DDG34G Search Results

CAT28C16A

Abstract: 28C16A CAT28C16ANI-20T MS-013
Contextual Info: C AT28C 16A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: DATA Polling ■ Low Power CMOS Dissipation: -A c tiv e : 25 mA Max. -S ta n d b y: 100 fiA Max. ■ Hardware Write Protection ■ CMOS and TTL Compatible I/O

TDB 1033

Abstract: 28C17A CAT28C17A CAT28C17ANI-20T
Contextual Info: CAT28C 17A 16K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200 ns ■ End of Write Detection: -D A TA'Polling -R D Y /B S T Pin ■ Low Power CMOS Dissipation: -Active: 25 mA Max. -Standby: 100 jiA Max. ■ Hardware Write Protection ■ Simple Write Operation:

28c512

Abstract: 28 pin 28c512 1N914 CAT28C512 CAT28C513 PARALLEL E2PROM
Contextual Info: C= L _ V " S T " Advanced C A T 2 8 C 5 1 2 /5 1 3 512K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P age Load Timer ■ Low Power CMOS Dissipation: -Active: 50 mA Max.

A15C

Abstract: CAT28F001
Contextual Info: 'Bi ci L_Y s ~r Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 jiA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year

Contextual Info: fllBbb?! QGÜ3MQ7 TMQ M S E K G S1E » se MIKRQn SEMIKRON INC Thyr istor V rsm V drm V rrm Diode V rsm V rrm V V V 1500 1400 2000 1700 1600 2500 SEMIPACK 1 IMRMS Tea se = 90 °C (R.M.S. motor ci irrent per phase) 175 A 105 A SKKH 56/14 SKKL 56/14 SKKH 56/16

CAT28F020

Abstract: A15C
Contextual Info: L icen sed In tel second so u rce CAT28F020 2 Megabit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Temperature Ranges ■ Fast Read Access Time: 70/90/120 ns ■ Low Power CMOS Dissipation: - Active: 30 mA max CMOS/TTL levels - Standby: 1 mA max (TTL levels)

CAT28C257

Abstract: 1N914 77777K
Contextual Info: C ATA LY S T Advanced CAT28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES • Automatic Page Write Operation: -1 to 128 Bytes in 5ms -P a g e Load Tim er ■ Fast Read Access Times: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 150 jiA Max.

ha 1555

Abstract: CAT28LV64 28LVl 28LV64
Contextual Info: C ATA LY S T P relim inary CAT28LV64 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6 V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:

CAT28F020

Contextual Info: C A T A L Y S T L icen sed In tel second source CAT28F020 2 Megabit CMOS Flash Memory FEATURES Commercial, Industrial and Automotive Temperature Ranges • Fast Read Access Time: 70/90/120 ns ■ Low Power CMOS Dissipation: - Active: 30 mA max CMOS/TTL levels

ha 1555

Abstract: 28C65B CAT28C65B 1N914 PARALLEL E2PROM
Contextual Info: ££ < = ^ T ^ L _ Y S - r CAT28C65B 64K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tem perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max.

czn 15

Contextual Info: C lA T A 1 _ Y s ~ r Advance Information CAT29FN002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES 100,000 Program/Erase Cycles and 10 Year Data Retention • Fast Read Access Time: 90/120 ns ■ Sectored Architecture: - One 16-KB Boot Sector •Top or Bottom Locations

ha 1555

Abstract: CAT28LV65 CAT28LV65NI-25T JII1177777 MS-013
Contextual Info: C A TA LY S T P re lim in a ry CAT28LV65 64K-Bit CMOS PARALLEL E2PROM FEATURES • 3.0V to 3.6V Supply ■ CMOS and TTL Compatible I/O ■ Read Access Times: - 250/300/350ns ■ Automatic Page Write Operation: - 1 to 32 Bytes in 5ms - Page Load Timer ■ Low Power CMOS Dissipation:

lz 21001

Abstract: 28F512 CAT28F512 200 ns CAT28F512NI-90T A12C A15C CAT28F512
Contextual Info: L icen sed In tel second source C A T2 8 F5 1 2 512K-Bit CMOS Flash Memory FEATURES • Commercial, Industrial and Automotive Tem ­ perature Ranges ■ Fast Read Access Time: 90/120/150 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA max CMOS/TTL levels

CZL - A8

Abstract: 1N914 28F001 A15C CAT28F001 112-KByte
Contextual Info: Preliminary CAT28F001 L icen sed In tel second source 1 Megabit CMOS Boot Block Flash Memory FEATURES • Deep Powerdown Mode — 0.05 |xA lcc Typical — 0.8 |xA lpp Typical ■ Hardware Data Protection ■ Electronic Signature ■ 100,000 Program/Erase Cycles and 10 Year

CAT28C256

Abstract: 1N914 28C256 28C256-12 28C256-15 28C256-20
Contextual Info: CATALYST CAT28C256 256K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 120/150/200 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 25 mA Max. -S tan d b y: 150 jiA Max.

CAT28F002

Contextual Info: CAT28F002 L icen sed In tel second source 2 Megabit CMOS Boot Block Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns Electronic Signature ■ On-Chip Address and Data Latches 100,000 Program/Erase Cycles and 10 Year Data Retention ■ Blocked Architecture:

28F020

Abstract: A15C CAT28F020 a5c capacitor PLCC 32 intel package dimensions
Contextual Info: ££ Cost E ffective Solution fo r the 2 MB F lash C A T 2 8 F0 1 5 < = ^ T ^ L _ Y S - r L icen sed In tel second source 1.5 Megabit CMOS Flash Memory FEATURES • Fully Compatible to 2 MB Flash 28F020 - No hardware or software changes Stop Tim er for Program/Erase

CAT28F002

Abstract: LPP3 lN635
Contextual Info: CAT28F002 L icen sed In tel second source 2 Megabit CMOS Boot Block Flash Memory FEATURES Fast Read Access Time: 90/120/150 ns Electronic Signature On-Chip Address and Data Latches 100,000 Program/Erase Cycles and 10 Year Data Retention Blocked Architecture:

29F002T

Abstract: Sector11
Contextual Info: ££ Advance Information < = ^ T ^ L _ Y S -r CAT29F002 2 Megabit CMOS 5V Only Sectored Flash Memory FEATURES • 100,000 Program/Erase Cycles and 10 Year Data Retention ■ Fast Read Access Time: 90/120 ns ■ Sectored Architecture: - One 16-KB Boot Sector

28F002BX

Abstract: CAT28F002 CAT28F150B
Contextual Info: C ost E ffe c tiv e S o lu tio n fo r th e 2 MB F la sh 'B i < n CAT2 8 F150 _ l y s ~ r L icen sed In tel second source 1.5 Megabit CMOS Boot Block Flash Memory FEATURES • Fast Read Access Time: 90/120/150 ns Electronic Signature ■ On-Chip Address and Data Latches