IDP30E120 Search Results

IDB30E120

Abstract: IDP30E120
Contextual Info: IDB30E120 Target IDP30E120 Fast Switching EmCon Diode A • 1200V EmCon technology • fast recovery • soft switching • low reverse recovery charge • low forward voltage ® C C C A C A TO 263 Type IDB30E120 VRRM IF VF Tj 1200V 30A 1.8 V 150°C IDP30E120

D30E120

Abstract: IDP30E120 IDB30E120
Contextual Info: IDP30E120 IDB30E120 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 1200 V IF 30 A VF 1.65 V Tjmax 150 °C VRRM
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO220-3.SMD
Low forward voltage

D30E120

Abstract: IDP30E120 IDB30E120
Contextual Info: IDP30E120 IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.

W138

Abstract: D30E120
Contextual Info: IDP30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage C • Easy paralleling

D30E120

Abstract: Diode smd code 30a IDP30E120 IEC61249-2-21 fast recovery diode 1200v SMD
Contextual Info: IDP30E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant

D30E120

Contextual Info: IDP30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO220-2-2. • Low forward voltage • Easy paralleling

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

igbt welding machine scheme

Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and

D30E120

Abstract: IDB30E120 IDP30E120 PG-TO263-3-2 850a
Contextual Info: IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling

Contextual Info: IDB30E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling

PX3544

Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly

h30r120

Abstract: H30R IHW30N120R
Contextual Info: IHW30N120R q Soft Switching Series IGBT with monolithic body diode for soft switching Applications Features: • Powerful monolithic Body Diode • Specified for TJmax = 175°C • Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution

h30r120

Abstract: H30R1 NH2C 00855
Contextual Info: IHW30N120R q Soft Switching Series IGBT with monolithic body diode for soft switching Applications Features: • Powerful monolithic Body Diode • Specified for TJmax = 175°C • TrenchStop and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution

600V igbt dc to dc buck converter

Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!

Contextual Info: IDB30E120 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage