DIODE 30D2 Search Results

30d2

Contextual Info: Type：30D2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

30D1 diode

Abstract: diode 30D1 30D1 30D4 diode
Contextual Info: Type：30D1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

30D1 diode

Abstract: 30D2 diode 30D2 30D4 diode
Contextual Info: Type：30D2 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

30D4 diode

Abstract: 30D1 diode
Contextual Info: Type：30D4 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

Diode 30D2

Abstract: 30D2 30d2 diode
Contextual Info: ｓ DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM

30D2 diode

Abstract: 30D4 diode 30D2 30D1 diode
Contextual Info: ｓ DIODE 30D2 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D2 VRRM

S613

Contextual Info: SILICON RECTIFIER DIODE 3A/100— 400V 30D1 30D2 30D4 FEATURES ° Low Forward Voltage Drop ° Low Reverse Leakage Current • High Surge Capability Approx. Net Weight: 1.24 Grams MAXIMUM RATINGS \ type Voltage Rating 30D 1 30 D 2 30 D 4 Unit Symbol\^ Repetitive Peak

Contextual Info: 30D1 30D2 30D4 3 A /10 0 ~ 4 0 0 V SILICON RECTIFIER DIODE FEATURES 5.8 .23 DIA » Low Forward Voltage Drop Low Reverse Leakage Current 1.5(.059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)

30D1 diode

Abstract: 30D4 diode 30D1 30D2 30D4
Contextual Info: 30 D 1 30D2 30D4 3 A /10 0 ~ 40 0 V SILICON RECTIFIER DIODE FEA TURES 5.8 .23 DIA • Low Forward Voltage Drop - t o Low Reverse Leakage Current 1.5C059) DIA 1.3C051) ° High Surge Capability 21(.83) MIN 10(.39) MAX 1.5(.059) DIA 1.3(.051) 2K.83) . MIN Dimensions in mm (Inches)

30D1 diode

Abstract: 30d1
Contextual Info: ｓ DIODE 30D1 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D1 VRRM

30D4 diode

Abstract: 30D1 diode 30d1 30d2 diode
Contextual Info: ｓ DIODE 30D4 Type : OUTLINE DRAWING FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage 30D4 VRRM

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

F10P100

Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Contextual Info: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ED203

Abstract: 9M32 30D-1A12N1
Contextual Info: DB LECTRO com sm s electronmm ELECTRONIC COMPONENTS Microminiature Reed Relays 2 These are the ultimates in miniature reed relays for highfrequency properties and are one pitch step (2.54mm) smaller than the 20D series. The 30 series are available Electrostatic Shield and Coaxial Shield.

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

30D-2A12N1

Abstract: 30D-2A22N1 30D-2A32N1
Contextual Info: SPECIFICATIONS Model Number TYPE 30D-2A 12N1 Parameters Test Conditions Units 30D-2A12N1 30D-2A22N1 30D-2A32N1 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 150 600

11N1

Contextual Info: SPECIFICATIONS Model Number TYPE 30D-2A 11N1 Parameters Test Conditions Units 30D-2A11N1 30D-2A21N1 30D-2A31N1 Coil Specs Nominal Coil Voltage Max Coil Voltage ± 10% at 20° C VDC 5.0 12.0 24.0 15° C to 35° C VDC 5.5 13.2 26.4 15° C to 35° C W 150 600

32ctq30

Abstract: DA 2045 DC-005 DC converter 500V 30D2 DC-003 REV01 30D5-3 converter 48 to 24 switching DC-006
Contextual Info: beta dyne 30W DC/DC CONVERTER 3:1 Input, Dual-Output Parallel or Redundant Operation ~ Patent Pending ~ Key Features • • • • • • • • • • 3:1 input voltage range Efficiency up to 85% Input to output isolation Input LC filter Soft start Short circuit protection

LF847

Abstract: Seven Transistor Array PNP l5 transistor PNP N5 npn transistor CS2500 CS3200 lf-621 LF853 CS4000 transistor PNP L5
Contextual Info: -RRY SEMI CONDUCT OR CORP 57E J -Db7S5b 3 D QE2 1 A - " r - m 037 -s i Chapter 1 - Getting Started With your circuit simulations and worst case analysis done, you are ready to begin the layout phase of your

db3 c918

Abstract: TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple
Contextual Info: 8 6 7 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. D 2 3 4 5 REV 10/15/2004 CONTENTS

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

Diode 31d8 06

Abstract: r2561 11A3 bubba oscillator schematic 31d8 diode 2N7002DW zener DB3 C209 bubba oscillator 88E1111 config MBR0520LT
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B CONTENTS