DATA SHEET OF IGBT Search Results
DATA SHEET OF IGBT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, | |||
| 54HC152J/B |
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54HC152 - 8 to 1 Line Data Selectors/Multiplexers |
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| 54LS298/BEA |
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54LS298 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH STORAGE - Dual marked (M38510/30909BEA) |
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| 54S153/BEA |
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54S153 - DATA SEL/MULTIPLEXER, DUAL 4-INPUT - Dual marked (M38510/07902BEA) |
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| 54F257/BEA |
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54F257 - DATA SEL/MULTIPLEXER, QUAD 2-INPUT, WITH 3-STATE OUTPUTS - Dual marked (M38510/33906BEA) |
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DATA SHEET OF IGBT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HT12E HT12D
Abstract: 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171
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ICM7216A1JI ICM722A1JL ICL8038BC ICL8038CC MAX038CP HT12E HT12D 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171 | |
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Contextual Info: Table of Contents Power MOSFET Numeric Data Sheet Listing and Selector Guide Chapter 1: Power MOSFETs Page Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 |
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SC-75 SC-89 OT-563 SC-70/SOT-323 SC-88/SOT-363 O-264 SC-74 | |
Switching ControllersContextual Info: Table of Contents Page Numeric Data Sheet Listing INTERFACES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 |
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HGT1S20N60C3S9A
Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S 150oC. 108ns 150oC HGT1S20N60C3S9A G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3 | |
V30016Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of |
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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 150oC. TA49178. V30016 | |
TA49372
Abstract: 20N60A4 equivalent
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HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC TA49372 20N60A4 equivalent | |
12n60b3d
Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. HGT1S12N60B3DS 12n60b3d HGTP12N60B3D HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334 | |
TA49171
Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. TA49171 IGBT JUNCTION TEMPERATURE CALCULATION | |
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Contextual Info: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of |
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HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S 108ns | |
G30N60A4
Abstract: hgtp30n60a4
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HGTG30N60A4 HGTG30N60A4 TA49343. G30N60A4 hgtp30n60a4 | |
g30n60Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at |
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HGTG30N60B3 HGTG30N60B3 TA49170. O-247 g30n60 | |
12n60cContextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a |
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HGTP12N60C3D, HGT1S12N60C3DS 150oC. TA49123. TA49188. 150oC 210ns 12n60c | |
J314
Abstract: DC MOTOR SPEED CONTROL USING IGBT IC A 3120 3 phase inverters circuit diagram igbt 6 pin smps power control ic A 3150 8 dip smps ic a J314 igbt ac motor speed control CIRCUIT DIAGRAM UPS
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HCPL-J314 HCPL-J314 5989-2942EN AV02-0155EN J314 DC MOTOR SPEED CONTROL USING IGBT IC A 3120 3 phase inverters circuit diagram igbt 6 pin smps power control ic A 3150 8 dip smps ic a J314 igbt ac motor speed control CIRCUIT DIAGRAM UPS | |
20N60A4 equivalentContextual Info: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high |
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HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent | |
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G30N60A4
Abstract: HGTG30N60A4
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HGTG30N60A4 HGTG30N60A4 150oC. 100kHz 200kHz 125oC G30N60A4 | |
OPTO ISOLATOR
Abstract: photovoltaic MOSFET driver opto-isolated control PVI5033R PVI5033RS PVI5033RS-T
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PD10048A PVI5033R PVI5033R 5M-1982 OPTO ISOLATOR photovoltaic MOSFET driver opto-isolated control PVI5033RS PVI5033RS-T | |
HGTG20N60A4DContextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a |
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HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. | |
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Contextual Info: HGTG30N60B3 Data Sheet November 2004 60A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar |
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HGTG30N60B3 HGTG30N60B3 150oC. 150oC | |
G40N60
Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
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HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b | |
g30n60b3
Abstract: HGTG30N60B3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60
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HGTG30N60B3 HGTG30N60B3 150oC. 150oC g30n60b3 GE 443 HGTG30N60B3D LD26 TA49170 G30N60 | |
MC68HC908mr
Abstract: freescale superflash
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MC68HC908MR32 MC68HC908MR16 M68HC08 MC68HC908MR32 MC68HC908MR16 MC68HC908mr freescale superflash | |
HGTG40N60B3 equivalent
Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
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HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6 | |
40N60A4
Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
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HGTG40N60A4 HGTG40N60A4 150oC. 100kHz 200kHz 40N60A4 HGT1Y40N60A4D LD26 TA49347 | |
G40N60B3Contextual Info: HGTG40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar |
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HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3 | |