DBB3 Search Results

A43L0616A

Abstract: A43L0616AV
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001

Flash MCp nand DRAM 107-ball

Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Contextual Info: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM

Contextual Info: Pr E2G1050-17-X1 el im y 4-Bank ¥ 4,194,304-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62400/H is a 4-bank ¥ 4,194,304-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

active suspension

Abstract: MD56V62800A
Contextual Info: Pr E2G1054-18-62 el im y 4-Bank ¥ 2,097,152-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank ¥ 2,097,152-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and

dba1

Abstract: VG3617161ET
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

MD56V62160

Contextual Info: Pr E2G1052-17-X1 el im y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MD56V62160/H is a 4-bank ¥ 1,048,576-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs

8X13

Abstract: A43L0632
Contextual Info: A43L0632 Preliminary 512K X 32 Bit X 2 Banks Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 1, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

EDI416S4030A

Contextual Info: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

WED416S8030A

Contextual Info: WED416S8030A 2M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The WED416S8030A is 134,217,728 bits of synchronous high data rate DRAM organized as 4 x 2,097,152 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,

Contextual Info: ESMT M52D16161A SDRAM 512K x 16Bit x 2Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency 1, 2 & 3 Burst Length (1, 2, 4, 8 & full page)

M12L64164A

Contextual Info: ESMT M12L64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y ORDERING INFORMATION PRODUCT NO. JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3

dbb4

Contextual Info: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control

Contextual Info: ESMT M52S128324A Revision History Revision 1.0 May. 30 2006 -Original Revision 1.1(Jun. 20 2006) -Modify tRC and tRFC spec Revision 1.2(Mar. 02 2007) - Delete BGA ball name of packing dimensions Elite Semiconductor Memory Technology Inc. Publication Date: Mar. 2007

Contextual Info: ESMT M12L64164A Revision History Revision 1.0 13 Dec. 2001 - Original Revision 1.1 (10 Jan. 2002) - Add -6 spec Revision 1.2 (30 Jan. 2002) - Delete Page44 PACKING DIMENSION 54-LEAD TSOP(II) SDRAM (400mil) (1:4). Revision 1.3 (26 Apr. 2002) - tRFC : 60ns. (Page5)

dba1

Abstract: MS82V16520 QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MD56V62400

Abstract: MD56V62400H TSOPII54
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

K4S561633C

Abstract: K4S561633C-RL
Contextual Info: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).

MD56V62320

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control

Contextual Info: www.fairchildsemi.com FMS9884A Graphics Digitizer 3x8-Bit, 108/140 Ms/s Triple Video A/D Converter with Clamps Features • • • • • • • • PLL. Output data is released through either one port at full rate or both ports, each running at half-rate. Setup and control

Contextual Info: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with

8X13

Abstract: A43E06321
Contextual Info: A43E06321 Preliminary 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue July 21, 2005 Preliminary July, 2005, Version 0.0

A43E16161

Abstract: A43E16161V
Contextual Info: A43E16161 Preliminary 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0

rca ca 3079

Abstract: RCA 3079 MS82V48540 MS82V48540-7 MS82V48540-8 MT53B768M32D4NQ-053 WT:B
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株