IPI80N03S4L-04, Search Results
IPI80N03S4L-04, Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI80N03S4L-04 |
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Single: N-Channel 30V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.6 mOhm; ID (max): 80.0 A; RthJC (max): 1.6 K/W; | Original | 189.07KB | 9 | ||
| IPI80N03S4L04AKSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 80A TO262-3 | Original | 162.46KB |
IPI80N03S4L-04, Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPI80N03S4L-04Power Field-Effect Transistor, 80A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI80N03S4L-04 | 374 | 1 |
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