DDR RAM MEMORY IC Search Results

sdram pcb layout ddr

Abstract: MB81P643287 ram memory rambus 86-PIN FCRAM
Contextual Info: High-End Memory for High-End Graphics 64M x32 DDR-SDRAM with Fast-Cycle RAM Core Technology–MB81P643287 ▲ Features • Double Data Rate (DDR) • Superset of DDR JEDEC standard • CMOS 8-bank x 256K-word x 32-bit Fast-Cycle Random Access Memory with DDR

W25X128

Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
Contextual Info: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM

VG37128162AT

Abstract: VG37128802AT
Contextual Info: VIS VG37128802AT VG37128162AT Preliminary CMOS DDR Synchronous Dynamic RAM Description The 128Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 134,217,728 bits. It is internally configured as a quad-bank DRAM. The 128Mb DDR SDRAM

ddr dimm pinout

Abstract: Kentron Technologies
Contextual Info: 64M X 72 REGISTERED DDR DIMM SDRAM DDR MODULE 512 MByte 64M x 72 DDR SDRAM Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 512 Megabyte Registered synchronous dynamic RAM module organized as 64M x 72 in a 184 pin Dual In-Line Memory Module (DIMM)

ddr dimm pinout

Abstract: kt327 DDR DIMM pinout micron 184
Contextual Info: 32M X 72 REGISTERED DDR DIMM SDRAM DDR MODULE 256 MByte 32M x 72 DDR SDRAM Registered 184 Pin DIMM Preliminary General Description: This memory module is a high performance 256 Megabyte Registered synchronous dynamic RAM module organized as 32M x 72 in a 184 pin Dual In-Line Memory Module (DIMM)

winband

Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
Contextual Info: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM

DDR200

Abstract: DDR266 W9412FADA-7 W9412FADA-75 W942516AH
Contextual Info: W9412FADA 128MB 16M x 64 DDR SDRAM DIMM 1. GENERAL DESCRIPTION The Winbond W9412FADA series are 16M x 64 Double Data Rate Synchronous Dynamic RAM (DDR SDRAM) memory modules. These modules consists of four pieces of W942516AH (64M x 16 bits) DDR SDRAMs and assembled on a JEDEC standard 184-pin DIMM PCB.

PC2100

Abstract: SL64A8Q64M8L-A75EW
Contextual Info: SL64A8Q64M8L-A75EW 64M X 64 Bits 512MB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A8Q64M8M-A75EW is a 64M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

Contextual Info: SL64A7M128M8L-A75EW 128M X 64Bits 1GB 200-Pin DDR SDRAM SO-DIMM (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A7M128M8L-A75EW is a 128M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

DDR333 256MB CL2.5

Abstract: TSOP-66 DDR333 W942508BH W9425GBDA-6 256mb ddr333 200 pin
Contextual Info: W9425GBDA-6 256MB 32M x 64 DDR SDRAM DIMM 1. GENERAL DESCRIPTION The W9425GBDA is a 256MB Double Data Rate Synchronous Dynamic RAM (DDR SDRAM) memory modules. It is organized in a 32M x 64 bit configuration using eight pieces of Winbond W942508BH (32M x 8 bits) DDR SDRAMs and assembled on a JEDEC standard 184-pin DIMM PCB.

DDR200

Abstract: DDR266 W942508BH W9451GBDA-7 W9451GBDA-75 winbond 64M x 8 dram
Contextual Info: W9451GBDA 512MB 64M x 64 DDR SDRAM DIMM 1. GENERAL DESCRIPTION The W9451GBDA is a 512MB Double Data Rate Synchronous Dynamic RAM (DDR SDRAM) memory modules. It is organized in a 64M x 64 bit configuration using eight pieces of Winbond W942508BH (64M x 8 bits) DDR SDRAMs and assembled on a JEDEC standard 184-pin DIMM PCB.

DDR333

Abstract: W942508AH W9451GBDA-6 DDR333 256MB CL2.5
Contextual Info: W9451GBDA-6 512MB 64M x 64 DDR SDRAM DIMM 1. GENERAL DESCRIPTION The W9451GBDA is a 512MB Double Data Rate Synchronous Dynamic RAM (DDR SDRAM) memory modules. It is organized in a 64M x 64 bit configuration using eight pieces of Winbond W942508AH (32M x 8 bits) DDR SDRAMs and assembled on a JEDEC standard 184-pin DIMM PCB.

DQ463

Abstract: "207b spd delay ic"
Contextual Info: SL72A7M128M8M-A75EW 128M X 72 Bits 1GB 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL72A7M128M8M-A75EW is a 128M x 72 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

PC2100

Abstract: SL72A8Q64M8M-A75EW
Contextual Info: SL72A8Q64M8M-A75EW 64M X 72 Bits 512MB 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL72A8Q64M8M-A75EW is a 64M x 72 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

DM 024

Abstract: PC200 RE36 SL64A4L128M8L-A10DW SL64A4L128M8L-A75DW SL64A4L128M8L-A75EW U28 113 Ck19 1604H
Contextual Info: SL64A4L128M8L-A###W 128M X 64 Bits 1GB 200-Pin DDR SDRAM SO-DIMM (PC1600/PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL64A4L128M8L-A###W is a 128M x 64 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

16M x 16 DDR TSOP-66

Abstract: TSOP-66 DDR200 DDR266 W9412FASA-7 W9412FASA-75 W942516AH
Contextual Info: W9412FASA 128MB 16M x 64 DDR SDRAM SO-DIMM 1. GENERAL DESCRIPTION The W9412FASA is a 128MB Double Data Rate Synchronous Dynamic RAM (DDR SDRAM) memory modules. It is organized in a 16M x 64 bit configuration using four pieces of Winbond W942516AH (16M x 16 bits) DDR SDRAMs and assembled on a JEDEC standard 200-pin SO-DIMM PCB.

lm814

Abstract: ID32-001
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

lm814

Abstract: cyble thelia TC59 A14A9
Contextual Info: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

DDR200

Abstract: DDR266A DDR266B DDR300 VG37256802AT
Contextual Info: VG37256402AT VG37256802AT VIS CMOS DDR Synchronous Dynamic RAM Description The 256Mb DDR SDRAM is a high-speed COMS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to achieve high-speed operation. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at

DQ463

Abstract: data sheet ic 4038 ic 4038 stacked so-dimm connectors PC200 SL72A8E32M4M-A10DW SL72A8E32M4M-A75DW SL72A8E32M4M-A75EW "207b spd delay ic"
Contextual Info: SL72A8E32M4M-A###W Advanced† 32M X 72 Bits 256MB 200-Pin DDR SDRAM SO-DIMM with ECC (PC1600/PC2100) FEATURES GENERAL DESCRIPTION • The SiliconTech SL72A8E32M4M-A###W is a 32M x 72 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).

lm814

Abstract: C1948
Contextual Info: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

Contextual Info: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

TC59LM818DMGI-40

Abstract: opcode
Contextual Info: TC59LM818DMGI-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 18-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM818DMGI is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR-FCRAMTM containing 301,989,888 memory cells. TC59LM818DMGI is organized as 4,194,304-words × 4 banks × 18 bits.

Contextual Info: TC59LM818DMGI-40 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 18-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM818DMGI is a CMOS Double Data Rate Fast Cycle Random Access Memory DDR-FCRAMTM containing 301,989,888 memory cells. TC59LM818DMGI is organized as 4,194,304-words × 4 banks × 18 bits.