DATA SHEET OF IGBT Search Results

HT12E HT12D

Abstract: 1NA114AP Burr Brown part marking Allen-Bradley micrologix 1000 RS 434-071 PCB Board 1na111ap allen-bradley silicone dashpot fluid hengstler, 890, 1 702 019 1NA131AP ICM72171
Contextual Info: Issued September 2001 302-1000 Data Packs A-K Data Sheet RS data sheet/semiconductor manufacturers data sheet index Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

HT12E HT12D

Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
Contextual Info: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.

Contextual Info: Table of Contents Power MOSFET Numeric Data Sheet Listing and Selector Guide Chapter 1: Power MOSFETs Page Numeric Data Sheet Listing . . . . . . . . . . . . . . . . . . . . . . . . . 4 Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Switching Controllers

Contextual Info: Table of Contents Page Numeric Data Sheet Listing INTERFACES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73 Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73

D-12

Abstract: IRGBC20S
Contextual Info: Previous Datasheet Index Next Data Sheet IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.

OF IGBT

Abstract: FZ600R65KF1 rthjc IGBT eupec module igbt
Contextual Info: Application Note Date: 12.05.2004 AN-Number: AN-2004-01 Page 1 Department: SM TM New RthCH data sheet values With the release of a new data sheet software for IGBT modules in 2003 the ‘thermal resistance case to heat-sink per module’ is supplemented by the therein included values for the ‘thermal

g20n60

Abstract: HGT1S20N60C3S9A HGT1S20N60C3S G20N60C3 HGTG20N60C3 HGTP20N60C3 TA49178 TB334
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

G12N60b3

Abstract: g12n60 TA49171 HGT1S12N60B3S HGT1S12N60B3S9A HGTG12N60B3 HGTP12N60B3 HGTP12N60B3D LD26 110A
Contextual Info: HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

g20n60

Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

HGT1S20N60C3S9A

Abstract: G20N60C3 HGTG20N60C3 equivalent HGT1S20N60C3S TA49178 HGTG20N60C3 HGTP20N60C3 RHRP3060 TB334 igbt g20n60c3
Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

PVI5013R

Abstract: PVI5013RS PVI5013RS-T
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. 1.1041 Series PVI5013R Solid-State Opto-Isolated MOSFET Gate Driver Dual-Channel 5V, 1.0µA PHOTOVOLTAIC ISOLATOR General Description PVI5013R Features The PVI5013R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly

SMCS6G25-60-1

Abstract: DC SERVO MOTOR closed loop pwm speed control SMCS6G25-60 SMC6G25-60 sensorless bdc motor speed control 210C 10Mohm resistor bdc motor
Contextual Info: SENSITRON SEMICONDUCTOR SMCS6G25-60 SMCS6G25-60-1 TECHNICAL DATA DATA SHEET 5006, REV.ENG 1.1 Preliminary Data Sheet SENSORLESS BRUSHLESS DC MOTOR CONTROLLER MODULE IN A POWER FLATPACK 25A, 600V FEATURES: • Two Quadrant Mode of Operation. • Fully integrated 3-Phase Sensorless Brushless DC Motor Control Subsystem includes power stage,

calculation of IGBT snubber

Abstract: rc snubber calculation IEC60747-1 IEC60747-9 D-68623 IEC60747-2 aegtelefunken
Contextual Info: Technical Information Choosing the Appropriate Component from Data Sheet Ratings and Characteristics Choosing the Appropriate Component from Data Sheet Ratings and Characteristics This application note is intended to show how to choose the appropriate rating of a power semiconductor component for a

V30016

Contextual Info: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: Data Sheet No. 10048 Series PVI5033R PHOTOVOLTAIC ISOLATOR General Description The PVI5033R Photovoltaic Isolator is a dualchannel, opto-isolated driver capable of directly driving gates of power MOSFETs or IGBTs. It utilizes a monolithic integrated circuit photovoltaic

TA49372

Abstract: 20N60A4 equivalent
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60b3d

Abstract: HGTP12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

TA49171

Abstract: IGBT JUNCTION TEMPERATURE CALCULATION
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

Contextual Info: ïfA R m S HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3, HGT1S20N60C3S Data Sheet May 1999 45A, 600V, UFS Series N-Channel IGBT This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60b3d

Abstract: HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of

12n60c3d

Abstract: TA49182 TA4918 HGT1S12N60C3DS HGT1S12N60C3DS9A HGTP12N60C3D TA49123 TA49188
Contextual Info: HGTP12N60C3D, HGT1S12N60C3DS Data Sheet January 2000 File Number 4261.1 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar

G30N60A4

Abstract: hgtp30n60a4
Contextual Info: HGTG30N60A4 Data Sheet November 2013 600 V SMPS IGBT Features The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high

g30n60

Contextual Info: HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT Features The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at