221AH Search Results

ndf02n60zg

Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

TS20100CG

Abstract: ntsj20100ctg ntsj2010 ntsj20100 NTSB20100CT
Contextual Info: NTST20100CT, NTSB20100CT-1G, NTSJ20100CTG, NTSB20100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.50 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low

NDF05N50ZG

Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Contextual Info: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

B10H150G

Contextual Info: MBRJ10H150CTG Product Preview SWITCHMODE Power Rectifier 150 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 150 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total 5 A Per Diode Leg

B30L45G

Abstract: B30L45
Contextual Info: MBRJ30L45CTG Product Preview SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits • • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity

B2045G

Abstract: B2045G AKA
Contextual Info: MBRJ2045CTG Product Preview SWITCHMODE Power Rectifier Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

Contextual Info: MBRJ30L60CTG Product Preview SWITCHMODE Power Rectifier 60 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 30 A Total 15 A Per Diode Leg

Contextual Info: NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

b30h60g

Contextual Info: MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG http://onsemi.com SWITCHMODE Power Rectifier 60 V, 30 A SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS 1 2, 4 Features and Benefits •        

B20H100G

Abstract: B20H100G aka B20H100 SCHOTTKY BARRIER RECTIFIER aka B20H100G
Contextual Info: MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, MBRJ20H100CTG, NRVBB20H100CTT4G SWITCHMODE Power Rectifier 100 V, 20 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS Features and Benefits •      1 Low Forward Voltage: 0.64 V @ 125C

Contextual Info: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary

Contextual Info: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDD03N80Z-1G

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX

R01US0032EJ

Contextual Info: User’s Manual 32 Cover RX63T Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

Contextual Info: NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS

Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

NDD03N60Z

Contextual Info: NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

TP-128

Contextual Info: Features DATASHEET RX63T Group Renesas MCUs R01DS0087EJ0200 Rev.2.00 Mar 11, 2013 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, Two 12-bit ADCs three S/H circuits, double data registers, amplifier, comparator , one 10-bit ADC, simultaneous sampling on 7 channels using three ADCs, 100 MHz PWM (2 three-phase complementary channels + 4 single-phase

Contextual Info: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com

TS30100CG

Contextual Info: NTST30100CT, NTSB30100CT-1G, NTSJ30100CTG, NTSB30100CTG Very Low Forward Voltage Trench-based Schottky Rectifier http://onsemi.com PIN CONNECTIONS 1 Exceptionally Low VF = 0.455 V at IF = 5 A 2, 4 3 Features • Fine Lithography Trench−based Schottky Technology for Very Low

369AA

Contextual Info: NDD03N80Z, NDF03N80Z N-Channel Power MOSFET 800 V, 4.5 W Features • • • • ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V BR DSS RDS(ON) MAX

NDF06N60ZG

Abstract: 221D-03
Contextual Info: NDF06N60Z N-Channel Power MOSFET 600 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A

SCHOTTKY BARRIER RECTIFIER aka

Contextual Info: NTST40120CT, NTSJ40120CTG, NTSB40120CT-1G, NTSB40120CTG, NTSB40120CTT4G http://onsemi.com Very Low Forward Voltage Trench-based Schottky Rectifier VERY LOW FORWARD VOLTAGE, LOW LEAKAGE SCHOTTKY BARRIER RECTIFIERS 40 AMPERES, 120 VOLTS Exceptionally Low VF = 0.43 V at IF = 5 A