DIODE RG 39 Search Results

1SV147

Abstract: toshiba lable information
Contextual Info: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage

NDF10N60ZG

Abstract: NDF10N60ZH NDF10N60Z
Contextual Info: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

Si7374DP

Abstract: si7374 52604
Contextual Info: Si7374DP New Product Vishay Siliconix N-Channel 30–V D–S MOSFET with Schottky Diode PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0055 at VGS = 10 V 24 0.0066 at VGS = 4.5 V 24 VDS (V) 30 FEATURES D TrenchFETr PowerMOSFET D 100 % Rg Tested Qg (Typ) APPLICATIONS

SI4823DY

Contextual Info: New Product Si4823DY Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)d 0.108 at VGS = - 4.5 V - 4.1 0.175 at VGS = - 2.5 V - 3.3 Qg (Typ.) 4 nC • LITTLE FOOT Plus Schottky • 100 % Rg Tested

Contextual Info: • International H Rectifier 4655452 DGlt.755 ‘m INTERNATIONAL RECTIFIER *INR b5E » SERIES IRK.F102 FAST SCR I DIODE and SCR / SCR INT-A-PAK Power Modules Features F a st tu rn -o ff th yristo r F a s t re c o v e ry d io d e H igh s u rg e c a p a b ility

Rx51

Contextual Info: SIL31 250A : Outline Drawings GEIUERAL-USE RECTIFIER DIODE Features • H ig h reverse v o lta g e c a p a b ility • X £ y K '<—XWi S tu d m o u n te d • f f l j i * : A p p lic a tio n s • B attery c h a rg e rs B ru sh -le ss g e n e ra to rs

Contextual Info: I I Bulletin 127092 rev. A 09/97 International I0 R Rectifier IRK.F132. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 130 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

Contextual Info: I I Bulletin 127097 rev. A 09/97 International I0 R Rectifier IRK.F102. s e rie s FAST THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 105 A • F a s t tu rn -o ff th y ris to r ■ F a s t re c o v e ry d io d e ■ H ig h s u rg e c a p a b ility

ERG51

Abstract: SIG01
Contextual Info: ERG51 ,SIG01 30A — is a m m ? 4 *— k B i n s t a : Outline Drawings Units mm GENERAL-USE RECTIFIER DIODE • 4 $ £ I Features • - 7 i'B 's J - " / '? Glass passivated c h ip • H ig h n o n -re p e titiv e peak reverse v o lta g e {VRSM) H ig h s u rg e c u rre n t ca p a b ility

KA2 DIODE

Abstract: DT 7130 IC rc 3150 IRKT 180
Contextual Info: International S Rectifier s e r ie s ir k .fis o FAST SCR I DIODE and SCR / SCR MAGN-A-pak Power Modules Features • ■ ■ I ■ F a st tu rn -o ff th yristo r F a st re c o v e ry d io d e H igh s u rg e c a p a b ility E le c tric a lly is o la te d b a s e p la te

D-68623

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

Contextual Info: FII 50-12E NPT3 IGBT phaseleg IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.0 V in ISOPLUS i4-PACTM 3 5 4 1 1 5 2 Features Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

CM75MX-24A

Contextual Info: CM75MX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

Contextual Info: CM100MX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 100 Amperes/600 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

marking 43a

Abstract: marking code 43a IRFH5207TR2PBF IRFH5207TRPBF AN-1154 IRFH5207
Contextual Info: PD -96298 IRFH5207PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 75 V 9.6 mΩ Qg (typical) RG (typical) 39 nC 1.7 Ω ID 71 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

CM35MX-24A

Contextual Info: CM35MX-24A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

Contextual Info: CM75MX-12A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 NX-Series CIB Module (3Ø Converter + 3Ø Inverter + Brake) 75 Amperes/600 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

PQFN footprint

Abstract: diode marking 33a on semiconductor IRFH5210TR2PBF marking 33a on semiconductor AN-1154 IRFH5210TRPBF IRFH5210
Contextual Info: PD - 97490 IRFH5210PbF HEXFET Power MOSFET VDS RDS on max (@VGS = 10V) 100 V 14.9 mΩ Qg (typical) RG (typical) 39 nC 1.8 Ω ID 55 A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors

Contextual Info: CM35MX-24A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 (3Ø Converter + 3Ø Inverter + Brake) 35 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

Contextual Info: CM50MX-24A NX-Series CIB Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 (3Ø Converter + 3Ø Inverter + Brake) 50 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31

IRFP244

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements

IRFP240

Abstract: irfp240pbf
Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

IRFP240

Abstract: paralleling SiHFP240 sihfp240-e3
Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

IRF840LCL

Abstract: IRF840 IRF840LCS SiHF840LC SiHF840LCL SiHF840LCL-E3 SiHF840LCS SiHF840LCS-E3
Contextual Info: IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve