DIODE MARKING A3 Search Results

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage

VPS05178

Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Contextual Info: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

A4 marking diode

Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
Contextual Info: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

marking u1s SOT-143

Abstract: VPS05178 chip Marking 3A3
Contextual Info: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol

4C3 diode

Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Contextual Info: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3
Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R

VPS05604

Abstract: DIODE A3 C4 marking diode A4 marking diode diode marking a4 A4 SOT363 switch marking A3 A3 DIODE diode MARKING A3 marking 5a3
Contextual Info: BAT 18-04S Silicon PIN Diode Preliminary data 4 5
Low-loss VHF / UHF switch above 10 MHz 6
PIN diode with low forward resistance 2 3 1 C1/A2 C3 A4 6 5 4 D2 D1 VPS05604 D4 D3 1 2 3 A1 C2 A3/C4 EHA07464 Type Marking BAT 18-04S AVs Pin Configuration Package

BAR99

Abstract: a388 Q62702-A388
Contextual Info: Silicon Switching Diode ● BAR 99 For high-speed switching Type Marking Ordering Code tape and reel BAR 99 JGs Q62702-A388 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 70 V Peak reverse voltage VRM 70

BAT62-08S

Abstract: VPS05604
Contextual Info: BAT62-08S Silicon Schottky Diode Array Preliminary data 4
Low barrier diode for detectors up to GHz 5 6 frequencies 2 Tape loading orientation Top View 654 Marking on SOT-363 package for example W1s corresponds to pin 1 of device C1 C2 C3 6 5 4 3 1 VPS05604

MMBD501

Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Contextual Info: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2

Contextual Info: "T" OZ'-O' Silicon Switching Diode 3EE D • BAR 99 Ö23b320 GOlbM^M ö M S IP SIEMENS/ SPCLt SEMICONDS • For high-speed switching Type Marking BAR 99 JG Ordering code for versions in bulk Q62702-A610 Ordering code for versions on 8 mm-tape Q62702-A388

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage LBAS20HT1G Switching Diode 1 z We declare that the material of product compliance with RoHS requirements. 2 SOD– 323 1 CATHODE Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes RS1006D1 SOD-123 FAST RECOVERY DIODE FEATURES z High Frequency Rectification z Surface Mount Package Ideally Suited for Automatic Insertion MARKING: R6D MAXIMUM RATINGS Ta=25℃ unless otherwise noted

Contextual Info: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G • We declare that the material of product 1 compliance with RoHS requirements. 2 CASE 477, STYLE 1 SOD– 323 ORDERING INFORMATION Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel LBAS21HT3G

a3202

Abstract: marking codes A32
Contextual Info: ERA32 1.0A ( 100 to 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability Voltage class Applications Cathode mark 70 Lot No.

Contextual Info: ERA32 1.0A ( 100 to 200V / 1.0A ) Outline drawings, mm FAST RECOVERY DIODE ø3.0 ø0.8 5.0 28 MIN. Features 28 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability Voltage class Applications Maximum ratings and characteristics

VPS05604

Contextual Info: BAS 16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

BAS16S

Abstract: VPS05604 4C3 diode
Contextual Info: BAS16S Silicon Switching Diode Array 4
For high-speed switching applications 5 6
Internal galvanic isolated diodes in one package Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 C2

Contextual Info: Connection Diagram 1401A 1403A 3 3 3 3 A29 1 2 1 1 2 1404A 2NC 2 1 3 3 1405A MARKING SOT-23 MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 2 1 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings * TA = 25°C unless otherwise noted

aajf

Contextual Info: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications

Contextual Info: 32E D • 023^350 OQlbSbl ö « S I P Silicon Switching Diode Array B A W 101 S I E M E N S / SPCL-, S E M I C O N D S _ • Electrically Isolated high-voltage medlum-speed diodes Type Marking BAW 101 JP Ordering code for versions In bulk Q62702-A3444

C2C36

Abstract: VPW09197 BAS21U SC74
Contextual Info: BAS21U Silicon Switching Diode Array 5 4 6
For high-speed switching applications
Internal galvanic isolated diodes 3 2 in one package 1 VPW09197 C1 C2 C3 6 5 4 1 2 3 A1 A2 A3 EHA07291 Type BAS21U Marking Pin Configuration Package JSs 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74

marking 6c1

Abstract: BAS16U SC74
Contextual Info: BAS16U Silicon Switching Diode Array 5
For high-speed switching applications 4 6
Internal galvanic isolated diodes in one package 3 C1 C2 C3 6 5 4 2 1 VPW09197 1 2 3 A1 A2 A3 EHA07291 Type Marking BAS16U A6s Pin Configuration Package 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SC74