1N6098 Search Results

DIODE SD51

Abstract: 12v zener diode JEDEC 1N SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: 1N6097 thru 1N6098R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF AV = 50 A Features • High Surge Capability • Types from 30 V to 40V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode.

1N6097

Abstract: 1N6098 175PART
Contextual Info: Transys 1N6097 R THRU 1N6098(R) Electronics L I M I T E D SCHOTTKY DIODES STUD TYPE 50 A Features 50Amp Rectifier 20-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

1N6097

Contextual Info: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

1N6098

Abstract: solitron devices 1N6097 solitron
Contextual Info: SOLITRON DEV IC ES INC 8368602 "flb SOLITRON DEVICES INC PE I fl3>fllaD5 DQ053b3 4 8 6 D “Ô 2 3 6 3 ~ ^ D ~ r - Ô 7 - SCHOTTKY RECTIFIERS 1N6097 1N6098 Solitron DEVICES, INC. POWER SCH OTTKY RECTIFIERS 50 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING

1n8098

Contextual Info: 1N6097 1N6098 POWER SCHOTTKY RECTIFIERS 50 Amp, 30 and 40 Volts DESCRIPTION Unitrode's series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high conductivity design, using a heavy copper top post and 4 point crimp, ensures cool

1N6098

Abstract: 1N609 1N6097 40HFL40S02 DO-203AB IRFP460 diode 2329
Contextual Info: Bulletin PD-2.329 rev. B 11/02 1N6097 1N6098 50 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics The 1N609. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary

Contextual Info: DIGITRON SEMICONDUCTORS 1N6097-1N6098 50 AMP SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol Parameter Value TSTG Storage temperature range -65 to +150°C TJ Operating junction temperature range -65 to +150°C RθJC Maximum thermal resistance 1.0°C/W junction to Case

Contextual Info: POWER SCHOTTKY RECTIFIERS 1N6097 1N6098 50 Amp, 30 and 40 Volts DESCRIPTION Microsemi’s series o f Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Microsemi high conductivity design, using a heavy copper top post and 4 point crimp, ensures cool

Contextual Info: 1N6097 thru 1N6098R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF = 50 A Features • High Surge Capability • Types up to 40V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

Contextual Info: 1N6097 thru 1N6098 50 Amps Schottky Rectifiers 1N6097 1N6098 Working peak reverse voltage 30V 40V Repttitive peak reverse voltage 30V 40V * Schottky barrier rectifier * 150 OC junction temperature * Guard ring protection * Reverse energy tested Electrical Characteristics

1N6097(R)

Contextual Info: 1N6097 R DACO SEMICONDUCTOR CO., LTD. 1N6098(R) SCHOTTKY DIODE MODULE TYPE S 50A Features 50Amp Rectifier 30~40 Volts High Surge Capability Types Up to 40 V VRRM Maximum Ratings DO- 5 (DO-203AB) M J Operating Temperature: -55 C to +150 Storage Temperature: -55 C to +150

IN6098

Abstract: IN6097 1N6097 1N6098
Contextual Info: 1N6097 1N6098 POWER SCHOTTKY RECTIFIERS 50 Amp, 30 and 40 Volts D ESCRIPTION Unitrode's series of Schottky barrier power rectifiers is ideally suited for output rectifiers and catch diodes in low voltage power supplies. The Unitrode high conductivity design, using a heavy copper top post and 4 point crimp, ensures cool

Contextual Info: 1N6097 R THRU 1N6098(R) DACO SEMICONDUCTOR CO., LTD. SCHOTTKY DIODES STUD TYPE 50 A Features 50Amp Rectifier 30-40 Volts High Surge Capability Types up to 40V V RRM DO-5 Maximum Ratings B Operating Temperature: -65 C to +150 N Storage Temperature: -65 C to +175

DIODE SD51

Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Contextual Info: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: 1N6097 thru 1N6098R Silicon Power Schottky Diode VRRM = 30 V - 40 V IF = 50 A Features • High Surge Capability • Types up to 40V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified

1N609

Abstract: 1N6097 1N6098 40HFL40S02 DO-203AB IRFP460
Contextual Info: PD-2.329 rev. A 12/97 1N6097 1N6098 SCHOTTKY RECTIFIER 50 Amp Description/Features Major Ratings and Characteristics Characteristics 1N609. Units IF AV Rectangular 50* A 30/40* V IFSM @ 60Hz 800* A VF @ 160 Apk, TJ = 70 °C 0.86* V TJ range - 65 to 125* °C

NSD30

Contextual Info: 2848793 DIODES INCORPORATE TMD D 1 20407^3 OODGSb? ^ SCHOTTKY BARRIER RECTIFIERS diodes incorporated TYPE O P E R A T IN G T E M P E R A T U R E RAN GE 20 to 45V -65°C to +125°C 50 and 60V -65° C to +150° C S T O R A G E T E M P E R A T U R E RA N G E -65°C to +150°'

18CPQ100

Abstract: 50HQ050 18CPQ030 18CPQ040 18CPQ050 18CPQ060 18CPQ090 30CPQ030 30CPQ040 30CPQ050
Contextual Info: INTERNATIONAL RECTIFIER H E Schottky Rectifiers | 4flS5452 0010021 0 | -f-o'S-CL I 18 TO 60 AM PS Part Number ' f AV @ TC VRWM m (A) (°C) VFM 'h h ® T j = 125°C & •f m Rated VRW H (A) Max. T j (mA) <°C) Case Style T 0 -2 4 7 A A 18CPQ030 18CPQ040

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

INTEX

Abstract: D00033 1N5817 1N5818 1N5819 M25-400 super mole 1N5830
Contextual Info: INTEX/ SEMITRÔNICS CORP 000032^ 27E D h m semitron hot line o t -07 TOLL FREE NUMBER 800-777-3960 discrete devices SCHOTTKY BARRIER RECTIFIERS OPERATING AND STORACE TEMPERATURE «65»C to +1SO°C TYPE Maximum Peak Reverse Voltage Maximum Average Rectified Current

A1W TRANSISTOR

Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Contextual Info: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201

203CNQ100

Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Contextual Info: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060