1N6101 Search Results

1N6510

Abstract: 1N6101 1N6510 JANTX
Contextual Info: 1N6101 and 1N6510 JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -PRF-19500/474 Features • • • • • BV ≥ 75 V @ 5 µA IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C… 4.0 pF (MAX)

MSC1006

Abstract: 1N6101
Contextual Info: 1N6101 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • QUALIFIED PARTS LISTING: MIL-PRF-19500/474 Bv > 75V at 5uA

1N6101

Abstract: 1N6101 JAN
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ISOLATED DIODE ARRAY Qualified per MIL-PRF-19500/474 DEVICES LEVELS 1N6101 JAN JANTX JANTXV DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions

Contextual Info: J E R ttW LHB5 1N6101 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V

FSA2719M

Abstract: FSA2620P FSA2719P fsa2619m FSA2619 fsa2719 fsa2620 fsa*2619 FSA2620M MAD1108P
Contextual Info: Page 2 of 3 Online Store Home Diodes Diode Arrays 1N6101 Diodes Transistors Integrated Circuits Optoelectronics Thyristors Spec Sheets Tutorials FAQs Company Testimonials Store Policies Contact Us Did you know. Diode Array Price: $ 69.95 Special: $ 55.96

1N6101

Abstract: 1N6101 JAN
Contextual Info: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 16-PIN Ceramic DIP WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes

1N6101

Abstract: Diode Array
Contextual Info: SENSITRON SEMICONDUCTOR 1N6101 TECHNICAL DATA DATA SHEET 4251, REV. - Isolated Diode Array Applications: • High Frequency Data Lines  RS-323 & RS-432 Networks  LAN, Ethernet, I/O Ports  IEC61000-4 compatible for ESD / EFT / Surge Features:  

1N6101

Contextual Info: 1N6101 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 75V at 5uA Ir < 100nA at 40V

1N6101

Contextual Info: 1N6101 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 16-PIN Ceramic DIP WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN package for use as steering diodes

RS323

Contextual Info: SENSITRON SEMICONDUCTOR 1N6101 TECHNICAL DATA DATA SHEET 4251, REV. - Isolated Diode Array Applications: • High Frequency Data Lines • RS-323 & RS-432 Networks • LAN, Ethernet, I/O Ports • IEC61000-4 compatible for ESD / EFT / Surge Features: • •

Contextual Info: 1N6101+JANTXV Diodes Array of Independent Diodes Military/High-RelY @Temp øC (Test Condition) Circuits Per Package8 Diodes Per Circuit1 I(F) Max. (A) Forward Current100m V(RRM) (V) Rep.Pk.Rev. Voltage65 t(rr) Max.(s) Rev. Rec. Time5.0n @I(F) (A) (Test Condition)10m

FSA2510

Abstract: FSA2619 FSA2620 tnd903
Contextual Info: DIODE ARRAYS PACKAGES AND CIRCUITS 14 6 1 7 D IP1-7 D IP 1-8 1 2 3 1 2 DAN215 4 - 8 700 - ^ < 4— 0.400 — ^ 0.400 — ^ A A ♦ 0.295 m ax A A 0.295 DAN401 YYYm t' 0055 _14 Places N ote 1 T T _ o 100 0.020 Dia n 0.300 Typ ' Note 1: DIP sockets have 0.020” diameter solder tail. Brass

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

1N6100

Abstract: 1N6101
Contextual Info: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION 14-PIN Ceramic Flat Pack WWW. Microsemi . C O M APPEARANCE DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering

Contextual Info: 1N6100 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE 14-PIN Ceramic Flat Pack WWW . Microsemi .C OM DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use as steering

SG6101J

Abstract: sg6101
Contextual Info: IlSFMTY SG6100/SG6511 SG6101/SG6510 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS FEATURES DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

1N5770

Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

FDC9268

Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):

1N6510 JAN

Abstract: 1N6510 LINFINITY linfinity 1N6100 1N6101 1N6510 1N6511 SG6100 SG6101 SG6511
Contextual Info: SG6100/SG6511 SG6101/SG6510 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has

diode sg 8c

Abstract: SG6510D SG6101J 114-PIN 1N6101 JAN sg 88 diode sg6101 6510 1n6511
Contextual Info: LIN Doc #; 6100 S G 6 1 0 0 /6 5 1 1 , S G 6 1 0 1 /6 5 1 0 T he I n f i n i t e P o w e r o f ,N M \ I ( D iode I n n o v a t i o n A rray P r o d u c t i o n D ata DESCRIPTION T he SG 6100/SG6511 a n d SG 6101/ SG6510 d io d e arrays are m o n o lith ic,