D94010DE Search Results

Contextual Info: H iPerFET P o w er M O S FE T IX F H 2 4 N 5 0 S VDSS I D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr a 500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . test Conditions v’ d s s

Contextual Info: s HiPerFET Power MOSFET IXFH50N20S VDSS ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr tr r = 200 V = 50 A = 45 mfì < 200 ns Preliminary data Sym bol Maximum R atings Test C onditions v DSS Tj = 25°C to 175°C

Contextual Info: HiPerFET Power MOSFET IXFH24N50S VDSS ^D25 = 500 V = 24 A RDS on = 0.23 Cl < 250 ns tr r Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS Td = 25°C to 175°C

24N50S

Abstract: smd JH IXFH24N50S D2528
Contextual Info: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC

IXFH40N30

Abstract: smd diode 819
Contextual Info: giX Y S H IP e rF E T P o w e r IX F H 4 0 N 3 0 S M O S F E T v ^D25 P DS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr — 300 V — 40 A ¥ DSS V — < 85 mQ 200 ns Prelim inary data Symbol Maximum Ratings Test Conditions