DIODE EQUIVALENT 1N60 Search Results

1N60P

Abstract: 20PF
Contextual Info: ST 60 P SILICON SCHOTTKY BARRIER DIODE Silicon Schottky Barrier Diode Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. max. 1.90 Cathode M ark m ax. 0.520 Glass case JEDEC DO-35 Dimensions in mm

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

LL60P

Abstract: 1N60P 20PF
Contextual Info: ST LL60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Reverse Voltage dc VR 20 V Peak Reverse Voltage

1N60P

Abstract: 20pf
Contextual Info: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc

20pf

Abstract: 1N60P
Contextual Info: ST 60P SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to or better than 1N60P ideal for used in detection or for switching on the radio, TV, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 45 V Reverse Voltage dc

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

ST60P

Abstract: 20pf 1N60P 1N60S
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm

1N60P

Abstract: ST60P 1N60S 20PF
Contextual Info: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1

1N5988B

Abstract: 1N6006B 1N5994B 1N5995B 1N6020B
Contextual Info: 1N5985B-1 thru 1N6031B-1 Available on commercial versions Axial-Leaded 500 mW Zener Diodes Screening in reference to MIL-PRF-19500 available DESCRIPTION The popular 1N5985B-1 thru 1N6031B-1 series of 0.5 watt Zener voltage regulators provides a selection from 2.4 to 200 volts in 10%, 5%, 2% and 1% tolerances. These axial-leaded, glass,

DIODE SD51

Abstract: 12v zener diode JEDEC 1N SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

1NU7

Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Contextual Info: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l

mll34 footprint

Abstract: SOD80 footprint DO-213AA 1N5985 1N5985UR 1N6031 BZV55 MLL5985 1N6009BUR
Contextual Info: 1N5985UR thru 1N6031BUR or MLL5985 thru MLL6031B Surface Mount 500 mW Zener Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N5985UR thru 1N6031BUR (or MLL5985 thru MLL6031B) series of 0.5 watt Zener Voltage Regulators provides selection from 2.4 to 200 volts in

zener diode nomenclature

Abstract: T4-LDS-0228 bzx55 sod80
Contextual Info: 1N5985BUR-1 thru 1N6031BUR-1 Available on commercial versions Surface Mount 500 mW Zener Diodes Screening in reference to MIL-PRF-19500 available DESCRIPTION The popular 1N5985BUR-1 thru 1N6031BUR-1 series of 0.5 watt Zener voltage regulators provides a selection from 2.4 to 200 volts in 10%, 5%, 2% and 1% tolerances. These glass

SOD80 footprint

Abstract: DO-213AA 1N5985 1N5985UR-1 1N6031 BZV55 MIL-PRF19500 MLL5985-1
Contextual Info: 1N5985UR-1 thru 1N6031BUR-1 or MLL5985-1 thru MLL6031B-1 METALLURGICALLY BONDED GLASS SURFACE MOUNT 500 mW Zener Diodes SCOTTSDALE DIVISION APPEARANCE The popular 1N5985UR-1 thru 1N6031BUR-1 (or MLL5985-1 thru MLL6031B-1) series of 0.5 watt Zener Voltage Regulators provides selection from 2.4 to 200

Contextual Info: 3VD182600YL 3VD182600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified

Contextual Info: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

Diode Equivalent 1N60

Contextual Info: 3VD186600YL 3VD186600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. 1 3 1-Gate PAD 3-Source PAD ¾ Advanced termination scheme to provide enhanced voltageblocking capability.

cq 636 g diode

Abstract: DUAL PRE-AMPLIFIER FOR TAPE RECORDER TA7658P 1n60 toshiba 1s1555 diode Diode Equivalent 1N60 silicon diode 1S1555 Germanium audio Amplifier diagram transistor audio preamplifier circuit diagram PRE-AMPLIFIER FOR TAPE RECORDER
Contextual Info: DUAL PREAMPLIFIER FOR TAPE RECORDER Unit in mm The TA7658P is a dual preamplifier with ALC Automatic Level Control designed for use in a record/playback amplifier of tape recorder. It is suitable for a stereo set and a radio­ cassette recorder. . DIP 14 PIN (Dual In-Line Package)

Contextual Info: 3VD212600YL 3VD212600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD212600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon 3 epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltageblocking capability.

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

JAN1N4148

Abstract: JANS1N4148 JANS1N4148-1 JANS1N6642 DO35 JAN1N4148-1 MIL-PRF19500 Three bond harry ALL DIODE Equivalent list
Contextual Info: Spring/Summer 1998 All You Ever Wanted to know about Metallurgical Bonds by Harry Spence requiring a metallurgical bond for the very metallurgy techniques. Commonly molded popular JAN1N4148 types. There was and pressed parts are bronze bearings or much discussion about what constituted a

Diode Equivalent 1N60

Abstract: diode 1n60 1N60 MOS 1N60
Contextual Info: 3VD169600YL 3VD169600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD169600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced

Contextual Info: 3VD173600YL 3VD173600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD173600YL is a 600V High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced