1N6509 Search Results

1N6509

Contextual Info: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION APPEARANCE These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

1N6509

Contextual Info: 1N6509 JANTX, JANTXV A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 9 FEATURES: • • • • 5 QUALIFIED PARTS LISTING: MIL-PRF-19500/474

K1N5

Abstract: 1N6509 N6509
Contextual Info: 1N5774 and 1N6509 A Microsemi Company JAN, JANTX, JANTXV 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL-S-19500/474 Features • • • • BV > 60 V @ 10 |o.A lR< 100 nA @ 40 V VF< 1 V @ 100 mA C.8.0 pF (MAX) PLANAR AIR-ISOLATED

1N6509

Contextual Info: 1N6509 Isolated Diode Array with HiRel MQ, MX, MV, and MSP Screening Options SCOTTSDALE DIVISION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering

1N6509

Abstract: MSC1020
Contextual Info: 1N6509 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY 10 9 FEATURES: • • • • 5 HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA Ir < 100nA at 40V

Contextual Info: J Z ^ r\/E O HLHB5 1N6509 A Microsemi Company 580 Pleasant St. Watertown, MA 02472 Phone: 617-924-9280 Fax: 617-924-1235 DIODE ARRAY PRODUCT SPECIFICATION MONOLITHIC AIR ISOLATED DIODE ARRAY FEATURES: • • • • HERMETIC CERAMIC PACKAGE Bv > 60V at 10uA

MONOLITHIC DIODE ARRAYS

Abstract: 1N5774 1N6509 C80 diode
Contextual Info: 1N5774 and 1N6509 JAN, JANTX, JANTXV A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: 617 924-9280 FAX: (617) 924-1235 MIL -S-19500/474 Features • • • • BV ≥ 60 V @ 10 µ A IR ≤ 100 nA @ 40 V VF ≤ 1 V @ 100 mA C…8.0 pF (MAX)

U11H

Abstract: linfinity 8 ceramic dip ir U11H
Contextual Info: i i N f r v SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 m M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations.

SG5772F

Contextual Info: LIN Doc #; 5768 SGS768/SG5770/SG5772/SG5774 SG6506/SG6507/SG6508/SG6509 D T he I n f i n i t e P o w e r o f I n n o v a t i i ode A P r o d u c t i o n DESCRIPTION T he Linfinity series o f d io d e arrays fe a tu re h ig h b re a k d o w n , h ig h s p e e d

1N6496

Abstract: 1N6101 1n6511 1N6506 1N6507 1N5768 1N5770 1N5772 1N5774 1N6100
Contextual Info: INCH-POUND MIL-PRF-19500/474G 22 August 2008 SUPERSEDING MIL-PRF-19500/474F 23 January 2007 The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 November 2008. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

linfinity

Abstract: MIL-S-19500/474 1N5768 14 pin dip diode array linfinity 8 ceramic dip "pin to pin" SG5768F SG6509 55c diode 1N5772
Contextual Info: SG5768, SG5770, SG5772, SG5774 SG6506/SG6507/SG6508/SG6509 DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V minimum breakdown voltage • 500mA current capability per diode

1N6506

Contextual Info: SG5768, SG5770, SG5772 , SG5774 SG6506/SG6507/SG6508/SG6509 M I C R O E L E C T R O N I C S DIODE ARRAY CIRCUITS DESCRIPTION FEATURES The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. • 60V m inim um breakdown voltage

1N5770

Contextual Info: INCH-POUND MIL-PRF-19500/474F 23 January 2007 SUPERSEDING MIL-PRF-19500/474E 3 November 1997 The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 March 2007. * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, SILICON, MULTIPLE DIODE ARRAYS,

FDC9268

Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Contextual Info: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):