DIODE E 7F Search Results

pj 88 diode

Abstract: ERN26 L231 t930 30S3 ERN26-08 T151 T460 T760 T810
Contextual Info: E R N 2 6 4 ooa : Outline Drawings HIGH VO LTAG E FA S T R E C O V E R Y DIODE : Features • High voltage, high current • Diffused type • Flat package type : Applications Free-wheel diode for inverters and choppers • Others. Maximum Ratings and Characteristics

ESJC11-09

Abstract: lg magnetron esjc
Contextual Info: E S J C 1 1 9kV, 12kV : O utline D raw ings HIGH VOLTAGE SILICON DIODE E S JC 1 1 (i, E S J C 1 1 is high reliability and high current capability type resin molded high voltage silicon diode which is sealed a multilayed mesa type silicon chip by epoxy resin.

fr diode 205

Abstract: diode fr 207 TFK 450 B2 41880 A751
Contextual Info: 1N 41510 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Extrem schnelle Schalter Applications: Extrem fast switches Besondere Merkmale: • Kann als gütebestätigtes Bauelem ent g e lie fe rt werden Features: • Can be de live re d as "Q ualified semico n d ucto r d e v ic e “

Contextual Info: 'E t ir j'y v V ? * * - - K 3 Phase Bridge Diode Diode Module O U T L IN E D IM E N S IO N S S30VTQ/S30VTAD 800V 30A Unit • mm i pap ^ t : A 0 r> < H & l i ' - K J g ^ d lM A X X j il . e ) V t o • S30V T A type has solid wire lead term inals. 11MAXX ^ 1 .6 )

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

marking 4F

Abstract: 4FV diode DIODE 3FV 60 3fv 60 9p marking
Contextual Info: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C D FEATURES ・Small Package : TFSC ・Sharp Breakdown Characteristic. B A E MAXIMUM RATING Ta=25℃

4FV diode

Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
Contextual Info: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A

Contextual Info: SAMYOJEMjÇOMDUCTOR C<W I 7fa DE|7T 7D7t - f 0002231 i) I * -— LED Light Emitting Diode 7997076 SANYO SEMICONDUCTOR CQRP u - i f F «F 76C 0 2 2 3 9 S DL-3020 L a s e r Diode T ^ V / - ¿>5" D S D L -3 0 2 0

Contextual Info: SANSHA ELECTRIC MFC CO SbE D 7T11243 DD0Q445 7flS M S E f l J DIODE MODULE DW F R 40A •Maximum Ratings It e m S ym bol D W F (R )4 0 A 3 0 D W F (R )4 0 A 4 0 U n it V rrm R e p e titive Peak Reverse V oltage 300 400 V V rsm N o n -R e p e titive Peak R everse V oltage

103a1

Abstract: pin configuration of IC 74138 52380 74138 ic diagram 9A113 ic pin configuration 74138 Betatherm E16-1 MAX6698 MAX6698EE
Contextual Info: 19-3476; Rev 3; 8/07 KIT ATION EVALU E L B AVAILA 7-Channel Precision Remote-Diode, Thermistor, and Local Temperature Monitor Features The MAX6698 precision multichannel temperature sensor monitors its own temperature, the temperatures of three external diode-connected transistors, and the

PPT Diode specifications

Abstract: 1 watt diode diode 4-1000 tubes 20 ampere diode
Contextual Info: 7K7 Syl vania Type DUODIODE HIGH-MU TRIODE o Separale Diode Cathode II IT 8BF-L-7 PHYSICAL SPECIFICATIONS B a s e . .L ock-In 8 Pin B u lb .

Contextual Info: S i GEC PLESSEY S E M I C O N D U C T O R S DS4177-1.2 MDFB85 FAST RECOVERY DIODE APPLICATIONS • Freewheel Diode. ■ D.C. Motor Drives. KEY PARAM ETERS 4500V RRM 2130 A ! f AV 20000A FSM 2200|iC V ■ Welding. Q. ■ High Frequency Rectification. ■ 6.0|IS

Contextual Info: E R E 4 1 - 1 5 I3A IW U H ü O utline D ra w in g s FAST RECOVERY DIODE Features >K n n ftT V , D a m p e r dio d e fo r high definition T V and jtjv : M a rk in g high resolution display. waie-. & H ig h vo lta g e by m esa d e s ig n . - nvE41- 15 °.V

Contextual Info: v a y 7 -f /i Twin Diode Schottky Barrier Diode o u t l in e d i m e n s io n s D4SC6M Case : ITO-220 60V 4A • T jl5 C ÏC T l^yi/x U O i •P rrs m • 7 JlÆ -Jb K ffl & •S R *g •D C /D C H V A -î ? mmm. y - A . o a « ^ •JUS. rn i ï —$’ 7 lb m &

TRANSISTOR D405

Contextual Info: 2SD2170 2SC4574 Transistors Medium Power Transistor Motor or Relay drive I 2SD 2170 •A b s o lu te maximum ratings (Ta=25"C ) •F e a tu re s 1 2 3 4 5 6 ) ) ) ) ) ) Built-in zener diode between collector and base. Z ener diode has low dispersion. Strong protection against reverse pow er surges due to low loads.

Contextual Info: f O N E R e r CE720802 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Three-Phase SCR/DÌOd& Bridge Modules 20 Amperes/800 Volts Description: Powerex Three-Phase SCR/Diode Bridge Modules are designed for use in applications requiring vari­

F15NC15M

Abstract: f15nc15 SF15NC15M
Contextual Info: Schottky Barrier Diode Twin Diode Wtm OUTLINE SF15N C 1 5 M 150 V 15A Feature • Tj=150°C • T j= 15 0 °C • 7 lÆ - J U K • Full M o ld e d • filR = 0 .3 m A • L ow I r = 0 .3 it iA • if & f lÆ S Ê ê C U C C U • R esista n ce fo r th e rm a l ru n -a w a y

ba4402

Contextual Info: Audio ICs FM front end | BA4402 / BA4404 T h e B A 4 4 0 2 and B A 4404 a re fro nt e n d ICs for FM rad io receivers. T h e s e d ev ic e s can be u sed in a w id e ran g e o f applications, from 3V portable radios to h om e stereo tuners. T he BA4402 and B A4404 consist of an RF amplifier, oscillator circuit, mixer circuit, and a variable capacitor-diode for

Contextual Info: P R E L IM IN A R Y D A T A S H E E T N O . P D -9 .7 9 3 International S Rectifier IRGBG30FD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast Speed Co-Pack IGBT • Latch-proof Vces = 6 0 0 V • Simple gate drive • High operating frequency

DIODE T25 4 EO

Abstract: DIODE T25 4 bo DIODE T25 4 ko diode,FET BUK627-500B DIODE T25-4-bo
Contextual Info: Philips Components Data sheet status P ro d u c t s p e c ific a tio n date of issue March 1991 PH ILIP S N -channel en han cem en t m ode field-effect pow er transistor in a plastic full pack envelope. F R E D F E T with fast recovery reverse diode, particularly suitable

S10VB20

Contextual Info: SQ.I.P.3S Square In-line Package Bridge Diode O U T L IN E D IM E N S IO N S S10VBD : + ©: 600V 10A Plastic body with back Al heat transfer plate. -H • Unit ^ mm Weight ■ 8.5g - R A TIN G S A bsolute Maximum R atings m a, Item Symbol ~ mi . T yp e No.

Contextual Info: 32E D • Ô 23b320 O O lb b Q i T H S I P Silicon Switching Diode Array _S I E M E N S / SMBD 7000 SPCL-, SEM ICO N DS _ T ~ -2 3 - g ? • For high-speed sw itching applications • Connected in series C2 ,A 1 Tÿpe M a rk in g O rd e rin g c o d e fo r

5n120bnd

Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

D15XB60H

Contextual Info: -j'j v V ÿ 'C t - F î/y ^ n /'fy ^ 'fy M Bridge Diode Single In-line Package OUTLINE DIMENSIONS D15XB H SU 600V 15A ¡HSU •»süsiPA’y 'r - y •UL1SW UL File No,E 1 4 2 4 2 2 •/¡tS Ë ttU lM •S fÎJ E E x H I fsm («a± *nîEowcB, Mfcfem RATINGS