DATA SHEET OF IGBT Search Results

HT12E HT12D

Abstract: 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171
Contextual Info: Issued September 2001 302-1000 Data Packs A-K Data Sheet RS data sheet/semiconductor manufacturers data sheet index Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

HT12E HT12D

Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
Contextual Info: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

Contextual Info: Table of Contents Power MOSFET Numeric Data Sheet Listing and Selector Guide Chapter 1: Power MOSFETs Page Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

junction diode

Abstract: APT15D60B DSA002965
Contextual Info: Defining Diode Data Sheet Parameters Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 When consulting a data sheet for specifications of a part, it is, of course, important to take the meaning intended by the authors of the data sheet. The importance of this obvious idea plays itself out in the ability to make wise part selections in the course of a new design or in the search

Switching Controllers

Contextual Info: Table of Contents Page Numeric Data Sheet Listing INTERFACES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

D-12

Abstract: IRGBC20S
Contextual Info: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.

OF IGBT

Abstract: FZ600R65KF1 rthjc IGBT eupec module igbt
Contextual Info: Application Note Date: 12.05.2004 AN-Number: AN-2004-01 Page 1 Department: SM TM New RthCH data sheet values With the release of a new data sheet software for IGBT modules in 2003 the ‘thermal resistance case to heat-sink per module’ is supplemented by the therein included values for the ‘thermal

SDT06S60

Abstract: SPP11N60C3 A66762-A4013-A58 Datenbuch transistor book SIL00036 Transistor Datenbuch datenbuch dioden halbleiter datenbuch Explanation of Parameters Infineon 2002
Contextual Info: Explanation, V1.0, Apr. 2002 Explanation of Data Sheet Parameters Power Management & Supply N e v e r s t o p t h i n k i n g . Erläuterung der Datenblattwerte Explanation of Data Sheet Parameters Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

g20n60

Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

G12N60b3

Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
Contextual Info: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

g20n60

Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

HGT1S20N60C3S9A

Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

PVI5013R

Abstract: PVI5013RS PVI5013RS-T
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. 1.1041 Series PVI5013R Solid-State Opto-Isolated MOSFET Gate Driver Dual-Channel 5V, 1.0µA PHOTOVOLTAIC ISOLATOR General Description PVI5013R Features The PVI5013R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly

SMCS6G25-60-1

Abstract: DC SERVO MOTOR closed loop pwm speed control SMCS6G25-60 SMC6G25-60 sensorless bdc motor speed control 210C 10Mohm resistor bdc motor
Contextual Info: SENSITRON SEMICONDUCTOR SMCS6G25-60 SMCS6G25-60-1 TECHNICAL DATA DATA SHEET 5006, REV.ENG 1.1 Preliminary Data Sheet SENSORLESS BRUSHLESS DC MOTOR CONTROLLER MODULE IN A POWER FLATPACK 25A, 600V FEATURES: • Two Quadrant Mode of Operation. • Fully integrated 3-Phase Sensorless Brushless DC Motor Control Subsystem includes power stage,

V30016

Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

PIC18 C18 codes usart

Abstract: 4539n hp 2539 Phase Induction motor speed control using dsPIC TRANSISTOR BC 187 PIC18F2439 PIC18F2539 PIC18F4439 PIC18F4539 PIC18FXX39
Contextual Info: PIC18FXX39 Data Sheet Enhanced FLASH Microcontrollers with Single Phase Induction Motor Control Kernel  2002 Microchip Technology Inc. Preliminary DS30485A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

Contextual Info: Data Sheet No. 10048 Series PVI5033R PHOTOVOLTAIC ISOLATOR General Description The PVI5033R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a monolithic integrated circuit photovoltaic

20N60A4D

Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D
Contextual Info: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

PVI5013R

Abstract: PVI5013RPBF PVI5013RS-TPBF
Contextual Info: Data Sheet No. PD10041 revJ Series PVI5013RPbF Photovoltaic Isolator General Description The PVI5013R Photovoltaic Isolator is a dual-channel, opto-isolated driver capable of directly driving gates of power MOSFETs or IGBTs. It util­izes a monolithic integrated circuit photovoltaic generator of novel

TA49372

Abstract: 20N60A4 equivalent
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12N60C3

Abstract: 12n60c3d HGT1S12N60C3DS HGT1S12N60C3DST HGTP12N60C3D TA49123 TA49182 TA49188 12n60c
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet September 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

HGTP12N60B3D

Abstract: 12N60B3 12n60b TA49188 TB334 12N60B3D HGT1S12N60B3DS HGT1S12N60B3DST HGTG12N60B3D
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet September 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60b3d

Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of