DIODE 182 Search Results

LMH6525

Abstract: High-Frequency Modulation Laser cd dvd
Contextual Info: LMH6525,LMH6526 LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output Literature Number: SNOSAF1A LMH6525/LMH6526 Four–Channel Laser Diode Driver with Dual Output General Description Features The LMH 6525/6526 is a laser diode driver for use in

1842m

Abstract: DIODE 4d LDD400-1P ldd200 2i125 LDD200-2P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

DIODE 4d

Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
Contextual Info: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

BA182

Abstract: tfk 4 SOD 23 TFK diode br351 SOD-23
Contextual Info: BA 182 Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Bereichsumschaltung in VHF-Tunern A p p lic a tio n s : Band se le cto r in VHF-tuners Abmessungen in mm D im en sio n s in mm 2 ,4 KATHODE 1 2 ,5 0 ,2 1,2 0 ,7 5 fdsHf CA TH OD E

MBD501

Abstract: MBD701
Contextual Info: MBD501 MBD701 . HIGH-VOLTAGE SILICON HOT-CARRIER SCHOTTKY BARRIER . . . designed primarily applications. digital Readily applications. low-cost, for high-efficiency DIODE DIODE UHF and VHF detector adaptable to many other fast switching Supplied in an inexpensive

Module, Diode 200A, 600V Single,

Abstract: CS241020 D-18
Contextual Info: CS241020 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Fast Recovery Single Diode Module 200 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast

Contextual Info: LMH6533 LMH6533 Four-Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator Literature Number: SNOS985C October 10, 2011 LMH6533 Four-Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM Oscillator General Description

ntc 100-9

Abstract: vr photo NTC 005 photo devices 201 photo
Contextual Info: Inventory o f discrete standard Types 9.8. Silicon switching diode Type BA 182 A p p lic a tio n Reverse v o lta g e M a x . perm issible fo rw a rd current l r m A ^ (V) 35 V H F -s w itc h in g diode Reverse cu rren t 1R (n A ) 100 <100 9.9. Optoelectronic Semiconductor devices

Contextual Info: SM 5400.SM 5408 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5400.SM 5408 Forward Current: 3 A

Diode 5059

Contextual Info: SM 5059 . SM 5063 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 5059.SM 5063 Forward Current: 2 A

w12 sot 23

Abstract: W12 sot23 CMPZDA33V zener diode 3.6
Contextual Info: Central Sem iconductor Corp. CMPZDA3V6 THRU CMPZDA33V DUAL ZENER DIODE 3.6 VOLTS THRU 33 VOLTS 350mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZDA3V6 Series Silicon Dual Zener Diode is a high quality voltage regulator, connected in a common anode

Contextual Info: SA 261.265 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter /5 Surface mount diode Fast silicon rectifier diodes SA 261.265 Forward Current: 2 A

Contextual Info: SK1302 PECL/ LVPECL - to - CML Translator/Laser Diode Driver ADVANCED HIGH-PERFORMANCE PRODUCTS Description Features The SK1302 is a high speed current switch for driving a semiconductor laser diode in optical transmission applications. The output current, or modulation current

driver 3525

Abstract: SK1302
Contextual Info: SK1302 PECL/ LVPECL - to - CML Translator/Laser Diode Driver ADVANCED HIGH-PERFORMANCE PRODUCTS Description Features The SK1302 is a high speed current switch for driving a semiconductor laser diode in optical transmission applications. The output current, or modulation current

ESD113-B1-02ELS

Abstract: MIPI firewire
Contextual Info: TVS Diode Transient Voltage Suppressor Diodes ESD113-B1-02ELS Bi-directional Ultra Low Capacitance ESD / Transient Protection Diode ESD113-B1-02ELS Data Sheet Revision 1.1, 2013-02-06 Final Power Management & Multimarket Edition 2013-02-06 Published by Infineon Technologies AG

Contextual Info: 1N2974B asi 10 WATTZENER DIODE DESCRIPTION: The 1N2974B is a Diffused Silicon Power Zener Diode Designed for General Purpose Industrial and Military Power Supply Applications. FEATURES: • Low Z Zt - 3H Maximum • Hermetic DO-41 Package MAXIMUM RATINGS P diss

TSHG8400

Abstract: 08MAR06
Contextual Info: TSHG8400 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHG8400 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant

Contextual Info: TSHF5410 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5410 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant

Contextual Info: BAS31-V Vishay Semiconductors Small Signal Switching Diode, Dual Serial Features • Silicon Epitaxial Planar Diode • For general purpose switching applicae3 tions • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

1N829A

Abstract: 2300C
Contextual Info: 1N829A asii TEMP COMPENSATED ZENER DIODE PACKAGE STYLE DO-35 DESCRIPTION: The ASI 1N829A is a Silicon Temperature Compensated Zener Diode Designed for High Stability Voltage Reference Applications. MAXIMUM RATINGS 400 mW @ Ta = 50 0C P tot Tj -55 0C to +175 0C

SM4001-SM4007

Abstract: J17G
Contextual Info: SM 4001.SM 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007  5  

TSHF5210

Contextual Info: TSHF5210 Vishay Semiconductors High Speed Infrared Emitting Diode in T-1¾ Package Description TSHF5210 is a high speed infrared emitting diode in GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. TSHF5210 combines high speed with high radiant