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    BACK TUNNEL DIODE Search Results

    BACK TUNNEL DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    BACK TUNNEL DIODE Datasheets Context Search

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    back Tunnel diode

    Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


    Original     		PDF MIL-PRF-19500 MIL-PRF-35834 back Tunnel diode mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes

    MBD5057

    Abstract: No abstract text available
    Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized


    Original     		PDF MIL-PRF-19500 MIL-PRF-35834 MBD5057

    "back diode"

    Abstract: back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode
    Text: ASTD1020 PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD1020 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times


    Original     		PDF ASTD1020 ASTD1020 ASTD1020-XX "back diode" back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode

    DATASHEET TUNNEL DIODE

    Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
    Text: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times


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    back Tunnel diode

    Abstract: "back diode" tunnel diodes tunnel diode specifications
    Text: ASTD1020-00 PLANAR TUNNEL BACK DIODE DESCRIPTION: PACKAGE STYLE DIE FORM The ASTD1020-00 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times


    Original     		PDF ASTD1020-00 ASTD1020-00 back Tunnel diode "back diode" tunnel diodes tunnel diode specifications

    TUNNEL DIODE

    Abstract: tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


    Original     		PDF MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 TUNNEL DIODE tunnel diodes MP1301 MP1305 "tunnel diode" chip assembly MP1451 MP1303 "tunnel diode" wire bonding MP1300 MP1452

    MP1601

    Abstract: MP1303 MP1301
    Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304


    Original     		PDF MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1601 MP1303 MP1301

    H31D

    Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
    Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    LXHL-LM5C

    Abstract: Amicon luxeon 1 watt luxeon 1w LXHL-Lr5C luxeon 3 watt amicon adhesive kit AB05 LXHL-LB5C UV led diode 200 nm peak 1W
    Text: power light source TM Luxeon V Star Technical Data DS30 Luxeon is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.


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    MC1322x

    Abstract: IEEE-11073 datasheet HCS08/HCS12 multilink HCS08 MC13192 QE128 WEIGHT_SCALE pc to pc communication using zigbee back Tunnel diode zigbee health
    Text: Contents About This Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Audience . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    point contact diode

    Abstract: back Tunnel diode "Point Contact Diode" "back diode" DIODE D
    Text: DETECTORS O ve rvie w . Back Diode D e te c to rs. Tunnel Diode D e te c to rs. Biased Schottky D e te cto rs.


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    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    MBD3057-C18

    Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
    Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS


    OCR Scan     		PDF MIL-STD-19500 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54 MBD-2057-H20 MBD3057-C18 MBD2057-C18 DIODE e26 back Tunnel diode MBD1057

    MBD3057-C18

    Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
    Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability


    OCR Scan     		PDF MIL-STD-195 MBD-1057-C18 MBD-1057-T80 MBD-1057-T54 MBD-1057-H20 MBD-1057-E26 MBD-2057-C18 MBD-2057-T80 MBD-2057-T54temperature, MBD3057-C18 MBD5057-C18 back Tunnel diode MBD-3057-C18 MBD5057 MBD2057-C18 MBD1057

    back Tunnel diode

    Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
    Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth


    OCR Scan     		PDF MIL-STD-19500 -65to+ 17dBmCW MBD-1050-C19 MBD-1050-A20 MBD-1050-T80 MBD-1050-T54 MBD-1050-H20 MBD-1050-E26 MBD-205s back Tunnel diode "back diode" Germanium power DIODE tunnel MBD back diode

    V2501

    Abstract: Virtech Microwave Innowave Microwave detector diodes 18 GHz V1200 V1000 V1100 V2601 v2502 tunnel diodes
    Text: 4Ö02789 Tb INNOWAVE Ì T Ì H&QE7&1 • □ ODGDS'ì 2 l ~ co I 59 ^ D A^ , J DETECTOR DIODES INNOÜJAVE SC H O n K Y BARRIER DIODES PLANAR TUNNEL (BACK DIODES Features: Features: • • • • • Planar Passivated Construction. Choice of Bias Conditions and Offsets.


    OCR Scan     		PDF MIL-STD-883 V2700 V2701 V2702 V2703 V2704 V2501 Virtech Microwave Innowave Microwave detector diodes 18 GHz V1200 V1000 V1100 V2601 v2502 tunnel diodes

    MBD3057-C18

    Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
    Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth


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    MBD3057-C18

    Abstract: back Tunnel diode
    Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d


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    Tunnel diode

    Abstract: BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" 1N3712 tunnel diode specifications GE "TUNNEL DIODE" BD-406
    Text: BACK DIODES GENER AL PURPOSE F o r M ix e r s , D e te c to rs and S w itc h in g C irc u its GE Type’ Rever.'.e Voltage Min, Ip c Peak Point Current Max. mA Capacitance Max. (pF) t' - Ip = 90 .t 10 mV (mA) V r2 t mA (mV) V r, (n Jfi Forward max (mV) (a) V f ,


    OCR Scan     		PDF TD251-256, 51A-256A, TD261/270 1N4090 1N3712 Tunnel diode BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" tunnel diode specifications GE "TUNNEL DIODE" BD-406

    tunnel diode General Electric

    Abstract: 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric BD400 TUNNEL DIODE tunnel diode high frequency 1N3712
    Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


    OCR Scan     		PDF TD400 BD400 tunnel diode General Electric 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric TUNNEL DIODE tunnel diode high frequency 1N3712

    1N3716

    Abstract: 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent
    Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


    OCR Scan     		PDF TD400 BD400 1N3712-21 1N3716 1N3717 1N3712 tunnel diode General Electric 1N3720 1N3714 1N3713 1N3719 1N3718 1N3712 equivalent

    oscillator tunnel diode

    Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
    Text: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A


    OCR Scan     		PDF 23HR400BD oscillator tunnel diode tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"

    Germanium Power Diodes

    Abstract: BD3 tunnel diode Germanium Power Devices
    Text: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage


    OCR Scan     		PDF 350mv) Germanium Power Diodes BD3 tunnel diode Germanium Power Devices

    BD3 diode

    Abstract: BD3 tunnel diode BD3 diode BD3, transistor BD6 tunnel diode General Electric BD5 diode "back diode" 160 germanium transistor germanium diodes forward drop TUNNEL DIODE
    Text: Germanium I BD1-7 I Diodes The G eneral Electric types 4JFB D 1-7 are germ anium back diodes which m ake use of the q u an tu m m echanical tunneling phenom enon, thereby attaining a very low forw ard voltage d rop and elim inating charge storage effects. They feature closely


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