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    TE Connectivity

    TE Connectivity 1-2199300-2

    IC & Component Sockets 32P DIP SKT 600 CL OTC
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    TTI 1-2199300-2 Tube 1,500 1,500
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    32PDIP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    T4 1060

    Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
    Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


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    sst29ee512sst29ee512512kbs71060s71060-09-000+3t4 1060sst29ee512-70-4i-nhe32-pin PDF

    27C4000-15

    Abstract: 27C40001 IN3064 MX27C4000 MX27C4000QC-10 27C4000-12 MX27C4000MC-90 27c4000-10 27C4000
    Contextual Info: MX27C4000 4M-BIT [512K x8] CMOS EPROM FEATURES • • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: 512K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time: 90/100/120/150 ns Totally static operation


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    mx27c4000100uafea/1997mar/01/2000+12aug/20/2001aug/13/2002nov/19/2002jun/19/200327c4000-1527c40001in3064mx27c4000qc-1027c4000-12mx27c4000mc-9027c4000-1027c4000 PDF

    SST39SF010A

    Abstract: SST39SF020A SST39SF040 A17-A3
    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations


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    sst39sf010asst39sf020asst39sf040s71147-05-000+1a17-a3 PDF

    H 1061

    Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
    Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


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    sst29ee010sst29ve010sst29eeve0101mb+4s71061s71061-11-000h 1061sst29ee010-90-4c-nh PDF

    SST29EE010

    Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
    Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


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    sst29ee010sst29ve010sst29eeve0101mb+3s71061sst29ee010-70-4c-phetransistor 1061 PDF

    heds 7500

    Abstract: Quadrature Decoder Suits Rotary Encoders incremental optical encoder 5V ttl quadrature agilent optical encoder HTCL 2022 agilent encoder sensor heds INCREMENTAL ENCODER 2048 Absolute OPTICAL ENCODER ic lm 7500 incremental optical rotary encoder
    Contextual Info: Motion Sensing and Control Products Selection Guide 2 5 Introduction Product Overview 6 19 28 30 Incremental Optical Encoders • Transmissive Module • Transmissive Housed • Reflective Module • Reflective Housed 33 34 Absolute Optical Encoders • Single-Turn Module


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    heds 7500quadrature decoder suits rotary encodersincremental optical encoder 5v ttl quadratureagilent optical encoder+6htcl 2022agilent encoder sensor hedsincremental encoder 2048absolute optical encoderic lm 7500incremental optical rotary encoder PDF

    SST28SF040A

    Abstract: SST28VF040A
    Contextual Info: 4 Mbit 512K x8 SuperFlash EEPROM SST28SF040A / SST28VF040A Data Sheet SST28SF / VF040A4Mb (x8) Byte-Program, Small Erase Sector flash memories FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST28SF040A – 2.7-3.6V for SST28VF040A


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    sst28sf040asst28vf040asst28sfvf040a4mb+1s71077-05-000 PDF

    CS18LV

    Abstract: 8X13 CS18LV10245 CS18LV10245CC CS18LV10245CI CS18LV10245DC CS18LV10245DI CS18LV10245EC CS18LV10245EI CS18LV10245LC
    Contextual Info: High Speed Super Low Power SRAM CS18LV10245 128K-Word By 8 Bit „ DESCRIPTION The CS18LV10245 is a high performance, high speed and super low power CMOS Static Random Access Memory organized as 131,072 words by 8bits and operates from a wide range of 4.5 to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high


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    cs18lv10245128k-word55/70ns32-pin+9cs18lv8x13cs18lv10245cccs18lv10245cics18lv10245dccs18lv10245dics18lv10245eccs18lv10245eics18lv10245lc PDF

    SST39SF010A

    Abstract: SST39SF020A SST39SF040
    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories EOL Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations


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    sst39sf010asst39sf020asst39sf04032-pdip-ph-3+232-pins71147 PDF

    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 Data Sheet The SST39SF010A / SST39SF020A / SST39SF040 are CMOS Multi-Purpose Flash (MPF) devices manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate


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    sst39sf010asst39sf020asst39sf040ds25022b PDF

    Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit x8 Many-Time Programmable Flash SST27SF512 / SST27SF010 / SST27SF020 SST27SF512 / 010 / 0205.0V-Read 512Kb / 1Mb / 2Mb (x8) MTP flash memories Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 • 4.5-5.5V Read Operation


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    sst27sf512sst27sf010sst27sf020512kb+1s71152 PDF

    Plastic 32-pin 300 mil SOIC

    Abstract: 32PDIP STK14C88-3 STK14C88-3NF35 STK14C88-3NF35I STK14C88-3NF35ITR STK14C88-3WF35
    Contextual Info: STK14C88-3 256 Kbit 32K x 8 AutoStore nvSRAM Features Functional Description • 35 ns and 45 ns access times ■ Automatic nonvolatile STORE on power loss ■ Nonvolatile STORE under Hardware or Software control ■ Automatic RECALL to SRAM on power up


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    stk14c88-3plastic 32-pin 300 mil soic32pdipstk14c88-3nf35+3stk14c88-3nf35istk14c88-3nf35itrstk14c88-3wf35 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    SST29LE512

