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    Vishay Intertechnologies

    Vishay Intertechnologies SI4334DY-T1-GE3

    MOSFETs 30V 14.8A 5.2W 13.5mohm @ 10V
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    Vishay Intertechnologies SI4334DY-T1-E3

    MOSFETs 30V 14.8A 5.2W
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    SI4334DY Datasheets Context Search

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    74253

    Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)


    Original     		Si4334DY Si4334DY-T1-E3 08-Apr-05 74253 PDF

    74253

    Abstract: SI4334DY 9.1b diode 61222
    Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)


    Original     		Si4334DY Si4334DY-T1-E3 18-Jul-08 74253 9.1b diode 61222 PDF

    74253

    Abstract: Si4334DY-T1-E3 si4334
    Contextual Info: Si4334DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4334DY Si4334DY-T1-E3 Si4334DY-T1-GE3 18-Jul-08 74253 si4334 PDF

    AN609

    Contextual Info: Si4334DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4334DY AN609 14-Mar-07 PDF