DIODE E 7F Search Results

ESJC11-09

Abstract: lg magnetron esjc
Contextual Info: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

fr diode 205

Abstract: diode fr 207 TFK 450 B2 41880 A751
Contextual Info: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

Contextual Info: SAMYOJEMjÇOMDUCTOR C<W I 7fa DE|7T 7D7t - f 0002231 i) I * -— LED Light Emitting Diode 7997076 SANYO SEMICONDUCTOR CQRP u - i f F «F 76C 0 2 2 3 9 S DL-3020 L a s e r Diode T ^ V / - ¿>5" D S D L -3 0 2 0

Contextual Info: SANSHA ELECTRIC MFC CO SbE D 7T11243 DD0Q445 7flS M S E f l J DIODE MODULE DW F R 40A •Maximum Ratings It e m S ym bol D W F (R )4 0 A 3 0 D W F (R )4 0 A 4 0 U n it V rrm R e p e titive Peak Reverse V oltage 300 400 V V rsm N o n -R e p e titive Peak R everse V oltage

PPT Diode specifications

Abstract: 1 watt diode diode 4-1000 tubes 20 ampere diode
Contextual Info: 7K7 Syl vania Type DUODIODE HIGH-MU TRIODE o Separale Diode Cathode II IT 8BF-L-7 PHYSICAL SPECIFICATIONS B a s e . .L ock-In 8 Pin B u lb .

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS

Contextual Info: E R E 4 1 - 1 5 I3A IW U H ü O utline D ra w in g s FAST RECOVERY DIODE Features >K n n ftT V , D a m p e r dio d e fo r high definition T V and jtjv : M a rk in g high resolution display. waie-. & H ig h vo lta g e by m esa d e s ig n . - nvE41- 15 °.V

Contextual Info: v a y 7 -f /i Twin Diode Schottky Barrier Diode o u t l in e d i m e n s io n s D4SC6M Case : ITO-220 60V 4A • T jl5 C ÏC T l^yi/x U O i •P rrs m • 7 JlÆ -Jb K ffl & •S R *g •D C /D C H V A -î ? mmm. y - A . o a « ^ •JUS. rn i ï —$’ 7 lb m &

TRANSISTOR D405

Contextual Info: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.

ba4402

Contextual Info: Audio ICs FM front end | BA4402 / BA4404 T h e B A 4 4 0 2 and B A 4404 a re fro nt e n d ICs for FM rad io receivers. T h e s e d ev ic e s can be u sed in a w id e ran g e o f applications, from 3V portable radios to h om e stereo tuners. T he BA4402 and B A4404 consist of an RF amplifier, oscillator circuit, mixer circuit, and a variable capacitor-diode for

Contextual Info: P R E L IM IN A R Y D A T A S H E E T N O . P D -9 .7 9 3 International S Rectifier IRGBG30FD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast Speed Co-Pack IGBT • Latch-proof Vces = 6 0 0 V • Simple gate drive • High operating frequency

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

S10VB20

Contextual Info: SQ.I.P.3S Square In-line Package Bridge Diode O U T L IN E D IM E N S IO N S S10VBD : + ©: 600V 10A Plastic body with back Al heat transfer plate. -H • Unit ^ mm Weight ■ 8.5g - R A TIN G S A bsolute Maximum R atings m a, Item Symbol ~ mi . T yp e No.

D15XB60H

Contextual Info: -j'j v V ÿ 'C t - F î/y ^ n /'fy ^ 'fy M Bridge Diode Single In-line Package OUTLINE DIMENSIONS D15XB H SU 600V 15A ¡HSU •»süsiPA’y 'r - y •UL1SW UL File No,E 1 4 2 4 2 2 •/¡tS Ë ttU lM •S fÎJ E E x H I fsm («a± *nîEowcB, Mfcfem RATINGS

Contextual Info: Transistors UML2N Low-frequency Transistor I UML2N •F e a tu r e s 1 The 2SC2412K and a diode are housed independently in a UMT package. •A b s o lu te m aximum ratings Ta = 25'C) Tr Parameter Symbol Limits Unit VcBO VCEO V ebo ic V V V Pc 60 50 6 0.15

international rectifier NE 22

Contextual Info: Bulletin 12134 rev. B 11/97 International IGR Rectifier Series 20ETS.FP s a f e IR INPUT RECTIFIER DIODE TO-220 FULLPAK Description/Features VF < 1V @ 10A i 1 ’f s m = 300A VRRM800 to 1600V 1 The 20ETS.FP rectifier S A F E lR series has been optimized for very low forward voltage drop, with

Contextual Info: -j'j v V ÿ 'C t - F î/y ^ n /'fy ^ 'fy M Bridge Diode Single In-line Package • ^ ^ H l O U T L IN E D IM E N S IO N S Package : 3 S D3SBD ^ 800V 4A •»lÜ S IP A ’ s / ' r - y •UL1SW UL File No,E 14 242 2 Unit : mm («fiLtCDSâSEOLYCB:, }£EPtt«£C!B 18< fc'ÎU )

Contextual Info: E S A C 8 2 M - 0 4 1 0 A * ± 'h * a * - r 3 i— K ^ 3 ‘y h + — ^ x Y 7 ¥ ^ ^ t —K : Outline Drawings SCHOTTKY BARRIER DIODE : Features In su la ted packa g e by fu lly m o ld in g • “(SVf Low V F • • x -r n m Connection Diagram x e - F * * # * ta v .'

IMN11

Abstract: UMN1N FMN1
Contextual Info: Ultra High-Speed Switching Diode Array FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N •Features 1 Three or four diodes contained in sam e area as SMD3 and UMD3. 2)Can be mounted using automatic mounters. 3)AII diodes have the same characteristics.

Contextual Info: ¡ e l u o m Semiconductor, Inc. TC1066 ‘ Patent Pending ACPI-COMPLIANT SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ ■ ■ The TC1066 is a serially programmable temperature sensor optimized for monitoring modern high performance

Contextual Info: HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS S e m iconductor Data Sheet March 1999 25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120CND, HGTP5N120CND and HGT1S5N120CNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

TC1617

Contextual Info: • e l u o m Semiconductor, Inc. TCM1617 SMBus THERMAL SENSOR WITH EXTERNAL DIODE INPUT FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ The TCM1617 is a serially programmable temperature sensor optimized for monitoring modern high performance CPUs with on-board integrated thermal diodes. Tempera­

1SR124

Contextual Info: Diodes High-Speed Rectifier Diode 1SR124-400A •A pplications High speed rectification •E x te rn a l dimensions Units: mm •F e a tu re s 1)Glass sealed envelope (JEDEC: DO-41) 2)High speed ( tr r = 0 .4 /< s Max.) 3)High reliability Rectifier diodes