DIODE 474 Search Results
DIODE 474 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
DIODE 474 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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skiip 33 ups 063
Abstract: semikron skiip 33 skiip 33 ups SKIIP CASE S4 skiip gar 170 1000A current sensors
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igbt11rthjs10skiip 33 ups 063semikron skiip 33+4 | |
S4 89 DIODEContextual Info: SKiiP 1092 GB 170 - 474 CTV Absolute Maximum Ratings Symbol 4 Visol Top ,Tstg Conditions 1) Values AC, 1min Operating / stor. temperature IGBT and InverseDiode VCES 5) VCC Operating DC link voltage IC IGBT 3) Tj IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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s4 89 diode | |
DIODE S4 08
Abstract: B75 diode skiip gb 120 S4 DIODE semikron skiip 3 gb 120 SKIIP CASE S4 diode S4 98
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900/1200vdiode s4 08b75 diodeskiip gb 120+4 | |
SKIIP CASE S4
Abstract: semikron skiip 20 semikron skiip 3 gb 120 1092GB170-474CTV SKiiP1092GB170-474CTV
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1092gb170-474ctvskiip case s4semikron skiip 20semikron skiip 3 gb 120+1 | |
731 zener diode
Abstract: FR 309 diode 217F diode zener c5 R27A
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zpsa60-5731 zener diodefr 309 diode217f+2 | |
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
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1s28351s28361s28371s2838+16 | |
Z6 DIODE
Abstract: BZX84C27 BZX84C30 BZX84C33 BZX84C36 BZX84C39 BZX84C43 BZX84C47 BZX84C4V7 BZX84C51
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z6 diodebzx84c27bzx84c30bzx84c33+6 | |
silicon general 16 pin ceramic dip JContextual Info: SG6100/SG6101 SILICON ADVANCED DATA SHEET GENERAL DIODE ARRAY CIRCUITS LINEAR INTEGRATED CIRCUITS DESCRIPTION FEATURES The SG6100 and SG6101 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100 is configured with 7 straight |
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sg6100/sg6101100masg6100sg6101+5 | |
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Contextual Info: 5SDF 06D3004 5SDF 06D3004 Old part no. DM 827-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000 |
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06d300406d25041768/138adm/267/08+1 | |
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Contextual Info: 5SDF 06T3004 5SDF 06T3004 Old part no. DM 827C-620-30 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 3 000 |
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06t3004827c-620-3006t25041768/138a+2 | |
1N4148WSContextual Info: Diode Silicon Epitaxial Switching Diode Feature: • Fast Switching Diode. Marking 1N4148WS= A2 with cathode band. Absolute Maximum Ratings Description Symbol Value Continuous Reverse Voltage VR 75 VRRM 100 *IF AV 150 Surge Forward Current t <1s and Tj = 25°C |
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1n4148ws | |
linfinity
Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
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sg5768sg5770sg5772sg5774+15 | |
1N6510 JAN
Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
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sg6100/sg6511sg6101/sg65101n610014-pin+10 | |
1N6509Contextual Info: 1N6509 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 9 FEATURES: • • • • 5 QUALIFIED PARTS LISTING: MIL-PRF-19500/474 |
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1n6509mil-prf-19500/474100na100madc+5 | |
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Contextual Info: [ UTZ-SC0323_2 ] 2012/10/02 Aquamarine Laser Diode NDA4116 Features Outline Dimension • Peak Wavelength: 473nm • Optical Output Power: 100mW • Can Type: 5.6 mm Floating Mounted with Photo Diode and Zener Diode Unit mm ( Item Symbol |
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utz-sc0323nda4116473nm100mw | |
1N5772
Abstract: 1N5772 JANTX
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1n5772mil-prf-19500/474100na100madc+6 | |
msc1005
Abstract: MSC1005 datasheet 1N6100
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1n6100mil-prf-19500/474100na100madc+4 | |
1N6511
Abstract: MSC1010
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1n6511mil-prf-19500/474100na100madc+3 | |
1N6510
Abstract: MSC1009
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1n6510mil-prf-19500/474100madc10madc+2 | |
MSC1006
Abstract: 1N6101
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1n6101mil-prf-19500/474100na100madc+3 | |
1N5774
Abstract: 1N5774 JANTX
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1n5774mil-prf-19500/474100na100madc+6 | |
operational amplifier k161
Abstract: K161 laser diode driver circuit automatic power control SY88902 SY88903 SY88904 SY88904KC SY88904KCTR SY88904KH SY88922
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sy88903sy8890216-pinsy88904+8 | |
Nichia laser
Abstract: IEC-60825 nichia laser diode UTZ-SC0323 nda4116
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utz-sc0323nda4116473nm100mw+3 | |
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Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6100 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions |
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mil-prf-19500/4741n610014-pint4-lds-0082 | |