DDR SDRAM 128MBIT 8MX16 Search Results

HY5MS5B6BLFP

Abstract: HY5MS5B6BL
Contextual Info: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

hynix mcp

Abstract: HY5MS5B6BL H5MS1262EFP 2Mx16
Contextual Info: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

822AT

Contextual Info: 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT Revision 1.3 April 2001 This docum ent is a general product description and is subject to change without notice. HY5DU28422AT/822AT/1622AT 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N

JESD-21C

Contextual Info: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 October 15, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2

PC1600U-25330-B1

Abstract: JESD-21C JESD21 ddr dimm pinout ddr sdram 128Mbit 8Mx16 PC2100 32MX7
Contextual Info: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 June 29, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2

sdram pcb layout gerber

Abstract: ddr sdram 128Mbit 8Mx16 pc133 sdram 512mb ECC unbuffered pc133 SDRAM DIMM PC133 SDRAM Unbuffered DIMM trace code micron label PC200U-25330B-1 JC42 sdram pc133 pcb layout guide micron sdram pc133 pcb layout guide
Contextual Info: DDR SDRAM Unbuffered DIMM Design Specification Revision 0.6 November 1999 JC-42.5 Item #:_ Prepared By Micron Technology and IBM DDR SDRAM Unbuffered DIMM Design Specification Page 2 Revision 0.6 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents

urst 1081

Contextual Info: 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 This document is a general product description and is subject to change without notice. 289 HY5DU28422T/822T/1622T 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D E S C R IP T IO N

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

W25X128

Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
Contextual Info: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM

winband

Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
Contextual Info: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM

512MB 8Mx32 DDR DRAM

Contextual Info: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,

Contextual Info: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)

Contextual Info: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM JUNE 2009 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/ received with data

IS43R16800CC

Abstract: 43R16800CC A3S56D zentel ddr sdram 128Mbit 8Mx16 40ETP
Contextual Info: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)

IS43R16800E

Contextual Info: IS43/46R16800E, IS43/46R32400E ADVANCED INFORMATION 4Mx32, 8Mx16 MAY 2011 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory

IS43R32400E

Abstract: IS43R32400E-5BLI IS43R16800E-6TL IS43R16800E
Contextual Info: IS43/46R16800E, IS43/46R32400E MARCH 2012 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/

IS43R16800E

Abstract: IS43R32400E-5BLI
Contextual Info: IS43/46R16800E, IS43/46R32400E FEBRUARY 2013 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/

IS43R16800E

Contextual Info: IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb DDR SDRAM FEBRUARY 2013 FEATURES DEVICE OVERVIEW •฀ VDD฀and฀VDDQ:฀2.5V฀±฀0.2V฀ •฀ SSTL_2฀compatible฀I/O •฀ Double-data฀rate฀architecture;฀two฀data฀transfers฀ per clock cycle

IS43R16800E

Contextual Info: IS43/46R16800E, IS43/46R32400E MARCH 2012 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/

IS43R16800E

Abstract: DDR SDRAM
Contextual Info: IS43/46R16800E, IS43/46R32400E JANUARY 2014 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory

Contextual Info: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 MARCH 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data

Contextual Info: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 SEPTEMBER 2008 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data

issi 8Mx16 SDRAM

Abstract: ISSI 346
Contextual Info: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 JULY 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data

Contextual Info: IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb Mobile DDR SDRAM FEATURES: • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver