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    D08S60 Price and Stock

    Samtec Inc

    Samtec Inc HCMD-08-S-60.00-02-S

    Cable Assembly Ribbon 1.524m 16 POS IDC HDR - Bulk (Alt: HCMD-08-S-60.00-02-S)
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    Avnet Americas HCMD-08-S-60.00-02-S Bulk 1 Weeks, 6 Days 1
    • 1 $19.54
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    Mouser Electronics HCMD-08-S-60.00-02-S
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    Sager HCMD-08-S-60.00-02-S 1
    • 1 $22.10
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    Master Electronics HCMD-08-S-60.00-02-S
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    Samtec Inc IDMD-08-S-60.00-ST4

    - Bulk (Alt: IDMD-08-S-60.00-ST4)
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    Avnet Americas IDMD-08-S-60.00-ST4 Bulk 2 Weeks 1
    • 1 $17.71
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    Mouser Electronics IDMD-08-S-60.00-ST4
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    Sager IDMD-08-S-60.00-ST4 1
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    Master Electronics IDMD-08-S-60.00-ST4
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    Samtec Inc HCSD-08-S-60.00-01-N

    - Bulk (Alt: HCSD-08-S-60.00-01-N)
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    Avnet Americas HCSD-08-S-60.00-01-N Bulk 1 Weeks, 3 Days 1
    • 1 $16.34
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    Mouser Electronics HCSD-08-S-60.00-01-N
    • 1 $16.29
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    Sager HCSD-08-S-60.00-01-N 1
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    Master Electronics HCSD-08-S-60.00-01-N
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    • 100 $12.29
    • 1000 $8.20
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    Samtec Inc IDSD-08-S-60.00-G-ST2

    Cable Assembly Flat Ribbon 28AWG 1.5m 16 Position IDC Connector Receptacle - Bulk (Alt: IDSD-08-S-60.00-G-ST2)
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    Avnet Americas IDSD-08-S-60.00-G-ST2 Bulk 2 Weeks 1
    • 1 $16.57
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    Mouser Electronics IDSD-08-S-60.00-G-ST2
    • 1 $16.57
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    Sager IDSD-08-S-60.00-G-ST2 1
    • 1 $16.57
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    • 100 $12.06
    • 1000 $10.83
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    Samtec Inc FFMD-08-S-60.00-01-SR

    - Bulk (Alt: FFMD-08-S-60.00-01-SR)
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    Avnet Americas FFMD-08-S-60.00-01-SR Bulk 2 Weeks, 4 Days 1
    • 1 $16.23
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    Mouser Electronics FFMD-08-S-60.00-01-SR
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    Sager FFMD-08-S-60.00-01-SR 1
    • 1 $16.24
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    TME FFMD-08-S-60.00-01-SR 1
    • 1 $18.04
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    Find more D08S60 price and stock on Findchips.com

    D08S60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IDT08S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark QC 19 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 8 A • Temperature independent switching behavior I F @ T C < 100 °C


    Original     		idt08s60cpg-to220-2-220ma2 PDF

    D08S60C

    Abstract: IDH08S60C JESD22
    Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idh08s60cpg-to220-2d08s60cjesd22 PDF

    Contextual Info: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		idt08s60cpg-to220-2-2d08s60c PDF

    D08S60C

    Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idh08s60cpg-to220-2d08s60c PDF

    d08s60

    Abstract: diode 8a 600v
    Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		sdt08s60pg-to220-2-2q67040s4647d08s60+1diode 8a 600v PDF

    D08S60C

    Abstract: IDT08S60C JESD22 D08S60 D08S
    Contextual Info: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		idt08s60cpg-to220-2-2d08s60cjesd22+2d08s60d08s PDF

    D08S60C

    Abstract: IDT08S60C JESD22
    Contextual Info: IDT08S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide V DC 600 V • Switching behavior benchmark Qc 19 nC • No reverse recovery/ No forward recovery IF 8 A • No temperature influence on the switching behavior


    Original     		idt08s60cpg-to220-2-2d08s60cjesd22 PDF

    Schottky diode TO220

    Abstract: Q67040S4647 SDT08S60 D08S60
    Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		sdt08s60pg-to220-2-2d08s60q67040s4647+2pg-to-220-2-2schottky diode to220 PDF

    Schottky diode TO220

    Abstract: SDT08S60 6260 thermal infineon 6260 Single Schottky diode TO-220 Q67040S4647
    Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		sdt08s60p-to220-2-2d08s60q67040s4647+4schottky diode to2206260 thermalinfineon 6260single schottky diode to-220 PDF

    Contextual Info: IDH08S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 19 nC IF 8 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		idh08s60cpg-to220-2d08s60c PDF

    Contextual Info: SDT08S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 24 nC • No reverse recovery


    Original     		sdt08s60pg-to220-2-2q67040s4647d08s60 PDF