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    3N06 Search Results

    3N06 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge SK03N06L
    Shikues Semiconductor N-Type 60V, RDS(ON)≦75mΩ@VGS=10V, ID≦3.5A, BV≧60V, tPot≦1.4W, SOT-89. Original PDF
    badge SL3N06
    SLKOR N-Channel Power MOSFET, BVDSS 60V, VGS +20V, IDR 3A, IDRM 10A, PD 1380mW, RΘJA 90°C/W, TJ, Tstg -55 to +150°C. Original PDF
    badge EM03N06FX
    ETEK Original PDF
    badge HSS3N06
    Huashuo Semiconductor N-Ch 60V Fast Switching MOSFET with 75 mOhm RDS(ON) at VGS = 10V, 3.2A continuous drain current, low gate charge, and high cell density trench technology for efficient small power switching applications. Original PDF
    SF Impression Pixel

    3N06 Price and Stock

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    Vishay Intertechnologies SUD23N06-31-T4-GE3

    MOSFET N-CH 60V 21.4A TO252
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    SUD23N06-31-T4-GE3 Cut Tape 2,470 1
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    Avnet Americas SUD23N06-31-T4-GE3 Tape & Reel 20 Weeks 2,500
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    onsemi NVBG023N065M3S

    SIC MOS D2PAK-7L 23MOHM 650V M3S
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    Richardson RFPD NVBG023N065M3S 800 1
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    Infineon Technologies AG IPD033N06NATMA1

    MOSFET N-CH 60V 90A TO252-3
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    Rochester Electronics IPD033N06NATMA1 5,855 1
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    EBV Elektronik IPD033N06NATMA1 27 Weeks 2,500
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    Infineon Technologies AG IPB013N06NF2SATMA1

    TRENCH 40<-<100V
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    IPB013N06NF2SATMA1 Tape & Reel 800 800
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    Mouser Electronics IPB013N06NF2SATMA1 1,264
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    Rutronik IPB013N06NF2SATMA1 Tape & Reel 850 800
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    EBV Elektronik IPB013N06NF2SATMA1 19 Weeks 800
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    TDK Electronics B65813N0630A048

    FERRITE CORE RM 630NH N48 2PCS
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    DigiKey B65813N0630A048 Box 842 1
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    3N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    13N06

    Abstract: 8N06 13N06E 13-N06 13n0 4N20 ldo25 3N06E smd marking QTA me4n20
    Contextual Info: SELECTOR GUIDE Products Type Case Style + TO-25 1 ID 4 ME4N20 ME4N20-F* 4 ME6NlO MEGNlO-F* 6 ME8N06E ME8NOGE-F* 8 ME1 3N06E ME13NOGE-F* 13 VDSS RDS(on w 63 -d i ~ ~ ~ 4 PD w9 Page 0.7 20 4 100 0.25 20 8 60 0.15 20 12 60 0.12 1.75 ’ Ta=25OC I 16 60 0.6


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    ME4N20 ME4N20-F* ME8N06E O-252* 3N06E ME13NOGE-F* ME4P06 ME4P06-F* ME8P06 ME8P06-F* 13N06 8N06 13N06E 13-N06 13n0 4N20 ldo25 smd marking QTA PDF

    3N0609

    Abstract: smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf
    Contextual Info: IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 8.8 mΩ ID 77 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB77N06S3-09 IPI77N06S3-09, IPP77N06S3-09 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88715 3N0609 smd diode marking 77 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 PG-TO263-3-2 SP0000-88715 SMD MARKING Asf PDF

    3N06L06

    Abstract: marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06
    Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88004 3N06L06 marking CODE R SMD DIODE SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 SP0000-88004 IPI80N06S3L06 PDF

    Contextual Info: 3N06VL Power MOSFET 3 Amps, 60 Volts N−Channel SO−8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


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    MMDF3N06VL MMDF3N06VL/D PDF

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Contextual Info: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L PDF

    3N0625

    Abstract: ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2
    Contextual Info: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 24.8 ID 25 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0625 IPI25N06S3-25 3N0625 ANPS071E IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 PG-TO263-3-2 PDF

    3N0607

    Abstract: IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004
    Contextual Info: IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 6.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0607 IPI80N06S3-07 3N0607 IPP80N06S3-07 ANPS071E IPB80N06S3-07 IPI80N06S3-07 PG-TO263-3-2 D100004 PDF

    smd diode code F45

    Abstract: ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd
    Contextual Info: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V DS 55 R DS on ,max (SMD version) 15.4 ID 45 V mΩ A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N0616 IPI45N06S3-16 smd diode code F45 ANPS071E IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 marking code D23 smd PDF

    3N06L05

    Abstract: smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23
    Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L05 IPI80N06S3L-05 3N06L05 smd marking g23 ANPS071E IPB80N06S3L-05 IPI80N06S3L-05 IPP80N06S3L-05 PG-TO263-3-2 D1053 SMD MARKING CODE g23 PDF

