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    3N06 Search Results

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    onsemi FQD13N06LTM

    The FQD13N06LTM is a 60V 11A N-Channel enhancement mode QFET® power MOSFET designed for low on-state resistance and superior switching performance.
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    Master Electronics FQD13N06LTM 6,600
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    Amphenol PCD A850497823N06

    Backshell - Env-EMI/RFI - Electroless Nickel Plated
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    Master Electronics A850497823N06 17
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    Amphenol PCD M85049/78-23N06

    Backshell - Env-EMI/RFI - Electroless Nickel Plated
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    Master Electronics M85049/78-23N06 17
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    Amphenol PCD M85049/1823N06

    Backshell - Env-EMI/RFI - Electroless Nickel Plated
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    Master Electronics M85049/1823N06
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    Interstate Connecting Components M85049/1823N06
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    onsemi UJ3N065080K3S

    Silicon Carbide (SiC) JFET - EliteSiC 80 mohm 650V TO-247-3L
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    Avnet Americas UJ3N065080K3S Tube 1,200 21 Weeks 30
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    Newark UJ3N065080K3S Bulk 613 1
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    3N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    13N06

    Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
    Contextual Info: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6


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    me4n20me4n20-fme8n06eo-252+143n06eme13noge-fme4p06me4p06-fme8p06me8p06-f13n068n0613n06e13-n0613n04n20ldo25smd marking qta PDF

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipb77n06s3-09ipi77n06s3-09ipp77n06s3-09pg-to263-3-2+9pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-887153n0609smd diode marking 77marking code r smd diodetransistor smd marking code agsmd marking asf PDF

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    ipb80n06s3l-06ipi80n06s3l-06ipp80n06s3l-06pg-to263-3-2+9pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-880043n06l06marking code r smd diodesmd marking code transistortransistor smd marking code agipi80n06s3l06 PDF

    Contextual Info: 3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


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    mmdf3n06vlmmdf3n06vl/d PDF

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Contextual Info: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipd50n06s3l-08pg-to252-3-113n06l08g51 smd+3anps071egd15-03n06l PDF

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Contextual Info: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    ipb25n06s3-25ipi25n06s3-25ipp25n06s3-25pg-to263-3-2+4pg-to262-3-1pg-to220-3-13n0625anps071e PDF

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Contextual Info: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    ipb80n06s3-07ipi80n06s3-07ipp80n06s3-07pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n0607anps071ed100004 PDF

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Contextual Info: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    ipb45n06s3-16ipi45n06s3-16ipp45n06s3-16pg-to263-3-2+6pg-to262-3-1pg-to220-3-13n0616smd diode code f45anps071emarking code d23 smd PDF

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    ipb80n06s3l-05ipi80n06s3l-05ipp80n06s3l-05pg-to263-3-2+7pg-to262-3-1pg-to220-3-13n06l05smd marking g23anps071ed1053smd marking code g23 PDF

    PG-TDSON-8-4

    Abstract: 3N06L23 3n06l IPG20N06S3L-23
    Contextual Info: IPG20N06S3L-23 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipg20n06s3l-233n06l23pg-tdson-8-43n06l PDF

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Contextual Info: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipd50n06s3l-06pg-to252-3-113n06l06anps071e PDF

    3N0607

    Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
    Contextual Info: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipd50n06s3-07pg-to252-3-113n0607anps071e PDF

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    ipb80n06s3l-06ipi80n06s3l-06ipp80n06s3l-06pg-to263-3-2+5pg-to262-3-1pg-to220-3-13n06l06ipi80n06s3l06anps071e PDF

    Contextual Info: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 24.8 25 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipb25n06s3-25ipi25n06s3-25ipp25n06s3-25eia/jesd22-a114-b+3pg-to263-3-2pg-to262-3-1pg-to220-3-1 PDF

    N06CL

    Abstract: 3N06C diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12
    Contextual Info: 3N06CLE, 3N06CLESM, 3N06CLE Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs July 1999 File Number 3948.5 Features • 0.30A, 60V [ /Title • rDS ON = 6.0Ω (RLD0 These are intelligent monolithic power circuits which


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    rld03n06clerld03n06clesmrlp03n06cle150oc+83n06crld03n06cldiode esm 182mosfet 60v 210a03n06ctb334742e-12 PDF

    3N0607

    Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
    Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1


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    ipi80n06s3-07ipp80n06s3-07ipb80n06s3-073n0607+5bipp80n06s3-07anps071ediode 7387smd diode code 102ac4 09 smd marking code PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


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    dl135/dapr-2001r14525dld601+10e3p102t2-955ve6n02t9n10edl1351086vl1n06c24 v dc relay 34.51.7d3n0320n06hl PDF

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    ipb80n06s3l-08ipi80n06s3l-08ipp80n06s3l-08pg-to263-3-2+10pg-to262-3-1pg-to220-3-1eia/jesd22-a114-bsp0000-88128diode d29 -083n06l08d29 -08d29 08marking code r smd diodetransistor smd marking code ag PDF

    4n03

    Abstract: 1N04 BA 1N11
    Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs 概 要 AK5730 はDCエラー検出用SAR ADC内蔵の4チャンネルのA/Dコンバータです。ラインマイク入力に 対応し、マイクアレイアプリケーションに最適です。TDMオーディオフォーマットによりDSPと接続


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    ak573065vrms100dbms1577-j-02+34n031n04ba 1n11 PDF

    smd diode code F45

    Abstract: marking code D23 smd Diode smd code f45 3N0616 IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2
    Contextual Info: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 15.4 45 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipb45n06s3-16ipi45n06s3-16ipp45n06s3-16pg-to263-3-2+7pg-to262-3-1pg-to220-3-1sp0001-022243n0616smd diode code f45marking code d23 smddiode smd code f45 PDF

    PG-TDSON-8-4

    Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-23 Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    ipg20n06s3l-233n06l23pg-tdson-8-4 PDF

    3N06L05

    Abstract: SMD MARKING CODE g23
    Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    ipb80n06s3l-05ipi80n06s3l-05ipp80n06s3l-05pg-to263-3-2+4pg-to262-3-1pg-to220-3-13n06l05smd marking code g23 PDF

    THB11

    Abstract: 4N06
    Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to


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    ak573065vrms100db48khz+3ms1577-e-02thb114n06 PDF

    MMDF3N06VL

    Abstract: MMDF3N06VLR2
    Contextual Info: 3N06VL Product Preview Power MOSFET 3 Amps, 60 Volts N–Channel SO–8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


    Original
    mmdf3n06vlr14525mmdf3n06vl/dmmdf3n06vlr2 PDF