 400v PDF

    65c7045

    Abstract: IPZ65R045C7 SMD qf
    Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS C7 650VCoolMOS™C7PowerTransistor IPZ65R045C7 DataSheet Rev.2.0 Final PowerManagement&Multimarket 650VCoolMOS™C7PowerTransistor IPZ65R045C7 1Description PG-TO247-4


    Original     		650VCoolMOSTMC7PowerTransistor IPZ65R045C7 IPZ65R045C7 PG-TO247-4 65c7045 SMD qf PDF

    CNR-10D201K

    Abstract: cnr10d361k CNR-10D361K CNR10D201K CNR MOV fultec GR-1089 P500-G200-WH P850-G120-WH
    Contextual Info: PL IA NT CO M *R oH S Features Applications • Formerly ■ POTS linecards ■ ■ VolP equipment brand Extremely high speed performance Blocks high voltages and currents Two TBU protectors in one small package Simple, superior circuit protection Minimal PCB area


    Original     		P500-G P850-G P850-G CNR-10D361K GNR10D361K GSD2004S-V MMBD2004S FU0801 CNR-10D201K cnr10d361k CNR-10D361K CNR10D201K CNR MOV fultec GR-1089 P500-G200-WH P850-G120-WH PDF