    PG-TDSON-8-4

    Abstract: 3N06L23 3n06l IPG20N06S3L-23
    Contextual Info: IPG20N06S3L-23 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 3N06L23 3n06l IPG20N06S3L-23 PDF

    3N06L06

    Abstract: ANPS071E IPD50N06S3L-06 PG-TO252-3-11
    Contextual Info: IPD50N06S3L-06 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.0 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPD50N06S3L-06 PG-TO252-3-11 3N06L06 3N06L06 ANPS071E IPD50N06S3L-06 PG-TO252-3-11 PDF

    3N0607

    Abstract: ANPS071E IPD50N06S3-07 PG-TO252-3-11
    Contextual Info: IPD50N06S3-07 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 6.9 mΩ ID 50 A Features • N-channel - Normal Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPD50N06S3-07 PG-TO252-3-11 3N0607 3N0607 ANPS071E IPD50N06S3-07 PG-TO252-3-11 PDF

    3N06L06

    Abstract: IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2
    Contextual Info: IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


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    IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L06 IPI80N06S3L-06 3N06L06 IPI80N06S3L06 ANPS071E IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 PG-TO263-3-2 PDF

    Contextual Info: IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 24.8 25 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 EIA/JESD22-A114-B PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI25N06S3-25 PDF

    N06CL

    Abstract: 3N06C diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12
    Contextual Info: 3N06CLE, 3N06CLESM, 3N06CLE Data Sheet 0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs July 1999 File Number 3948.5 Features • 0.30A, 60V [ /Title • rDS ON = 6.0Ω (RLD0 These are intelligent monolithic power circuits which


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    RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE 150oC 3N06C RLD03 N06CL diode ESM 182 MOSFET 60V 210A 03N06C RLD03N06CLE RLD03N06CLESM RLP03N06CLE TB334 742E-12 PDF

    3N0607

    Abstract: ANPS071E IPB80N06S3-07 IPI80N06S3-07 IPP80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code
    Contextual Info: Target data sheet OptiMOS -T Power-Transistor Feature • n-Channel • Enhancement mode • AEC Q101 qualified • Low On-Resistance RDS on IPI80N06S3-07 IPP80N06S3-07,IPB80N06S3-07 Product Summary VDS 55 V RDS(on) max. SMD version 6.5 mΩ ID 80 A P- TO262 -3-1


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    IPI80N06S3-07 IPP80N06S3-07 IPB80N06S3-07 IPP80N06S3-07 3N0607 BIPP80N06S3-07, 3N0607 ANPS071E IPB80N06S3-07 IPI80N06S3-07 DIODE 7387 smd diode code 102a c4 09 smd marking code PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


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    DL135/D Apr-2001 r14525 DLD601 E3P102 T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl PDF

    DIODE D29 -08

    Abstract: 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2
    Contextual Info: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 EIA/JESD22-A114-B SP0000-88128 DIODE D29 -08 3N06L08 D29 -08 d29 08 marking CODE R SMD DIODE TRANSISTOR SMD MARKING CODE ag IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 PDF

    4n03

    Abstract: 1N04 BA 1N11
    Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs 概 要 AK5730 はDCエラー検出用SAR ADC内蔵の4チャンネルのA/Dコンバータです。ラインマイク入力に 対応し、マイクアレイアプリケーションに最適です。TDMオーディオフォーマットによりDSPと接続


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    AK5730] AK5730 65Vrms, 100dB MS1577-J-02 4n03 1N04 BA 1N11 PDF

    smd diode code F45

    Abstract: marking code D23 smd Diode smd code f45 3N0616 IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2
    Contextual Info: IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T Power-Transistor Product Summary Features V DS • N-channel - Enhancement mode 55 R DS on ,max (SMD version) • Automotive AEC Q101 qualified ID 15.4 45 V mΩ A • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02224 3N0616 smd diode code F45 marking code D23 smd Diode smd code f45 3N0616 IPB45N06S3-16 IPI45N06S3-16 IPP45N06S3-16 PG-TO263-3-2 PDF

    PG-TDSON-8-4

    Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPG20N06S3L-23 Product Summary V DS 55 V R DS on ,max5) 23 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode P-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    IPG20N06S3L-23 3N06L23 PG-TDSON-8-4 PDF

    3N06L05

    Abstract: SMD MARKING CODE g23
    Contextual Info: IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.5 mΩ ID 80 A • MSL1 up to 260°C peak reflow


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    IPB80N06S3L-05 IPI80N06S3L-05, IPP80N06S3L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPI80N06S3L-05 PG-TO263-3-2 3N06L05 SMD MARKING CODE g23 PDF

    THB11

    Abstract: 4N06
    Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to


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    AK5730] AK5730 AK5730 65Vrms, 100dB 48kHz MS1577-E-02 THB11 4N06 PDF

    MMDF3N06VL

    Abstract: MMDF3N06VLR2
    Contextual Info: 3N06VL Product Preview Power MOSFET 3 Amps, 60 Volts N–Channel SO–8, Dual Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and


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    MMDF3N06VL r14525 MMDF3N06VL/D MMDF3N06VL MMDF3N06VLR2 PDF