    Abstract: t103 tida1 SST29EE512 SST29VE512
    Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 / SST29LE512 / SST29VE512 SST29EE / LE / VE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 – 3.0-3.6V for SST29LE512


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    sst29ee512sst29le512sst29ve512sst29ee+2ve512512kbt103 tida1 PDF

    ZIGBEE interface with AVR ATmega16

    Abstract: Stepper motor control using AT89S52 ic stk 432 090 ATAVRDRAGON ELECTRONIC NOTICE BOARD USING AT89S52 circuit Microcontroller AT89s52 connections with lcd avr lcd 2x16 cd photo detector atr0834t atr0834
    Contextual Info: ATMEL PRODUCT GUIDE January 2008 Atmel Corporation ● 2325 Orchard Parkway ● San Jose, CA 95131 TEL: 408 441-0311 ● FAX: (408) 487-2600 Web Site: http://www.atmel.com ATMEL PRODUCT GUIDE January 2008 ATMEL’S PRODUCTS Atmel Corporation is a global leader in the design and manufacture of innovative integrated circuits, focusing on microcontrollers, ASICs,


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    zigbee interface with avr atmega16stepper motor control using at89s52ic stk 432 090atavrdragon+6electronic notice board using at89s52 circuitmicrocontroller at89s52 connections with lcdavr lcd 2x16cd photo detectoratr0834tatr0834 PDF

    SST37VF010

    Abstract: SST37VF020 SST37VF040 SST37VF512 f02a3 90-3C-WH
    Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Many-Time Programmable Flash SST37VF512 / SST37VF010 / SST37VF020 / SST37VF040 SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8


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    sst37vf512sst37vf010sst37vf020sst37vf040+6512kbsst37vfmo-01532-pdip-ph-3f02a390-3c-wh PDF

    SST39SF040-70-4C-NH

    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Preliminary Specification FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations


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    sst39sf010asst39sf020asst39sf04014max/min+432-pdip-ph-332-pins71147-03-000sst39sf040-70-4c-nh PDF

    SST29EE010

    Abstract: SST29LE010 SST29VE010
    Contextual Info: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29LE010 / SST29VE010 SST29EE / LE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 3.0-3.6V for SST29LE010


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    sst29ee010sst29le010sst29ve010sst29ee+3ve0101mb32-pdip-ph-332-pin PDF

    GLS29EE512

    Abstract: GLS29EE512-70-4I-NH GLS29EE512-70-4I-NHE GLS29EE512-70-4C-NH GLS29EE512-70-4C-EHE 32-PIN GLS29EE512-70-4C-NHE GLS29EE512-70
    Contextual Info: 512 Kbit 64K x8 Page-Write EEPROM GLS29EE512 GLS29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for GLS29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


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    gls29ee512gls29ee512512kbs71060-10-000gls29ee512-70-4i-nh+6gls29ee512-70-4i-nhegls29ee512-70-4c-nhgls29ee512-70-4c-ehe32-pingls29ee512-70-4c-nhegls29ee512-70 PDF

    S71062

    Abstract: SST29EE020-120-4C-NH SST29EE020 SST29LE020 SST29VE020
    Contextual Info: 2 Mbit 256K x8 Page-Write EEPROM SST29EE020 / SST29LE020 / SST29VE020 SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories EOL Product Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE020 – 3.0-3.6V for SST29LE020


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    sst29ee020sst29le020sst29ve020sst29ee+3ve0202mbs71062sst29ee020-120-4c-nh PDF

    SST39WF160x

    Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
    Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb


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    am29fsst39sfs29als29gl+13sst39vfsst38vfs29assst39wfsst39wf160xsst25vf016btsop i 12mmx20mm48-wfbgasst38vf640xtsop 28 spi memory package flashflash cross sst39vf040wfbga-4848tsop PDF

    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Many-Time Programmable Flash SST37VF010 / SST37VF020 / SST37VF040 SST37VF512 / 010 / 020 / 0402.7V-Read 512Kb / 1Mb / 2Mb / 4Mb (x8) MTP flash memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • 2.7-3.6V Read Operation


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    sst37vf010sst37vf020sst37vf040sst37vf512+3512kbs71151s71151-09-000 PDF

    SST39SF040-70-4I-NHE

    Abstract: SST39SF010A SST39SF020A SST39SF040
    Contextual Info: 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39SF010A / SST39SF020A / SST39SF040 SST39SF010A / 020A / 0405.0V 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet FEATURES: • Organized as 128K x8 / 256K x8 / 512K x8 • Single 4.5-5.5V Read and Write Operations


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    sst39sf010asst39sf020asst39sf040psn-d0pb0001+2s71147-07-000sst39sf040-70-4i-nhe PDF

    SST28SF040A

    Abstract: SST28VF040A
    Contextual Info: 4 Mbit 512K x8 SuperFlash EEPROM SST28SF040A / SST28VF040A EOL Data Sheet SST28SF / VF040A4Mb (x8) Byte-Program, Small Erase Sector flash memories FEATURES: TE SO PRODUCT DESCRIPTION • Fast Read Access Time – 4.5-5.5V-only operation: 90 and 120 ns – 2.7-3.6V operation: 150 and 200 ns


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    sst28sf040asst28vf040asst28sfvf040a4mb+332-lead32-pin32-pdip-ph-3 PDF