41880 Search Results

Diode BAY 45

Abstract: Diode BAY 89 41880
Contextual Info: BAY 89 Silizium-Diffusions-Diode Silicon diffusion diode Anwendungen: Allgemein, für sehr hohe Betriebsspannungen Applications: General purpose, for very high supply voltages Normgehäuse Case 5 1 A 2 DIN 41880 JEDEG DO 7 Gewicht • Weight max. 0,2 g Abmessungen in mm

BA124 Diode

Abstract: BA124
Contextual Info: BA 124 Silizium-Kapazitäts-Diode Silicon capacitance diode Anwendungen: Automatische Nachstimmschaltungen in VHF-Turiern Applications: AFC in VHF tuner Abmessungen in mm Dimensions in mm 02,6 Cl 5 117 0 0,55 I Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

BAY41

Abstract: BAY43 Q60201-Y bay 42
Contextual Info: BAY 41, BAY 42, BAY 43 Silicon planar sw itching diodes Silicon planar diodes BAY 41, BAY 42 and BAY 43 are suitable for high-speed, medium-current switching applications. They are supplied in glass-cases 51 A 2 DIN 41880 D O -7 . The cathode is identified by a colour ring.

BAY45

Abstract: BAY44 60201-Y45 Q60201-Y44 Q60201-Y45 BAY46 60201 Diode BAY 55 KF 517 BAY 45
Contextual Info: BAY 44, BAY 45, BAY 46 General-purpose silicon diodes Silicon diodes BAY 44, BAY 45 and BAY 46 are suitable for universal application in equipment with high operating temperatures and where space is at a premium. They are provided with a glass-case 51 A 2 DIN 41880 D O -7 . The cathode end is marked

AA138

Abstract: germanium point contact diode tfk 138 Germanium Diode aa138 diode aa138 "Point Contact Diode" diode tfk TFK diode Germanium Diode tfk Germanium diode IV
Contextual Info: € 1 » AA 138 'W Germanium-Spitzendiode Germanium point contact diode Anwendungen: Demodulatorschaltungen in FS-Geräten Applications: Demodulator circuits in TV receivers Abmessungen in mm Dimensions in mm Œ Absolute Grenzdaten Normgehäuse Case 5 1 A 2 DIN 41880

AA132

Abstract: DIODE Aa132 germanium point contact diode 23 TFK 001 Germanium "Point Contact Diode" aa132 diode
Contextual Info: 4W& A A 132 'W Germanium-Spitzendiode Germanium point contact diode Anwendungen: Allgemein, für hohe Betriebsspannungen. Applications: General purpose, for high supply voltages. Abmessungen in mm Dimensions in mm g 2.6 00.55 Normgehäuse Case 5 1 A 2 DIN 41880

k2485

Abstract: germanium Germaniumdiode MA6050 CD030
Contextual Info: Hochsperrende G erm anium -Spitzendiode A A Y 28 Die hochsperrende Germaniumdiode A A Y 28 im Glasgehäuse 51 A2 DIN 41880 D O -7 für universelle Anwendung ist unlackiert und durch Farbringe gekennzeichnet. Vom kathoden­ seitigen Ende beginnend lautet der Farbcode: braun/grau/rot/grau.

tunnel diodes

Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Contextual Info: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance

Diode BAY 68

Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Contextual Info: A E G CORP 17E D O D ETM Sb Q Q G TTH S □ • BAY 68 • BAY 69 TfiBLSiPiyiliiKIIKl electronic Creative TechnoSogies T-0Z-Q°l Silicon Epitaxial Planar Diodes Applications: Very fast switches Dimensions in mm Cathode Standard glass case 5 4 A 2 DIN 41880

Fujitsu mb

Abstract: D 1145 mb fujitsu
Contextual Info: F U JIT S U MB 40748 MB 40749 10-BIT ULTRA-HIGH SPEED D/A CONVERTER ? A pril 1984 E dition 1.0 o r i & 005483 5HS3 FUT 10-BIT ULTR A-HIG H SPEED D /A CONVERTER JUL 1 41880 The F u jitsu M B 4 0 7 4 8 and M B 4 0 7 4 9 are 10 b it U ltra -h ig h speed lo w -p o w e r

54B2

Abstract: 41880
Contextual Info: DO-41 Glass VISHAY Vishay Semiconductors DO-41 Glass Package Dimensions in mm Inches Cathode Identification technical drawings according to DIN specifications 94 9368 ∅ 0.86 (0.03)max. ∅ 2.6 (0.10) max. StandardGlass Case 54 B 2 DIN 41880 JEDEC DO 41

Contextual Info: DO-35 VISHAY Vishay Semiconductors DO-35 Package Dimensions in mm Inches Cathode Identification technical drawings according to DIN specifications 94 9366 ∅ 0.55 (0.021) max. ∅ 1.7 (0.066) max. Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Document Number 84001

Diode BAY 93

Abstract: diode MARKING A9 3814 rus25 Scans-0014926
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • Û00S753 b ■ AL GG BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dim ensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880

Diode BAY 93

Abstract: a9 sot 23 diode
Contextual Info: TELEFUNKEN ELECTRONIC 17E D Û00S753 b • AL GG ■ BAY 93 ■¡nH IF(U I«IM electronic Creative Technologies T -Q l-Q j Silicon Epitaxial Planar Diode Applications: Very fast switches Dimensions in mm Cathode »26 Standard glass case 5 4 A 2 DIN 41880 JEDEC DO 35

AAY 45

Abstract: PJ 63 MM diode GERMANIUM pj 87 diode diode pj 87 FLA-103 AAY27 Scans-00105515
Contextual Info: G erm a n iu m -H F-S p itze n d io d e A A Y 27 Die Germaniumdiode A AY 27 im Gehäuse 51 A2 DIN 41880 D O -7 hat neben einer hohen Durchlaßsteilheit kleine Schaltzeiten und ein sehr gutes Spannungsrichtverhältnis bei hohen Frequenzen. Sie eignet sich deshalb sowohl für HF- als auch für Schalteranwendungen. Die

MB8164E

Abstract: MB8164H MB8164 MB8164N
Contextual Info: F U J IT S U ? > MOS 65536-BIT MB 8164N/E/H DYNAMIC RANDOM A C C ESS MEMORY *eceW« ^ z 002482 Z h 'SZ JU ’ L I 41880 o * S S S ' p u T September 1978 65.536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu M B 8 1 64 is a fu lly decoded, dynam ic NMOS random access memory

LD 8164

Contextual Info: / FU JIT S U 3 Z MOS 65536-BIT MB 8164N/E/H DYNAMIC RANDOM ACCESS MEMORY O '- 002482 Z ^ Ï L ? $ ;0r\v Rc t M . 1 41880 r ‘J ' T September 1978 65,536-BIT D Y N A M I C R A N D O M A C C E S S M E M O R Y The Fujitsu M B 8 1 64 is a fu lly decoded, dynam ic N M O S random access memory

diode ba 204

Abstract: TFK ba204 ba capacitance diode BA204 BA-204
Contextual Info: BA 204 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Allgemein Applications: General purpose Abmessungen in mm Dimensions in mm » '» • 0 1 ,9 KATHODE 0 0 ,5 8 CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight

Diode BAY 55

Abstract: Diode BAY 88 Diode BAY 21 Diode BAY 45 BAY 88 diode BAY 87 diode U264 B u264 74345 BAV86
Contextual Info: BAY 86 * BAY 87 • BAY 88 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Allgemein Applications: General purposes Abmessungen in mm Dimensions in mm g 2,6 Absolute Grenzdaten Absolute maximum ratings Normgehäuse Case 5 1 A 2 DIN 41880 JEDEC DO 7

k 518

Contextual Info: Silizium -Planar-Kapazitätsdiode B B Y 30 BBY 30 ist eine planare Silizium-Kapazitätsdiode im Gehäuse 51 A2 DIN 41880 D O -7 , welche besonders für Anwendungen im unteren VHF-Bereich geeignet ist. Kathode Typ B este lln u m m e r BBY 30 Q 62702-B 44

DIODE B44

Abstract: BBY30
Contextual Info: BBY30 Silicon planar capacitance diode BBY 30 is a capacitance diode in a case 51 A 2 DIN 41880 DO -7 for commercial applications. Type BBY 30 O rd e r n u m b e r Q 627 02 -B 44 W eight approx. 0.2 g M a x im u m ra tin g s Reverse voltage Forward current (7"ambg 6 0 °C )

Diode BAY 93

Contextual Info: BAY 93 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Sehr Schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions In mm »’»• KATHODE 01,9 CATHODE 0 0 ,5 8 Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35

BAY46

Abstract: BAY44 Diode BAY 55 BAY45 Diode BAY 46 Q60201-Y46 Q60201-Y45 BAY 45 Q60201-Y44
Contextual Info: S ilizium -U niversaldio den m it niedrigem S p errstrom BAY 44 BAY 45 -BAY 46 Die Silizium -Dioden BAY 44, BAY 45 und BAY 46 im Glasgehäuse 51 A2 DIN 41880 D O -7 ,

JK 330N

Abstract: 1024-words s3z diode
Contextual Info: F U J IT S U MBM 93415A TTL 1024-BIT BIPOLAR RANDOM ACCESS MEMORY S-3Z . • 002519 Septem ber 1978 JUL 1 41880 FU T 1024-BIT BIPOLAR TTL RANDOM ACCESS MEMORY T he F u jits u M BM 9 3 4 1 5 A is a f u lly decoded 1 0 2 4 -b it T T L re a d /w rite random access m e m o ry fo r b u ffe r