4N03 Search Results

4N03L06

Abstract: smd diode 77a IPD50N03S4L-06 PG-TO252-3-11
Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mΩ ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)

4N03L09

Abstract: IPD30N03S4L-09 4n03L 4n03 PG-TO252-3-11 C2565 DIODE smd marking 52A
Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N03L03

Abstract: ANPS071E IPD90N03S4L-03 PG-TO252-3-11
Contextual Info: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N03L04

Abstract: ANPS071E IPD70N03S4L-04 PG-TO252-3-11
Contextual Info: IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 4.3 mΩ ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N03L03

Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

FRO 021

Abstract: 1A08 IEC60286-3 503480-1200 SD-50348 5d503480001
Contextual Info: S u r\>,n> °oL> ou» U REVISED > 1.0 > o o EC NO: J2011-0537 m D R W N :S H I RATA 2010/10/12 2010/10/12 2010/10/13 C H 'K D :K T A K A H A S H I A P P R :K M O R I KAWA > —n > -N p - m co m o D E S C R IP T IO N > o 002 m L on ; 02 o : o ?t |K?tr Ô

4N03L03

Abstract: 4n03l02 IPB80N03S4L-02 4n03L
Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N03L06

Abstract: IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a
Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mW ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)

IPD40N03S4L-08

Abstract: PG-TO252-3-11 D1042 4n03L D40A
Contextual Info: IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 8.3 mW ID 40 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to

4N03L04

Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1

RT8207MZQW

Abstract: RT8207M RT8207LZQW RT8207MZQW QFN
Contextual Info: RT8207L/M Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller General Description Features The RT8207L/M provides a complete power supply for both DDRII/DDRIII/Low-Power DDRIII/DDRIV memory systems. It integrates a synchronous PWM buck controller with a

4n03

Abstract: 1N04 BA 1N11
Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs 概 要 AK5730 はDCエラー検出用SAR ADC内蔵の4チャンネルのA/Dコンバータです。ラインマイク入力に 対応し、マイクアレイアプリケーションに最適です。TDMオーディオフォーマットによりDSPと接続

4N03L04

Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified

4N03L09

Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4n03l02

Abstract: IPD90N03S4L-02 4n03
Contextual Info: IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 2.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N035

Abstract: ZXM64N035G ZXM64N035GTA ZXM64N035GTC DS 37A
Contextual Info: 4N035G 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 35V: RDS(on) = 0.050 : ID = 6.7A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: ZXM 4N035L3 35V N-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS = 35V: RDS(on) = 0.060 : ID = 13A DESCRIPTION This new generation of high cell density planar M OSFETs from Zetex utilises a unique structure that com bines the benefits of low on-resistance w ith fast sw itching speed. This

THB11

Abstract: 4N06
Contextual Info: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to

ANPS071E

Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow

Contextual Info: RT8207L/M Complete DDRII/DDRIII/Low-Power DDRIII/DDRIV Memory Power Supply Controller General Description Features The RT8207L/M provides a complete power supply for both DDRII/DDRIII/Low-Power DDRIII/DDRIV memory systems. It integrates a synchronous PWM buck controller with a

4N03L03

Abstract: IPD90N03S4L-03 PG-TO252-3-11 4n03
Contextual Info: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3.3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature

4N035

Abstract: transistor ZXM64N035L3 ZXM64N035L3
Contextual Info: 4N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = 35V: RDS(on) = 0.060 : ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This

4N03L08

Abstract: IPD40N03S4L-08 PG-TO252-3-11 D40A
Contextual Info: IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 8.3 mΩ ID 40 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature