DIODE B6S Search Results
DIODE B6S Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE B6S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RB160-40
Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
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Original |
cdsl4148ll4148pmll4148rls4148+14 | |
DI108S
Abstract: SK5100 CP2506 sb5200 SB840
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38x45di108ssk5100cp2506+2 | |
BBY58-02L
Abstract: DIODE T6 marking DIODE B6S marking G SOT323 Transistor BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
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bby58bby58-02l/vbby58-02wbby58-03w+7 | |
marking code 62 3 pin diode
Abstract: sot323 marking code A.C diode marking code 88 MARK A SCD80
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bby58bby58-02l/vbby58-02wbby58-03w+9 | |
DIODE B6S
Abstract: v sot323 BBY58-02W 88 BBY58 BBY58-02L BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
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bby58bby58-02l/vbby58-02wbby58-03w+7 | |
br 123 s
Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
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Original |
o-252o-277ao-277bma/do-214ac+8 | |
TSLP
Abstract: *T4 MARKING pin diode marking b8
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bby58bby58-02l/vbby58-02wbby58-03w+8 | |
LL5817
Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
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Original |
c3b03ll5817smd ss12diode ss34+7 | |
Infineon Technologies Silicon Tuning DiodeContextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs |
Original |
bby58bby58-02l/vbby58-02wbby58-03w+6 | |
smd Marking OU
Abstract: B05S-G B05S smd marking NE B10S B10SG
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Original |
b05s-gb10s-go269aa125grams+6 | |
BBY58-02L
Abstract: BBY58 BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W BBY58-07L4 SC79 SCD80
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bby58bby58-02l/vbby58-02wbby58-03w+7 | |
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Contextual Info: BBY58. Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low tuning voltage operation for VCO's in mobile communications equipment • For low frequency control elements such as TCXOs and VCXOs |
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bby58bby58-02l/vbby58-02wbby58-03w+4 | |
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Contextual Info: COMCHIP SMD General Purpose Bridge Rectifier Diode SMD Diodes Specialist B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. -Ideal for printed circuit board. 0.031 0.80 0.019 (0.50) |
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b05s-gb10s-g125gramsqw-bbr01+6 | |
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Contextual Info: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing |
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b05s-gb10s-gqw-bbr0182min+6 | |
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Contextual Info: SMD General Purpose Bridge Rectifier Diode B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features MBS -Rating to 1000V PRV. 0.031 0.80 0.019 (0.50) -Ideal for printed circuit board. + - -Reliable low cost construction utilizing |
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b05s-gb10s-gqw-bbr0182min+6 | |
general purpose bridge rectifier
Abstract: comchip rectifier bridge low smd diode bridge
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b05s-hfb10s-hf125gramsqw-jbr03+9 | |
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Contextual Info: COMCHIP SMD Gen er al Purpose Bridge Rect ifier Diode SMD Diodes Specialist B01S-G B05S-G Thru B10S-G Reverse Voltage: 50 to 1000 Volts Forward Current: 0.8 A RoHS Device Features TO269AA MiniDIP -Rating to 1000V PRV. -Ideal for printed circuit board. 0.193 (4.90) |
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b01s-gb05s-gb10s-go269aa+2 | |
DIODE B6S
Abstract: B6S Bridge rectifier DIODE MARKING B4 TO-269AA diode marking b2 JESD22-B102D J-STD-002B
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e54214j-std-020c2002/95/ec2002/96/ec+9 | |
diode b2s
Abstract: DIODE B6S
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e54214j-std-0202002/95/ec2002/96/ec+4 | |
DIODE B6S
Abstract: diode b2s diode marking b2 JESD22-B102 J-STD-002 B6S Bridge rectifier
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e54214j-std-0202002/95/ec2002/96/ec+9 | |
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Contextual Info: B2S, B4S, B6S www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES ~ • UL recognition, file number E54214 • Saves space on printed circuit boards ~ • Ideal for automated placement |
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e54214j-std-020o-269aa2002/95/ec+3 | |
DIODE B6S
Abstract: B6S Bridge rectifier TO-269AA MBS JESD22-B102 J-STD-002 general purpose bridge rectifier by using diode diode b2s
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e54214j-std-0202002/95/ec2002/96/ec+9 | |
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Contextual Info: New Product B2S, B4S & B6S Vishay General Semiconductor Miniature Glass Passivated Single-Phase Surface Mount Bridge Rectifier FEATURES • UL recognition, file number E54214 • Saves space on printed circuit boards • Ideal for automated placement • Middle surge current capability |
Original |
e54214j-std-0202002/95/ec2002/96/ec+3 | |
philips tv smps
Abstract: BUK454-500B T0220AB
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OCR Scan |
0030b25buk454-500bt0220abphilips tv smps | |