VPT09051
Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
Contextual Info: In fin eon 01N50M2 01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity
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spux7n60s5/spdx7n60s5spu01n50m2spd01n50m2vpt09050+5vpt09051p-t025101n50m2q67040-s4324diode marking code 623
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P-TO251-3-1
Abstract: P-TO252 SPD01N50M2 SPU01N50M2
Contextual Info: 01N50M2 01N50M2 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type COOLMOS Power Semiconductors
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spu01n50m2spd01n50m2p-to251-3-101n50m2+3q67040-s4324p-to252q67040-s4325
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P-TO251-3-1
Abstract: P-TO252 SPD01N50M2 SPU01N50M2 01N50M2 DIODE MARKING CODE 623
Contextual Info: 01N50M2 01N50M2 Target data sheet D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity
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spu01n50m2spd01n50m2spux7n60s5/spdx7n60s5p-to251-3-1+4p-to25201n50m2q67040-s4324diode marking code 623
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Q67040-S4326
Abstract: SPN01N50M2 GPS05560 VPS05163 SPn01N50
Contextual Info: 01N50M2 Target data sheet D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS • Former development designation:
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spn01n50m2vps05163spux7n60s5/spdx7n60s5ot-223+401n50m2q67040-s4326gps05560spn01n50
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