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    SPD01N50M2 Search Results

    SPD01N50M2 Datasheets (3)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPD01N50M2
    Infineon Technologies Transistor Mosfet N-CH 550V 0.8A 3P-TO252 Original PDF 121.79KB 9
    SPD01N50M2
    Infineon Technologies Cool MOS Power-Transistor Original PDF 88.74KB 7
    SPD01N50M2
    Infineon Technologies CoolMOS Power-Transistor Scan PDF 245.3KB 6

    SPD01N50M2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    VPT09051

    Abstract: VPT09050 SPD01N50M2 SPU01N50M2 DIODE MARKING CODE 623
    Contextual Info: In fin eon SPU01N50M2 SPD01N50M2 Target data sheet technologies Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/df rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    spux7n60s5/spdx7n60s5spu01n50m2spd01n50m2vpt09050+5vpt09051p-t025101n50m2q67040-s4324diode marking code 623 PDF

    P-TO251-3-1

    Abstract: P-TO252 SPD01N50M2 SPU01N50M2
    Contextual Info: SPU01N50M2 SPD01N50M2 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity Type COOLMOS Power Semiconductors


    Original
    spu01n50m2spd01n50m2p-to251-3-101n50m2+3q67040-s4324p-to252q67040-s4325 PDF

    P-TO251-3-1

    Abstract: P-TO252 SPD01N50M2 SPU01N50M2 01N50M2 DIODE MARKING CODE 623
    Contextual Info: SPU01N50M2 SPD01N50M2 Target data sheet D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated G,1 S,3 • Extreme dv/dt rated • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    spu01n50m2spd01n50m2spux7n60s5/spdx7n60s5p-to251-3-1+4p-to25201n50m2q67040-s4324diode marking code 623 PDF