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    74253

    Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)


    Original     		si4334dysi4334dy-t1-e308-apr-0574253 PDF

    74253

    Abstract: SI4334DY 9.1b diode 61222
    Contextual Info: Si4334DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 Qg (Typ)


    Original     		si4334dysi4334dy-t1-e318-jul-0874253+29.1b diode61222 PDF

    74253

    Abstract: Si4334DY-T1-E3 si4334
    Contextual Info: Si4334DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0135 at VGS = 10 V 14.8 0.016 at VGS = 4.5 V 13.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		si4334dysi4334dy-t1-e3si4334dy-t1-ge318-jul-08+274253si4334 PDF

    AN609

    Contextual Info: Si4334DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		si4334dyan60914-mar-07 PDF