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    4N03L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC034N03LSGATMA1

    MOSFET N-CH 30V 22A/100A TDSON
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    DigiKey () BSC034N03LSGATMA1 Cut Tape 4,984 1
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    BSC034N03LSGATMA1 Digi-Reel 4,984 1
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    BSC034N03LSGATMA1 Reel 5,000
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    Mouser Electronics BSC034N03LSGATMA1 8,037
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    TME BSC034N03LSGATMA1 1
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    Chip Stock BSC034N03LSGATMA1 11,500
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    EBV Elektronik BSC034N03LSGATMA1 27 Weeks 5,000
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    Maritex BSC034N03LSGATMA1 4,500 1
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    Win Source Electronics BSC034N03LSGATMA1 9,010
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    Infineon Technologies AG IPT004N03LATMA1

    MOSFET N-CH 30V 300A 8HSOF
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    DigiKey () IPT004N03LATMA1 Digi-Reel 2,581 1
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    IPT004N03LATMA1 Cut Tape 2,581 1
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    IPT004N03LATMA1 Reel 2,000 2,000
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    Avnet Americas () IPT004N03LATMA1 Ammo Pack 1
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    IPT004N03LATMA1 Reel 20 Weeks 2,000
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    Mouser Electronics IPT004N03LATMA1 7,137
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    Newark () IPT004N03LATMA1 Cut Tape 1,370 1
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    IPT004N03LATMA1 Reel 2,000
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    Bristol Electronics IPT004N03LATMA1 37
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    Rochester Electronics IPT004N03LATMA1 56,597 1
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    TME IPT004N03LATMA1 1
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    Chip One Stop IPT004N03LATMA1 Cut Tape 1,773 0 Weeks, 1 Days 1
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    EBV Elektronik IPT004N03LATMA1 2,000 21 Weeks 2,000
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    New Advantage Corporation IPT004N03LATMA1 2,000 1
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    Infineon Technologies AG IPDH4N03LAG

    MOSFET N-CH 25V 90A TO252-3
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    DigiKey IPDH4N03LAG Cut Tape 2,387 1
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    Rochester Electronics IPDH4N03LAG 4,380 1
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    Infineon Technologies AG IPP044N03LF2SAKSA1

    MOSFET N-CH 30V 70A TO220-3
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    DigiKey IPP044N03LF2SAKSA1 Tube 672 1
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    Avnet Americas IPP044N03LF2SAKSA1 Tube 1,000 16 Weeks 1
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    Mouser Electronics IPP044N03LF2SAKSA1 1,991
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    Newark IPP044N03LF2SAKSA1 Bulk 1,814 1
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    Rutronik IPP044N03LF2SAKSA1 Reel 1,000 1,000
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    Infineon Technologies AG IPD04N03LB-G

    MOSFET N-CH 30V 50A TO252-3
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    DigiKey () IPD04N03LB-G Reel
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    IPD04N03LB-G Cut Tape
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    IPD04N03LB-G Digi-Reel 1
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    • 100 $0.89
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    Find more 4N03L price and stock on Findchips.com

    4N03L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    4N03L06

    Abstract: smd diode 77a IPD50N03S4L-06 PG-TO252-3-11
    Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mΩ ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 smd diode 77a IPD50N03S4L-06 PG-TO252-3-11 PDF

    4N03L09

    Abstract: IPD30N03S4L-09 4n03L 4n03 PG-TO252-3-11 C2565 DIODE smd marking 52A
    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N03S4L-09 PG-TO252-3-11 4N03L09 4N03L09 IPD30N03S4L-09 4n03L 4n03 PG-TO252-3-11 C2565 DIODE smd marking 52A PDF

    4N03L03

    Abstract: ANPS071E IPD90N03S4L-03 PG-TO252-3-11
    Contextual Info: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N03S4L-03 PG-TO252-3-11 4N03L03 4N03L03 ANPS071E IPD90N03S4L-03 PG-TO252-3-11 PDF

    4N03L04

    Abstract: ANPS071E IPD70N03S4L-04 PG-TO252-3-11
    Contextual Info: IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 4.3 mΩ ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD70N03S4L-04 PG-TO252-3-11 4N03L04 4N03L04 ANPS071E IPD70N03S4L-04 PG-TO252-3-11 PDF

    4N03L03

    Abstract: 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd
    Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L02 IPI80N03S4L-03 4N03L03 4N03L02 IPI80N03S4L-03 IPP80N03S4L-03 ANPS071E IPB80N03S4L-02 PG-TO263-3-2 C25 smd PDF

    4N03L03

    Abstract: 4n03l02 IPB80N03S4L-02 4n03L
    Contextual Info: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-03 PG-TO263-3-2 4N03L03 4n03l02 4n03L PDF

    4N03L06

    Abstract: IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a
    Contextual Info: IPD50N03S4L-06 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 5.5 mW ID 50 A PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD50N03S4L-06 PG-TO252-3-11 4N03L06 4N03L06 IPD50N03S4L-06 PG-TO252-3-11 J2009 smd diode 77a PDF

    IPD40N03S4L-08

    Abstract: PG-TO252-3-11 D1042 4n03L D40A
    Contextual Info: IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 8.3 mW ID 40 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD40N03S4L-08 PG-TO252-3-11 4N03L08 IPD40N03S4L-08 PG-TO252-3-11 D1042 4n03L D40A PDF

    4N03L04

    Abstract: IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03
    Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max (SMD version) 3.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPB80N03S4L-03 IPI80N03S4L-04 IPP80N03S4L-04 PG-TO263-3-2 4N03L03 4n03 PDF

    4N03L04

    Abstract: IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2
    Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L03 IPI80N03S4L-04 4N03L04 IPI80N03S4L-04 4N03L03 AG SMD TRANSISTOR DIODE smd marking Ag ANPS071E IPB80N03S4L-03 IPP80N03S4L-04 PG-TO263-3-2 PDF

    4N03L04

    Abstract: IPD70N03S4L-04 4n03
    Contextual Info: IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 4.3 mΩ ID 70 A Features • N-channel - Enhancement mode PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD70N03S4L-04 PG-TO252-3-11 4N03L04 4N03L04 IPD70N03S4L-04 4n03 PDF

    4N03L09

    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N03S4L-09 PG-TO252-3-11 PG-TO252-3-11 4N03L09 4N03L09 PDF

    4n03l02

    Abstract: IPD90N03S4L-02 4n03
    Contextual Info: IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 2.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N03S4L-02 PG-TO252-3-11 4N03L02 4n03l02 IPD90N03S4L-02 4n03 PDF

    ANPS071E

    Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
    Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03 PDF

    4N03L08

    Abstract: IPD40N03S4L-08 PG-TO252-3-11 D40A
    Contextual Info: IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 8.3 mΩ ID 40 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD40N03S4L-08 PG-TO252-3-11 4N03L08 4N03L08 IPD40N03S4L-08 PG-TO252-3-11 D40A PDF

    4n03l02

    Abstract: IPD90N03S4L-02 DS-18 ANPS071E PG-TO252-3-11
    Contextual Info: IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 2.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD90N03S4L-02 PG-TO252-3-11 4N03L02 4n03l02 IPD90N03S4L-02 DS-18 ANPS071E PG-TO252-3-11 PDF

    PG-TO263-7-3

    Abstract: 4N03L01 IPB180N03S4L-01 4n03L PG-TO263-7 4n03
    Contextual Info: IPB180N03S4L-01 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on 1.05 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPB180N03S4L-01 PG-TO263-7-3 4N03L01 PG-TO263-7-3 4N03L01 IPB180N03S4L-01 4n03L PG-TO263-7 4n03 PDF

    4N03L02

    Abstract: 4n03
    Contextual Info: IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 2.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD90N03S4L-02 PG-TO252-3-11 4N03L02 4N03L02 4n03 PDF

    4N03L03

    Contextual Info: IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 3 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)


    Original     		IPD90N03S4L-03 PG-TO252-3-11 4N03L03 4N03L03 PDF

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Contextual Info: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03 PDF

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Contextual Info: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 PDF

    iec 320 C-15 pinout

    Abstract: IPD30N03S4L-09 PG-TO252-3-11
    Contextual Info: IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on ,max 9.0 mW ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N03S4L-09 PG-TO252-3-11 4N03L09 iec 320 C-15 pinout IPD30N03S4L-09 PG-TO252-3-11 PDF

    4N03LH0

    Abstract: PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R
    Contextual Info: IPB180N03S4L-H0 OptiMOS -T2 Power-Transistor Product Summary V DS 30 V R DS on 0.95 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant)


    Original     		IPB180N03S4L-H0 PG-TO263-7-3 4N03LH0 4N03LH0 PG-TO263-7-3 IPB180N03S4L-H0 4n03 smd marking E R PDF

    4N03L14

    Abstract: IPD30N03S4L-14 A3350 4n03
    Contextual Info: IPD30N03S4L-14 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max V 13.6 ID mΩ 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPD30N03S4L-14 PG-TO252-3-11 4N03L14 4N03L14 IPD30N03S4L-14 A3350 4n03 PDF