D12S60C
Abstract: IDH12S60C JESD22 uc1020
Contextual Info: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
idh12s60cpg-to220-2d12s60cjesd22+1uc1020
|
PDF
|
D12S60C
Abstract: IDT12S60 R600 IDT12S60C
Contextual Info: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
idt12s60cpg-to220-2-2d12s60cidt12s60+1r600
|
PDF
|
|
Contextual Info: IDT12S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 30 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 12 A • Temperature independent switching behavior I F @ T C < 100 °C
|
Original
|
idt12s60cpg-to220-2-220ma2 |
PDF
|
D12S60C
Abstract: d12s60 PG-TO220 IDT12S60C JESD22
Contextual Info: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
idt12s60cpg-to220-2-2d12s60cd12s60+2pg-to220jesd22
|
PDF
|
IDH12S60C
Abstract: d12s60 D12S60C
Contextual Info: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior
|
Original
|
idh12s60cpg-to220-2d12s60cd12s60 |
PDF
|
D12S60C
Abstract: pg-to220-2-2 IDT12S60C JESD22
Contextual Info: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
|
Original
|
idt12s60cpg-to220-2-2d12s60cjesd22 |
PDF
|
|
Contextual Info: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior
|
Original
|
idh12s60cpg-to220-2d12s60c |
PDF
|