DIODE 72A Search Results

diode sg 64

Abstract: SG5774AJ SG5772J SG25768 sf 819 d 1N5772 JANTX 1N5768 SG25770J
Contextual Info: , SG5768/68A SG5770/70A, SG5772/72A, SG5774/74A SG25768, SG25770, SG6496/96A DIODE ARRAY CIRCUITS SILICON GENERAL LINEAR IN TEGRATED CIRCUITS DESCRIPTION FEATURES The Silicon General series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

FF300R06KE3

Contextual Info: Technische Information / technical information FF300R06KE3 IGBT-Module IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and EmCon3 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data

Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR

Contextual Info: Preliminary Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = £ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT with Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES

IXGK72N60B3H1

Abstract: PLUS247 ixgx72n60b3h1 IXGX72N60B3H
Contextual Info: Preliminary Technical Information IXGK72N60B3H1 IXGX72N60B3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs 5-40 kHz switching = = ≤£ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

MMIX1X200N60B3H1

Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings

72N60A3

Abstract: IXGX72N60A3H1 IXGK72N60A3H1 PLUS247 IF110 IGBT 600V 200A NS0-100
Contextual Info: Advance Technical Information IXGK72N60A3H1 IXGX72N60A3H1 GenX3TM 600V IGBT w/Diode VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = ≤£ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: GenX3TM 600V IGBTs w/ Diode IXGK72N60B3H1 IXGX72N60B3H1 VCES IC110 VCE sat tfi(typ) Medium Speed Low Vsat PT IGBTs 5-40 kHz Switching = = £ = 600V 72A 1.8V 92ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR

DS100144

Contextual Info: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGK72N60A3H1 IXGX72N60A3H1 VCES IC110 VCE sat tfi(typ) Ultra-Low Vsat PT IGBTs for up to 5kHz Switching = = ≤£ = 600V 72A 1.35V 250ns TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

IXGX72N60C3H1

Abstract: PLUS247
Contextual Info: IXGX72N60C3H1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBT with Diode IXGX72N60C3H1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBT for 40-100kHz Switching = = ≤£ = 600V 72A 2.5V 55ns PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

FMX-G12S

Abstract: FMXG12
Contextual Info: FMX-G12S SANKEN ELECTRIC CO., LTD. 1. Scope The present specifications shall apply to an FMX-G12S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent 3. Absolute maximum ratings

Contextual Info: MFC135 MFA135 MFK135 MFX135 Thyristor/Diode Modules Features： n Isolated mounting base 2500V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n AC/DC Motor drives n Various rectifiers n

NS1106

Abstract: FMNS1106S ns1106s
Contextual Info: SANKEN ELECTRIC CO., LTD. FMNS-1106S 1. Scope The present specifications shall apply to an FMNS-1106S. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 090714 Flammability : UL94V-0 Equivalent 1／5 61426-01

Contextual Info: MFC135 MFA135 MFK135 MFX135 Thyristor/Diode Modules Features： n Isolated mounting base 3600V~ Pressure contact technology with Increased power cycling capability n Space and weight savings Typical Applications n AC/DC Motor drives n Various rectifiers n

FMB-G14L

Abstract: FMBG14L FMBG14
Contextual Info: SANKEN ELECTRIC CO., LTD. FMB-G14L 1. Scope The present specifications shall apply to an FMB-G14L. 2. Outline High Frequency Rectification 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability : UL94V-0 Equivalent

FMJ-23L

Abstract: DIODE 23L
Contextual Info: SANKEN ELECTRIC CO., LTD. FMJ-23L 1. Scope The present specifications shall apply to an FMJ-23L. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications Flammability：UL94V-0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings

IRGB4061D

Abstract: IRF1010 Transistor marking code S IRGB4061DPBF
Contextual Info: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

Contextual Info: PD - 97189B IRGB4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • • Low VCE ON Trench IGBT Technology Low switching losses Maximum Junction temperature 175 °C 5 S short circuit SOA

duraseal

Abstract: SiC IGBT High Power Modules sic wafer 100 mm Wacker Silicones 28Cu72Ag wacker 100C parallel mosfet Cree SiC MOSFET silicon carbide
Contextual Info: Performance and Reliability Characteristics of 1200 V, 100 A, 200oC Half-Bridge SiC MOSFET-JBS Diode Power Modules James D. Scofield and J. Neil Merrett Air Force Research Laboratory 1950 Fifth St WPAFB, OH 45433 937-255-5949 james.scofield@wpafb.af.mil James Richmond and

Diode N2206

Abstract: FMN-2206S fmn2206s FMN 2206S
Contextual Info: SANKEN ELECTRIC CO., LTD. FMN-2206S 1. Scope The present specifications shall apply to an FMN-2206S 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 071029 Flammability : UL94V-0 Equivalent 1／5 61426-01 SANKEN ELECTRIC CO., LTD.

G50N60

Contextual Info: Preliminary Technical Information High-Gain IGBT w/ Diode VCES = 600V IC110 = 21A VCE sat ≤ 2.50V IXGJ50N60C4D1 (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C