5SYA2039 Search Results

5SMY 12J1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 6500 V 600 A ABB HiPakTM IGBT Module 5SNA 0600G650100 Doc. No. 5SYA1558-02 Jan 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • AlSiC base-plate for high power cycling capability

the calculation of the power dissipation for the igbt and the inverse diode in circuits

Abstract: "the calculation of the power dissipation for the igbt and the inverse diode in circuits" ABB IGBT ABB IGBT inverter 5SYA2042 5sna 1200e330100 transistor book 5SYA2043 ABB IGBT part number explanation
Contextual Info: Application Note Applying IGBTs Applying IGBTs Application Note Björn Backlund, Raffael Schnell Ulrich Schlapbach, Roland Fischer Evgeny Tsyplakov ABB Switzerland Ltd Semiconductors February 08 Table of Contents: 1 APPLYING IGBTS . 3

5SYA2042

Abstract: 5SNA0400J650100
Contextual Info: VCE IC = = 6500 V 400 A ABB HiPakTM IGBT Module 5SNA 0400J650100 Doc. No. 5SYA 1592-03 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package AlSiC base-plate for high power cycling capability AlN substrate for low thermal

5SNA1200G450300

Abstract: 1200G450300 cosmi
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

IC 7400 configuration

Abstract: 5SNA1200G450300
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

cosmi

Contextual Info: Data Sheet, Doc. No. 5SYA 1407-05 06-2012 5SNA 1500E330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 1500 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

IC 7400 configuration

Contextual Info: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 Doc. No. 5SYA 1598-03 Apr 12 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

5SNA1000G450300

Abstract: cosmi 5SNA 1000G450300
Contextual Info: VCE IC = = 4500 V 1000 A ABB HiPakTM IGBT Module 5SNA 1000G450300 PRELIMINARY Doc. No. 5SYA 1597-00 Oct 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Data Sheet, Doc. No. 5SYA 1426-00 05-2012 5SNG 0250P330305 ABB HiPakTM IGBT Module VCE = 3300 V IC = 250 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E330100 Doc. No. 5SYA1556-04 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

IGBT CHIP 600V ABB

Contextual Info: VCE IC = = 1200 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E120100 PRELIMINARY Doc. No. 5SYA1561-00 Apr 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: VCE IC = = 4500 V 650 A ABB HiPakTM IGBT Module 5SNA 0650J450300 PRELIMINARY Doc. No. 5SYA 1598-00 Nov 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

1200G450350

Abstract: 5SNA1200G450350
Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability

5SNA2400E170305

Abstract: 5SYA2042
Contextual Info: Data Sheet, Doc. No. 5SYA 1417-02 04-2012 5SNA 2400E170305 ABB HiPakTM IGBT Module VCE = 1700 V IC = 2400 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1695-01 08 13 5SMY 12M1730 IGBT-Die VCE = 1700 V IC = 150 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage

Contextual Info: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power

Contextual Info: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  High power density  AlSiC base-plate for high power cycling

ic 082 specifications

Contextual Info: VCE IC = = 1700 V 1800 A ABB HiPakTM IGBT Module 5SNA 1800E170100 Doc. No. 5SYA 1554-03 Nov. 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power

Contextual Info: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

5SLD1000N330300

Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance