DATA SHEET OF IGBT Search Results

HGT1S20N60C3S9A

Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

V30016

Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60b3d

Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

TA49171

Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

G30N60A4

Abstract: hgtp30n60a4
Contextual Info: HGTG30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high

g30n60

Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at

12n60c

Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

OPTO ISOLATOR

Abstract: photovoltaic MOSFET driver opto-isolated control PVI5033R PVI5033RS PVI5033RS-T
Contextual Info: Data Sheet No. PD10048A Series PVI5033R Photovoltaic Isolator Solid-State Opto-Isolated MOSFET Gate Driver Dual-Channel, 5V, 5µA General Description The PVI5033R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a

HGTG20N60A4D

Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

40N60A4

Abstract: HGTG40N60A4 HGT1Y40N60A4D LD26 TA49347
Contextual Info: HGTG40N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBT Features The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a

G7N60A4

Abstract: G7N60 g7n60a TA49331 HGT1S7N60A4S9A HGTG7N60A4 HGTP7N60A4 LD26
Contextual Info: HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

1n120cn

Abstract: GEM X 365 1N120C TB334 HGTD1N120CNS HGTD1N120CNS9A HGTP1N120CN TA49317
Contextual Info: HGTD1N120CNS, HGTP1N120CN Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120CNS, and the HGTP1N120CN are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

zener 7.5 spice model

Abstract: HGT1S5N120BNS HGTP5N120BN LD26 RHRD6120 TA49308 TB334 IC-2521 5n120bn
Contextual Info: HGTP5N120BN, HGT1S5N120BNS Data Sheet December 2001 21A, 1200V, NPT Series N-Channel IGBTs Features The HGTP5N120BN and the HGT1S5N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and

Contextual Info: HGTG30N120CN / HGTG5A30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN and HGT5A30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar

Contextual Info: HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a

HGT1S3N60B3S

Abstract: HGTD3N60B3S HGTD3N60B3S9A HGTP3N60B3 RHRD460
Contextual Info: HGTD3N60B3S, HGT1S3N60B3S, HGTP3N60B3 Data Sheet January 2000 7A, 600V, UFS Series N-Channel IGBTs Features The HGTD3N60B3S, HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

7N60A4

Abstract: HGTG7N60A4 HGTP7N60A4 TA49331 HGT1S7N60A4S HGTD7N60A4S HGTD7N60A4S9A
Contextual Info: HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4, HGTP7N60A4 Data Sheet June 2000 File Number 600V, SMPS Series N-Channel IGBT Features The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and

12n60a4d

Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

G7N60B3

Abstract: G7N60 G7N60B HGTD7N60B3S HGTD7N60B3S9A HGTP7N60B3 HGT1S7N60B3S
Contextual Info: HGTD7N60B3S, HGT1S7N60B3S, HGTP7N60B3 Data Sheet January 2000 14A, 600V, UFS Series N-Channel IGBTs Features The HGTD7N60B3S, HGT1S7N60B3S and HGTP7N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These

12n60a4d

Abstract: IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS HGT1S12N60A4DS9A
Contextual Info: HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and

p12n60c3

Abstract: TA49123 transistor equivalents for p12n60c3 p12n60 S12N60C3 HGTP12N60C3 RHRP1560 HGT1S12N60C3S HGT1S12N60C3S9A
Contextual Info: HGTP12N60C3, HGT1S12N60C3S Data Sheet January 2000 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have

HCPL-0314

Abstract: smps circuit diagram a 3140 3150 optocoupler HCPL-3140-560E IGBT with V-I characteristics ca 3140 ic A 3150 optocoupler HCPL-3140 DC MOTOR SPEED CONTROL USING IGBT
Contextual Info: HCPL-3140, HCPL-0314 0.4 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Description The HCPL-3140/HCPL-0314 family of devices consists of a GaAsP LED optically coupled to an integrated circuit with a power output stage. These optocouplers are ideally suited for driving power IGBTs

HGTG30N120CN

Abstract: RHRP30120 G30N120CN LD26 igbt 1200v 150a
Contextual Info: HGTG30N120CN Data Sheet January 2000 75A, 1200V, NPT Series N-Channel IGBT Features The HGTG30N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device