DF MARKING CODE SMD TRANSISTOR Search Results

TRANSISTOR SMD MARKING CODE 207

Abstract: X1N60S5 X1N60 DF marking code smd transistor 207a N60S5
Contextual Info: SIEMENS SPPX1N60S5 SPBX1N6QS5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos on in TO 220 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • éviàt rated • 150°C operating temperature Type SPPX1N60S5

Contextual Info: SIEMENS SPNX6N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best /?DS on ¡n SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS SPNX6N60S5 600 V

BYT 56 diode

Abstract: smd transistor marking TQ smd diode JD BYt 32
Contextual Info: SIEM EN S SPPX4N60S5 SPBX4N6QS5 Target data sheet Coot MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT05154 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPPX4N60S5 ^DS 600 V b 3.2 A %S on

TRANSISTOR SMD MARKING CODE ag

Abstract: smd TRANSISTOR code AJ transistor marking smd 7c smd marking wds transistor smd marking AJ 7C SMD TRANSISTOR smd transistor marking AJ TRANSISTOR SMD MARKING CODE AJ
Contextual Info: SIEMENS SPNX2N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best Ffos on in SOT 223 • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 ,4 3 • 150°C operating temperature G D S Type

VPT09051

Abstract: transistor ag qs VPT09050
Contextual Info: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A

SOT89 MARKING 2E

Abstract: SOT89 MARKING 2d marking codes transistors sot-223 SOT-23 MARKING T36 bt1 marking DA SOT-89 df SOT-223 DA SOT-89 NPN MARKING 2D SOT-89 PMBT5551
Contextual Info: HIGH VOLTAGE SMI TRANSISTORS DESCRIPTION • Philips Components produces a variety o f chip geometries in order to offer high voltage transistors w ith a broad range of current handling capabilities. The result is a device which not only fulfills high voltage application

VPT09051

Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Contextual Info: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity

AG qd transistor SMD

Abstract: transistor ag qs
Contextual Info: SIEMENS SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPUX6N60S5 600 V 4.5 A Pin 1

transistor marking smd 7c

Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
Contextual Info: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3

varistor svc 561 14

Abstract: Z5U 103M 1KV samwha capacitor part numbers SVC 561 14 varistor 472m varistor svc 471 14 SVC 561 10 Varistor sck 055 varistor 332m varistor SVC 561
Contextual Info: Contents_ Company History 2 Multi Layer Ceramic Capacitors SMD Type 5 SMD Type-High Voltage 13 Automotive Application 26 Radial & Axial 38 Chip Beads & Inductors Chip Ferrite Beads 46 Chip Ferrite Beads Arrays 65 Chip Ferrite Inductors 68 Chip Power Inductors

20n60s5

Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
Contextual Info: SIEMENS SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances

Contextual Info: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3

DIODE JS.9 smd

Contextual Info: SIEMENS SPP03N60S5 SPB03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

SMD Code 12W SOT-23

Abstract: CXT5401 BK SMD MARKING CODE 4E C2TA44 SMD MARKING CODE FE sot89 marking code C3E SOT-89 npn smd bc550 smd SMD Code 12W SOT23 marking BH SOT-223 marking da sot89
Contextual Info: SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW IM MW MM 30 15 30 e k « >Vcf (VOLTS) m *lFI (VOLTS) MAX 10 15 20 _ 1.0 3.0 NF Vet (SAD< »•c (VOLTS) (mA) MAX C« (pF) MAX (MHz) MM m MAX 0.4 1.7 600 6.0 10 MARKING SttVLAR CODE LEADED

transistor ag qs

Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8
Contextual Info: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ

VPT09050

Abstract: VPT09051
Contextual Info: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A

Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances

FAG 32 diode

Contextual Info: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

Contextual Info: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

03N60S5

Contextual Info: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity

TDA 1500

Abstract: TDA6930X AFC marking carrier recovery external tv tuner Q67007-A5217 tank if SMD MARKING CODE TDA 1195
Contextual Info: SIEMENS Multistandard Video and Sound IF TDA 6930 X Preliminary Data Features • • • • • • • • • Multistandard application for all terrestrial standards FPLL video demodulator Delayed tuner AGC voltage output AFC signal output Quasi parallel sound

Contextual Info: SIEM ENS TDA 6900, TDA 6920 TDA 6930 Overview TV Front-End Design with ICs TDA 6900/6920/6930 Three new ICs from Siemens for TV front-ends feature a level of integration that goes well beyond the state of the art. Designers can thus cut costs while increasing

smd transistor A1t

Abstract: SMD a1T Transistor transistor SMD 33g TRANSISTOR SMD MARKING CODE 3t1 A1t smd transistor TRANSISTOR A1t smd diode A1T A1T TRANSISTOR
Contextual Info: BSP 372 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 0.8 .2.0 V Type Vbs b R DS(on) Package BSP 372 100 V 1.7 A 0.31 n SOT-223 Type BSP 372 Ordering Code Q 67000-S300 Marking Tape and Reel Information

Contextual Info: DF N1 01 0D -3 PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench