DATA SHEET OF IGBT Search Results

HT12E HT12D

Abstract: 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171
Contextual Info: Issued September 2001 302-1000 Data Packs A-K Data Sheet RS data sheet/semiconductor manufacturers data sheet index Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

Contextual Info: Table of Contents Power MOSFET Numeric Data Sheet Listing and Selector Guide Chapter 1: Power MOSFETs Page Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Switching Controllers

Contextual Info: Table of Contents Page Numeric Data Sheet Listing INTERFACES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

HGT1S20N60C3S9A

Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

V30016

Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

TA49372

Abstract: 20N60A4 equivalent
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60b3d

Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

TA49171

Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

G30N60A4

Abstract: hgtp30n60a4
Contextual Info: HGTG30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high

g30n60

Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at

12n60c

Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

J314

Abstract: DC MOTOR SPEED CONTROL USING IGBT IC A 3120 3 phase inverters circuit diagram igbt 6 pin smps power control ic A 3150 8 dip smps ic a J314 igbt ac motor speed control CIRCUIT DIAGRAM UPS
Contextual Info: HCPL-J314 0.6 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description The HCPL-J314 family of devices consists of an AlGaAs LED

20N60A4 equivalent

Contextual Info: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high

G30N60A4

Abstract: HGTG30N60A4
Contextual Info: HGTG30N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

OPTO ISOLATOR

Abstract: photovoltaic MOSFET driver opto-isolated control PVI5033R PVI5033RS PVI5033RS-T
Contextual Info: Data Sheet No. PD10048A Series PVI5033R Photovoltaic Isolator Solid-State Opto-Isolated MOSFET Gate Driver Dual-Channel, 5V, 5µA General Description The PVI5033R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a

HGTG20N60A4D

Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

g30n60b3

Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
Contextual Info: HGTG30N60B3 Data Sheet November 2000 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

MC68HC908mr

Abstract: freescale superflash
Contextual Info: MC68HC908MR32 MC68HC908MR16 Data Sheet M68HC08 Microcontrollers MC68HC908MR32 Rev. 6.1 07/2005 freescale.com MC68HC908MR32 MC68HC908MR16 Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

HGTG40N60B3 equivalent

Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a

G40N60B3

Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar