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    4N03L09

    Abstract: IPD30N03S4L-09 4n03L 4n03 PG-TO252-3-11 C2565 DIODE smd marking 52A
    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd30n03s4l-09pg-to252-3-114n03l094n03l+34n03c2565diode smd marking 52a PDF

    4N03L09

    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd30n03s4l-09pg-to252-3-114n03l09 PDF

    iec 320 C-15 pinout

    Abstract: IPD30N03S4L-09 PG-TO252-3-11
    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		ipd30n03s4l-09pg-to252-3-114n03l09iec 320 c-15 pinout PDF