D940 Search Results

X7541

Contextual Info: ykiyjxiyki Ì9-D940. Rev ì. 7/95 C M O S 12 B it M u ltip ly in g D /A C o n v e rte r T he MX7541 is a high perform ance CM O S m ultiplyin g 12 bit d ig ita l-to -a n a lo g co n ve rte r DAC . Low pow er operation and 12-bit linearity (0.012%) make it suitable

7493 PIN function MSB LSB

Abstract: AD7541 MAX400 MX7541 MX7541AD MX7541AQ MX7541BQ MX7541JCWN MX7541JN MX7541KN
Contextual Info: ykiyjxiyki Ì9-D940. Rev ì. 7/95 C M O S 12 B it M u ltip ly in g D /A C o n v e rte r T he MX7541 is a high perform ance CM O S m ultiplyin g 12 bit d ig ita l-to -a n a lo g co n ve rte r DAC . Low pow er operation and 12-bit linearity (0.012%) make it suitable

Brown Boveri induction Motor

Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Contextual Info: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

Contextual Info: H iPerFET P o w er M O S FE T IX F H 2 4 N 5 0 S VDSS I D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr a 500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . test Conditions v’ d s s

R 7014A

Abstract: atmel 806 AT49BV642D-70TU AT572D940 HCPL-0700-000E optoisolator 2721 s3 via K4S561632H 182-009-113r531 DM9161
Contextual Info: D940-EB DIOPSIS 940HF Evaluation Board . User Guide 7014A–DSP–03/09 1-2 7014A–DSP–03/09 DIOPSIS 940HF Evaluation Board User Guide

SB200375WE2.5

Contextual Info: 107-68528 Packaging Specification 25Apr11 Rev J US LABEL SERIES 1. PURPOSE 目的 Define the packaging specifiction and packaging method of US LABEL SERIES. 订定 US LABEL SERIES 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围 / PACKAGING QUANTITY 包装数量

RTL8211E

Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

npce781la0dx

Abstract: NPCE781 npce781la TI_BQ24721C_QFN_32P NPCE78 BAT54C3 RTL8103 realtek ALC 3232 SLG8SP510T C4161
Contextual Info: Perugia 10M MP Build A03 2009.05.05 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Perugia10M SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A2250501 1 OF x01 63

smr 40000c circuit

Abstract: SMR 40000c VID 200-12 S4 STRD 1806 AT572D940 CHANNEL22 16X64 Dot Matrix LCD 2x16, 16 pin up, 16 pin down Module Date Code AT572D940HF ptz decoder
Contextual Info: Features • DIOPSIS Dual Core System Integrating an ARM926EJ-S ARM® Thumb® Processor • • • • Core and a MagicV of VLIW Magic DSP™ is optimized for Audio, Communication and Beam-forming Applications High Performance MagicV VLIW DSP – 1 GFLOPS - 1.6 Gops at 100 MHz

TTK SG 2368

Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Contextual Info: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A

50N60A

Abstract: IXGH50N60AS IXGH50N60A
Contextual Info: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600

10N60A

Abstract: IGBT 10N60 10N6Q
Contextual Info: nixYS ^ IXGH10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s

Contextual Info: W ho 1 H E W L E T T WL'HM P A C K A R D High-Performance IR Em itter and PIN Photodiode in Subm iniature SMT Package Preliminary Technical Data HSDL-44XX Series HSDL-54XX Series Features Description Arrays • Subminiature Flat Top and Dome Package Flat Top Package

2a92

Abstract: 3B9335 3C9343 AT29C010 32PDIP
Contextual Info: PAGE 1 OF 8 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-29C010 PEROM RELIABILITY DATA - 125°C DYNAMIC OPERATING LIFE TEST - 200°C RETENTION BAKE - CYCLE TEST - 125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) - 150°C RETENTION BAKE (PLASTIC) - 85°C/85% RELATIVE HUMIDITY OPERATING LIFE TEST

smd diode JC 0p

Abstract: DIODE SMD GEM IXGH24N60AU1S
Contextual Info: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600

IFR 640

Abstract: S41c 24N60A IXGA24N60A
Contextual Info: n i x Y S HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = w CES ^C25 v v CE sat tfi 600 V 48 A 2.7 V 275 ns Prelim inary data Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous

BERULUB FR 16 B

Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
Contextual Info: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power

CT-920

Abstract: AWG34
Contextual Info: B uyduit Tool Chart for LAA, LAB Lugs and SA Splices Tool Chart for Compression-Type Aluminum Lugs and Splices For in sta lla tio n on C opper and A lum inu m Cables Using RlNDUIT Tools and Those of O ther M anufacturers Tool Chart for Compression Connectors

d918

Abstract: D938 TND903 TND907
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy automatic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

AGU1

Abstract: ISA S20 IEEE754 0x3F80000000
Contextual Info: Feature Summary • • • • • • • • • • • • • • • 1.0 GFLOPS - 1.5 GOPS at 100 MHz AHB Master Port, integrated DMA Engine and AHB Slave Port VLIW Architecture with five Independent Execution Units Up to 10 Arithmetic Operations per Cycle 4 Multiply, 2 Add/Subtract, 1 Add, 1 Subtract

Contextual Info: s HiPerFET Power MOSFET IXFH50N20S VDSS ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr tr r = 200 V = 50 A = 45 mfì < 200 ns Preliminary data Sym bol Maximum R atings Test C onditions v DSS Tj = 25°C to 175°C

Contextual Info: HiPerFET Power MOSFET IXFH24N50S VDSS ^D25 = 500 V = 24 A RDS on = 0.23 Cl < 250 ns tr r Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS Td = 25°C to 175°C