DIODE M79 Search Results

diode D07-15

Abstract: diode d07 1N3605 DIODE 1N4087 1N9148 2N2222 chip 1N4532 1N814 D07 15 DIODE 1N3605
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPFS SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification

PNP Transistor 2N2222 equivalent

Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Contextual Info: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

m79hg

Contextual Info: MIVR 52149/52174 M79HG 79HG REPLACEMENT BASIC TEST CIRCUIT ADJUSTABLE OUTPUT VOLTAGE FEATURES • • • • • • • Mr NEGATIVI ADJUSTABLE 5-AMP VOLTAGE REGULATOR 5.0 A Output Current Internal Current and Thermal Overload Protection Internal Short Circuit Current Limit

Contextual Info: MIVR 52149/52174 M79HG NEGATIVE ADJUSTABLE 5-AMP VOLTAGE REGULATOR 79HG REPLACEMENT BASIC TEST CIRCUIT ADJUSTABLE OUTPUT VOLTAGE FEATURES • • • • • • • 5.0 A Output Current Internal Current and Thermal Overload Protection Internal Short Circuit Current Limit

DC motor speed control circuit with SCR

Abstract: scr speed control dc motor wiring diagram slip ring motor scr dc motor speed control thyrector diode thyrector wiring diagram, variable speed drives scr DC MOTOR SPEED CONTROLLER ac motor speed control circuit diagram with scr thyrector catalog
Contextual Info: B U L L E T IN Regulated Speed Drives V z -V t -V a -V s -V i^ A A -V / i HP • Series A Construction Drive Ratings IMPORTANT These instructions should be studied by the personnel in­ stalling and operating the equipment BEFORE initial mo­ tor start. Keep the Instruction Sheet for future reference.

M1-0412SE

Abstract: Magnum Microwave mixer m80lc watkins-johnson Mixer magnum microwave MM94MS-3 MW90PG-30 M1-0420ME WATKINS JOHNSON WATKINS m89c
Contextual Info: High Performance Broadband Mixers Spectrum Microwave’s hybrid mixer product line formerly Magnum Microwave covers frequency ranges from 0.5 MHz to 26.5 GHz Available in many industry standard surface mount, drop-in and connectorized housings, these mixers

Mixer Output IP3 41 dBm

Abstract: DOUBLE FET HUD-19SH fets in balanced mixers BK377 HJK-19H HJK-21H TTT167 balun diode mixer M79277
Contextual Info: Novel Passive FET Mixers Provide Superior Dynamic Range The dual-double-balanced configuration of these FET mixers helps to improve dynamic range with reduced conversion loss and noise figure without expending DC bias. Engineering Department Mini-Circuits, P.O. Box 350166, Brooklyn, NY 11235; 718 934-4500, FAX: (718) 332-4661, Internet:

APM2679C

Contextual Info: APM2679C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A, RDS ON =42mΩ (typ.) @ VGS=-4.5V RDS(ON)=52mΩ (typ.) @ VGS=-2.7V RDS(ON)=55mΩ (typ.) @ VGS=-2.5V • • • Super High Dense Cell Design Top View of SOT-23-6 Reliable and Rugged

MOSFET P SOT-23-6

Abstract: APM2679C STD-020C APM2679 sot-23-6 marking am
Contextual Info: APM2679C P-Channel Enhancement Mode MOSFET Pin Description Features • -20V/-4A , D • • Reliable and Rugged • Lead Free Available RoHS Compliant D D G Super High Dense Cell Design Top View of SOT-23-6 (4 )S Applications • D S RDS(ON)=42mΩ(typ.) @ VGS=-4.5V

SS321 equivalent

Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
Contextual Info: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4

RSN 312 H 24

Abstract: ic RSN 315 H 42 RSN 315 H 42 RSN 312 RSN 312 H 42 rsn 313 bc 574 transistor AM7905 TRANSISTOR 7905A 79M574
Contextual Info: FVellmlnaiy H Am79M57/Am79M571 /Am79M574 Metering Subscriber Line Interface Circuit Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ P ro g ra m m a b le c o n s ta n t re s is tan c e feed L in e-feed c h a ra c te ris tic s in d e p e n d e n t of

2N2219 transistor substitute

Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A

beta transistor 2N2222

Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Contextual Info: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V

MS27212

Abstract: MIL-T-55155 D1277B MS25036-102 MS25435 MS27429 MS20659-126 MIL-T-16366 M81824 MIL-T-15659
Contextual Info: MIL-STD-l277B 28 December 1983 SUPERSEDING MIL-S- D-1277A 22 Ju’y 1970 MILITARY STANDARD SPLICES, TERMINALS, TERMINAL BINDING POSTS, TERMINAL JUNCTION SYSTEMS, WIRE CAPS; ELECTRICAL BOARDS, MIL-STD-1277B I EPARTMENTOF I)EF13NSI: WASI{INGTON. D.C. ‘20301

IN7100

Abstract: henderson, bert wj mixer m1 wescon mixer
Contextual Info: Predicting Intermodulation Suppression In Double-Balanced Mixers Author: Bert C. Henderson P r e d ic tin g in te r m o d u la tio n IM s u p ­ p ression in d ou ble-balanced (D B) m ixers co n tin u es to be extrem ely im p o rtan t in the d esig n and o p eratio n o f m icrow av e

2N3417 equivalent

Abstract: 2N2221-2N2222 2N2222A npn transistor transistor 2n5174 IC TC 3588 beta transistor 2N2222 1n9148 2N4424 2N4424 equivalent 2N3416 equivalent
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA rap GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA PNP NPN pnp GET3014 GET3S3B GET3638A GET3638 GET3638A

beta transistor 2N2222

Abstract: 1N4532 1n9148 2N2926 equivalent 2n RF transistor 2N5249 2N6006 DIODE 1N3605 2N4424 equivalent 2N6002
Contextual Info: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 GET3S3B GET3638A 2NSOOO 2N6001 2N6003 2N6000 2N6002 2N60D2 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003

2N3638 equivalent

Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810
Contextual Info: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813

watkins-johnson Mixer

Abstract: wj m79c watkins-johnson Mixer m6d wj m88c
Contextual Info: FREQUENCY MIXERS ♦ ♦ ♦ ♦ ♦ DC TO 24 GHz HIGH PERFORMANCE WIDEBAND OPERATION GUARANTEED SPECIFICATIONS HI-REL SCREENING AVAILABLE Description: Watkins-Johnson provides a full line of high performance mixers covering frequency ranges as low as 10 kHz to 12 MHz and as broadband as 1

MCA-35LH

Abstract: MCA-50LH M79277
Contextual Info: Low Cost, Triple Balanced, LTCC Mixer Introduction Double balanced Mixers are used widely in frequency translation applications. Some of the advantages of the double balanced mixer are good L-R and L-I isolation and moderate R-I isolation. Triple Balanced Mixers also called Double-doubly balanced mixers have

Contextual Info: Cj r c I 3-TERM INAL NEGATIVE VOLTAGE REGULATOR NJM79L00 The NJM79L00 series of 3-Terminal Negative Voltage Regulators is constructed using the New JRC Planar epitaxial process. These regulators employ internal current-limiting and thermal-shutdown, making them essentially indestructible.

79L05

Abstract: m79l09
Contextual Info: NJM79L00 3 -TERM IHAL NEGATIVE VOLTAGE REGULATOR • PACKAGE OUTLINE ■ GENERAL DESCRIPTION The NJM79LOO series o f 3-Terminal N egative V oltage Regulators is constructed using the N ew JRC Planar epitaxial process. T hese regu­ lators em ploy internal current-limiting and thermal-shutdown, making