1842M Search Results

JCIQ-1880D

Contextual Info: I&Q Demodulator JCIQ-1880D Typical Performance Data FREQUENCY LO=1842MHz MHz RF I&Q 1842.30 1842.55 1842.79 1843.04 1843.29 1843.54 1843.78 1844.03 1844.20 1844.53 1844.77 1845.02 1845.27 1845.52 1845.76 1846.01 1846.26 1846.51 1846.75 1847.00 0.30 0.55

1090Mhz LNA

Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A

X3DC18E2S

Contextual Info: Model X3DC18E2S Rev B PRELIMINARY Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

Contextual Info: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

hall marking code A04

Abstract: INTELDX4 write-through YSS 928
Contextual Info: INTEL486 PROCESSOR FAMILY • lntelDX4TM P ro c e s s o r — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant I/O Buffers

SPB2026Z

Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Contextual Info: Advanced Information SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

FDS 4468

Abstract: HBT 01 - 04G INTEL 486 sx sl pinout 240950 JVC 4580 fds 4418 TOT - 4301 INTEL DX4 241199 Intel DX4TM
Contextual Info: intj, INTEL486 PROCESSOR FAMILY • Write-Back Enhanced lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant

BP65R1505S112

Contextual Info: DIELECTRIC FILTER SPECIFICATION China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: BP65R1505S112 www.sipatsaw.com 1. MODEL NUMBER MODEL NUMBER. CUSTOMER PART NO. BP65R1505S112 2. TEST CONDITION 2-1 TYPICAL CONDITION

MQE9

Abstract: 74674 HITEC 623 Hitachi DSA002752 GSM53 Nippon capacitors
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: " DC-DC ECLB40W ECLB40W Series Features: • • • • • • • • • • • • • 40W isolated output Efficiency to 91% 2.05" x 1.2 x 0.4" six sided sheild metal case 4:1 input range Regulated outputs Fixed switching frequency Input under voltage protection

315 MHz Power Amplifier

Contextual Info: Model X3DC18E2S RevA Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as

gi 9644 diode

Abstract: INTELDX4 write-through
Contextual Info: in te i, MILITARY Intel 486 PROCESSOR FAMILY • Write-Back Enhanced ln t e l D X 4 ™ Processor — Up to 100-MHz Operation -Speed-M ultiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Write-Back Cache — Integrated Floating-Point Unit

GSM400

Abstract: RF8889A RFMD ASM RF8889 RFMD LTE Band 40
Contextual Info: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features           GSM Rx3 TRX1 Broadband Performance Suitable for all Cellular Modulation Schemes up to

Contextual Info: Model X3DC18E2S Rev B Doherty Combiner b Description The X3DC18E2S is a low profile, high performance Doherty Combiner in a new easy to use, manufacturing friendly surface mount package. The X3DC18E2S is designed particularly for Doherty Amplifier applications, where tightly controlled phase and amplitude imbalance as

HD155121F

Abstract: Common PCN Handset Specification Phase 74674 GSM LNA BFP420 GSM ic gsm transceiver transceiver gsm MA 68698 pcn 8.5
Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems ADE-207-265A Z 2nd Edition May 1999 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

Contextual Info: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features GSM Rx3 Broadband Performance Suitable for all Cellular Modulation Schemes up to 2.7GHz TRX1  Excellent Insertion Loss and

Contextual Info: HD155121F RF Transceiver IC for GSM and PCN Dual band cellular systems HITACHI ADE-207-265 Z) 1st Edition November 1998 Description The HD155121F is a RF transceiver IC for GSM and PCN dual band cellular systems, and integrates most of the low power silicon functions of a transceiver. The HD155121F incorporates two bias circuits for RF

transistor j5

Abstract: 45W AMP PH1819-45A Wireless power
Contextual Info: Wireless Power Transistor 45 Watts 1805-1880 MHz PH1819-45A PH1819-45A Wireless Power Transistor 45 Watts, 1805 - 1880 MHz 1 Features • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor rd -28 dBc Typical 3 IMD at 45 Watts PEP Common Emitter Class AB Operation

SPB-2026

Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Contextual Info: SPB-2026Z Product Description 0.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is

HBT 01 - 04G

Abstract: HBT 00 - 04G INTEL DX4 86-1-S smi LT 9636 INTEL DX2 1184N gi 9214 80286 instruction set 22-31N
Contextual Info: in te i MILITARY Intel486 PROCESSOR FAMILY • lntelDX4™ Processor — Up to 100-MHz Operation — Speed-Multiplying Technology — 32-Bit Architecture — 16K-Byte On-Chip Cache — Integrated Floating-Point Unit — 3.3V Core Operation with 5V Tolerant

SPB-2026Z

Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Contextual Info: SPB2026Z SPB2026Z 0.7GHz to 2.2GHz 2W InGaP Amplifier 0.7GHz to 2.2GHz 2W InGaP AMPLIFIER Package: SOF-26 Product Description Features RFMD’s SPB2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated

LTC6946-3

Abstract: LTC6946 1810MHz VCO 16 pin TB 112MA sdi 0818 LTC5541 QFN-28 LTC6946IUFD-1 CI LM 4800 Marking Code h06
Contextual Info: LTC6946 Ultralow Noise and Spurious 0.37GHz to 5.7GHz Integer-N Synthesizer with Integrated VCO DESCRIPTION FEATURES n n n n n n n n n n n n Low Noise Integer-N PLL with Integrated VCO –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

NGK Spark Plug

Abstract: NTK 20 mHZ ntk filter 2808 transistor DCS1800 MFE1842BBU22 SPARK S21L
Contextual Info: COMMUNICATION MEDIA COMPONENTS GROUP NGK SPARK PLUG CO.,LTD. 2808 IWASAKI, KOMAKI-SHI, AICHI, JAPAN 485-8510 Dielectric Filter with Attenuation Pole P / N : MFE1842BBU22 Application : DCS1800 Rx Features 1.High attenuation for using pole in stop band. 2.Extreme mechanical stability