DIODE NC Search Results

diode A25

Abstract: 75N80
Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series

diode MARKING A3

Abstract: A3 DIODE A3 marking diode WBFBP-03D
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4448LLD03 - WBFBP-03D SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. NC 3. CATHODE FEATURES Fast Switching Speed

Schottky diode TO220

Abstract: DIODE 200A 600V schottky D05S60 diode schottky 600v Q67040S4644 SDT05S60 D05S
Contextual Info: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery

d06s60

Abstract: diode schottky 600v T-1228 SDB06S60 SDP06S60 smd diode marking code UJ
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

Schottky diode TO220

Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery

D06S60

Abstract: Q67040-S4370 P-TO263-3-2 T-1228 SDB06S60 SDP06S60 smd schottky diode marking 6a
Contextual Info: SDB06S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 21 nC • No reverse recovery

DW84C2V4NND03-DW84C39NND03

Abstract: Jiangsu Changjiang Electronics Technology
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Diode - WBFBP-03B DW84C2V4NND03-DW84C39NND03 1.2x1.2×0.5 ZENER DIODE DESCRIPTION Epitaxial planar type Silicon diode TOP + 1. ANODE - 2. NC, 3.CATHODE FEATURES: z Ultra-Small Surface Mount Package

Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for

diode T3 Marking

Abstract: marking T3 t3 diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE WBFBP-03D DK21LLD03 SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. NC 3. CATHODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

5d surface mount diode

Abstract: SWITCHING DIODE 5D marking 5D diode free diode diode marking 5D DK914LLD03 diode 5d marking 5d 5d surface diode
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE WBFBP-03D DK914LLD03 SWITCHING DIODE TOP 1.0x1.0×0.5 unit: mm DESCRIPTION Epitaxial planar Silicon diode + - 1. ANODE 2. NC 3.CATHODE FEATURES Fast Switching Speed Ultra-Small Surface Mount Package

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet  production data Description A K K K A TO-220AC STPSC8H065D K A NC D²PAK STPSC8H065G-TR K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Nd-yag

Contextual Info: SIEMENS SFH 483401 SPH 483406 GaAlAs-LASER DIODE 1000 mW WITH FC-CONNECTOR 750 wWM Package Dimensions in mm SFH 483401 40" 1 2 3 4. SFH 483406 . 11 7 NC NTC NTC Laserdiode Cathode 5 6 7 8 "I Laserdiode Anode Monitor Diode Anode Monitor Diode Cathode N.C J

Solar Charge Controller

Abstract: 48V 100W zener diode 14v 10A mosfet solar controller FDB3632 solar panel controller p channel mosfet 100v Solar Charge Controller Circuit SMAT70A solar panel 5v
Contextual Info: LTC4357 Positive High Voltage Ideal Diode Controller FEATURES DESCRIPTION n The LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace a Schottky diode. When used in diode-OR and high current diode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.

6R1MBi100P

Abstract: 1600V 100a igbt
Contextual Info: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

Contextual Info: 6R1MBi75P-160 Diode Module Diode Module with Brake Diode:1600V / 75A, IGBT:1400A/50A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier

ad130

Abstract: D1103 d1105 MMAD1109 AD1107
Contextual Info: MOTOROLA Order this document by MMAD130/D SEMICONDUCTOR TECHNICAL DATA M onolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high-current, fast-switching

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC10H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure

Contextual Info: STPSC8H065 650 V power Schottky silicon carbide diode Datasheet − production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure